Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm t...Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively.展开更多
This paper reports that the polycrystalline Si0.965Mn0.035：B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two f...This paper reports that the polycrystalline Si0.965Mn0.035：B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two ferromagnetic phases.The low temperature ferromagnetic phase with Curie temperature （Tc） of about 50~K is due to the Mn4Si7 phase in the films, while the high temperature one （Tc～ 250~K） is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035：B films suggests that the hole carriers play an important role in Si：Mn diluted magnetic semiconductors.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.50802118,60906005)the Natural Science Foundation of Guangdong Province,China(No.9451027501002848)
文摘Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively.
基金supported by the National Key Program for Fundamental Research Development Project of China (973 Project)
文摘This paper reports that the polycrystalline Si0.965Mn0.035：B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two ferromagnetic phases.The low temperature ferromagnetic phase with Curie temperature （Tc） of about 50~K is due to the Mn4Si7 phase in the films, while the high temperature one （Tc～ 250~K） is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035：B films suggests that the hole carriers play an important role in Si：Mn diluted magnetic semiconductors.
