Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.

Electron Field Emission from Patterned Porous Silicon Film

Patterned porous silicon （PS） films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy （SEM）,X-ray diffraction（XRD）,and atomic force microscopy （AFM）.The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.

Silicon Field Emission Arrays Coated with CN_x Thin Films

Arrays of silicon micro\|tips were made by etching the p\|type (1 0 0) silicon wafers which had SiO 2 masks with alkaline solution. The density of the micro\|tips is 2×10 4 cm -2 . The Scanning Electron Microscope (SEM) photos showed that the tips in these arrays are uniform and orderly. The CN x thin film, with the thickness of 1.27μm was deposited on the silicon micro\|tip arrays by using the middle frequency magnetron sputtering technology. The SEM photos showed that the films on the tips are smoothly without particles. Keeping the sharpness of the tips will benefit the properties of field emission. The X\|ray photoelectron spectrum (XPS) showed that carbon, nitrogen and oxygen are the three major elements in the surfaces of the films. The percents of them are C: 69.5 %, N: 12.6 % and O: 17.9 %. The silicon arrays coated with CN x thin films had shown a good field emission characterization. The emission current intensity reached 3.2 mA/cm 2 at 32.8 V/μm, so it can be put into use. The result showed that the silicon arrays coated with CN x thin films are likely to be good field emission cathode. The preparation and the characterization of the samples were discussed in detail.

Effect of metal nanoparticle doping concentration on surface morphology and field emission properties of nano-diamond films

Nano-diamond particles are co-deposited on Ti substrates with metal(Ti/Ni) nanoparticles(NPs) by the electrophoretic deposition(EPD) method combined with a furnace annealing at 800℃ under N_(2) atmosphere. Modifications of structural and electron field emission(EFE) properties of the metal-doped films are investigated with different metal NPs concentrations. Our results show that the surface characteristics and EFE performances of the samples are first enhanced and then reduced with metal NPs concentration increasing. Both the Ti-doped and Ni-doped nano-diamond composite films exhibit optimal EFE and microstructural performances when the doping quantity is 5 mg. Remarkably enhanced EFE properties with a low turn-on field of 1.38 V/μm and a high current density of 1.32 mA/cm^(2) at an applied field of 2.94 V/μm are achieved for Ni-doped nano-diamond films, and are superior to those for Ti-doped ones. The enhancement of the EFE properties for the Ti-doped films results from the formation of the TiC-network after annealing. However, the doping of electron-rich Ni NPs and formation of high conductive graphitic phase are considered to be the factor, which results in marvelous EFE properties for these Ni-doped nano-diamond films.

Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

In this paper,we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition.The diamond films consisting of micro-grains(nano-grains) were realized with low(high) boron source flow rate during the growth processes.The transition of micro-grains to nano-grains is speculated to be strongly(weekly) related with the boron(nitrogen) flow rate.The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate.The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples,which are related to the combined phase composition,boron doping level and texture structure.There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

Application of nano-crystalline silicon film in the fabrication of field-emission pressure sensor

A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.

A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

The turn-on speed of electrostatic discharge （ESD） protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device （DTSCR） can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping （VLBD） structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure （VLBD_DTSCR） is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p--n-p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current.

Effects of K ions doping on the structure, morphology and optical properties of Cu_2FeSnS_4 thin films prepared by blade-coating process

Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to fiLrther improve the surface morphology and the optical properties of related films. X-ray diffraction （XRD）, Raman spectroscopy and field emission scanning electron microscopy （FESEM） were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/（Fe＋Sn） and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV.

First-principles study of the effects of Si doping on geometric and electronic structure of closed carbon nanotube

The effects of Si doping on geometric and elec-tronic structure of closed carbon nanotube (CNT) are stud-ied by, a first-principles method, DMol. It is found that the local density of states at the Fermi level (EF) increases due to the Si-doping and the non-occupied states above the EF go down toward the lower energy range under an external elec-tronic field. In addition, due to the doping of Si, a sub-tip on the CNT cap is formed, which consisted of the Si atom and its neighbor C atoms. From these results it is concluded that Si-doping is beneficial to the CNT field emission properties.

Cr^(3+)掺杂F^(-)修饰BaScO_(2)F钙钛矿结构宽带近红外荧光粉

Cr^(3+)掺杂的近红外荧光材料,因具有高量子效率、可调的宽带发射及在蓝色光谱范围内的强吸收特性而备受关注。通过晶体场工程,可以调节Cr^(3+)掺杂的近红外荧光材料的发射范围,但常规的阳离子取代对发射范围的调节通常限制在近红外Ⅰ区(波长<1000 nm)。在生物医学成像领域,由于生物组织的吸收、散射和自发荧光较低,在近红外Ⅱ区,能够实现更高的穿透深度及无创或微创的深部组织成像。采用高温固相法,以Ba_(2)Sc_(2)O_(5)类钙钛矿型氧化物为基体,合成了一系列基于F^(-)修饰的近红外荧光粉BaSc_(1-x)O_(2)F:xCr^(3+)(x=0.001—0.01)。通过XRD图谱和容差因子计算,证明了合成的样品具有立方钙钛矿结构。另外,通过漫反射光谱(DRS)和X射线光电子能谱(XPS)等表征手段,确认了Cr离子的价态为Cr^(3+)。利用电子顺磁共振(EPR)对Cr^(3+)周围的晶体环境进行检测分析发现,样品在波长700—1400 nm范围内表现出近红外宽带发射,发射中心约在1040 nm处,半峰宽(FWHM)高达250 nm。表明,Cr^(3+)的发射有效覆盖了近红外Ⅱ区。同时,也证明了通过阴离子掺杂调节晶体场强度是可行的。由于PLE光谱和PL光谱在波长700—850 nm范围内存在重叠,随着Cr^(3+)掺杂浓度的增加,发射部分被重吸收,导致发射中心出现明显的红移现象。由于BaSc_(1-x)O_(2)F:xCr^(3+)近红外荧光粉的吸收峰与蓝光LED芯片能够匹配,表明其具有商业化潜力。本研究为生物医学成像领域的近红外Ⅱ区荧光粉转换LED器件提供了优异的宽带近红外光源材料。

金刚石薄膜场致发射的研究

给出了以硅片和钼片作基底，在不同掺杂状态下的几种金刚石薄膜的发射特性和两种金刚石薄膜的扫描电子显微镜照片及喇曼光谱．测试结果表明，掺杂后的金刚石薄膜的发射电流密度可增大一个数量级．

掺氮碳纳米管阵列的制备及其场发射特性

使用结构简单的单温炉设备,以二茂铁为碳源与催化剂,三聚氰胺为氮源在硅基底制备出了碳纳米管阵列。所得的碳纳米管为多壁结构,单根碳纳米管的平均直径为50nm,长度为15μm,有着很好的定向性。透射电子显微镜(TEM)和X射线光电子谱(XPS)分析表明所得的碳纳米管是氮掺杂的。利用场发射显微镜研究了掺氮碳纳米管阵列的平面场发射特性,相应的开启场强为1.60Vμm,场发射图像表明了其有较高的场发射点密度。

硅纳米线的电学特性

总结了硅纳米线在电学特性方面的研究进展,重点分析了本征及掺杂硅纳米线的载流子浓度与迁移率、场发射及电子输运特性。研究表明通过对硅纳米线进行掺杂可提高载流子浓度及迁移率、场发射和电子输运性能,随硅纳米线直径的减小其电学性能增强。因此,硅纳米线在场效应晶体管及存储元件等纳米器件方面具有极大的应用前景。

B/N/Si掺杂的(9,0)型碳纳米管电子结构第一性原理研究

基于密度泛函理论(DFT)的DMol3软件包,研究了(9,0)型碳纳米管(CNT)顶端掺杂B/N/Si等元素对其几何结构及电子结构的影响。结果表明,掺杂原子对非掺杂区几何结构影响微弱;加电场后,各种掺杂CNT顶端局域态密度(LDOS)峰位向价带移动;B/N/Si掺杂不仅引起CNT费米能级(Ef)处LDOS增大,而且最低空轨道与最高占有轨道的差值(LUMO-HOMO)降低。由此可预期CNT顶端掺B/N/Si均有利于场致电子发射,且改善幅度依次增强。

Al掺杂四针状ZnO纳米结构的制备及其光致发光和场发射特性

采用热蒸发法成功制备了Al掺杂四针状ZnO纳米结构(T-AZO),利用扫描电子显微镜、X射线衍射仪、荧光光谱仪和场发射测试系统分别研究了不同Al摩尔分数对T-AZO纳米结构表面形貌、微结构、光致发光谱和场发射特性的影响。实验结果表明:T-AZO纳米结构呈现六角纤锌矿结构,Al掺杂对四针状ZnO纳米结构的形貌产生明显影响并且使紫外发射峰产生蓝移。实验中,当Al掺杂摩尔分数为3%时,场发射性能最好,其开启场强为1.33 V/μm,场增强因子为8 420。

La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算

采用化学气相沉积法和气相掺杂法,分别制备了La或N掺杂的Si C纳米线.利用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)、高分辨透射电子显微镜(HRTEM)、X射线能量色散谱(EDS)分析和X射线衍射(XRD)等测试手段对两种产物的微观形貌、元素组成和物相结构进行了系统表征.以合成产物作为阴极,对其场发射性能进行测试,结果表明:Si C纳米线的开启电场值和阈值电场值由未掺杂的2.3、6.6 V*μm-1分别降低为1.2、5.2 V*μm-1(La掺杂)和0.9、0.4 V*μm-1(N掺杂).采用Material Studio软件中的Castep模块建立(3×3×2)晶格结构模型,对未掺杂、La或N掺杂Si C的能带结构和态密度进行计算,结果显示:La或N掺杂后,在费米能级附近产生了新的La 5d或N 2p掺杂能级,导致禁带宽度(带隙)变窄,使得价带电子更容易跨越禁带进入导带,从而改善Si C纳米线的场发射性能.

多孔硅衬底微波CVD金刚石薄膜的制备及其场电子发射

研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 .以多孔硅作为生长金刚石突起阵列的模板 ,生长出带多微尖的微晶金刚石晶粒 ,使场电子发射阈值下降 (<1V/ μm) ,发射电流增大 (>90 m A/ cm2 ) ,场发射性能稳定 ,并对这种场发射特性做出了理论解释 .

用化学方法制备硅场发射阵列

利用各向同性腐蚀液制备了硅微尖阵列。

场致发射硅尖阵列的研制

研究真空微电子器件场致发射硅尖阵列的制作工艺.利用HNA湿法腐蚀工艺制作场致发射硅尖阵列,比较带胶腐蚀与不带胶腐蚀的不同.采用氧化削尖技术对硅尖进行锐化处理.制作了50×60硅尖阵列,同时给出了硅尖阵列的I-V特性.利用HNA湿法腐蚀制备的硅尖结构与理论分析一致,锐化处理改善了硅尖阴极阵列的场致发射特性.

碳纳米管和镓掺杂碳纳米管场发射性能研究

采用催化热解方法分别制备出碳纳米管和镓掺杂碳纳米管,并利用丝网印刷工艺将其制备成纳米管薄膜．对此薄膜进行低场致电子发射测试表明,碳纳米管和镓掺杂纳米管开启电场分别为2．22和1．0V／μm,当外加电场为2．4V／μm,碳纳米管发射电流密度为400μA／cm2,镓掺杂纳米管发射电流密度为4000μA／cm2．可见镓掺杂碳纳米管的场发射性能优于同样条件下未掺杂时的碳纳米管．对镓掺杂纳米管场发射机理进行了探讨．