Design of MEMS C-Band Microstrip Antenna Array Based on High-Resistance Silicon for Intelligent Ammunition

In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle （UAV）, and weapons. A micro-electro-mechanical systems-based （MEMS-based） high-resistance silicon C-band microstrip antenna array has been designed for the intelligent ammunition. The center frequency is 4.5 GHz. A cavity has been designed in substrate to reduce the dielectric constant of silicon and high-resistance silicon has been used as the material of substrate to improve the gain of antenna. It is very easy to be manufactured by using MEMS technology because of the improved structure of the antenna. The results show that the gain of the antenna is 8 dB and voltage standing wave ratio （VSWR） is less than 2 by the analysis and simulation in high freauencv structure simulator （HFSS）.

Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide

We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.

Multibeam Antenna Based on Butler Matrix for 3G/LTE/5G/B5G Base Station Applications

With the rapid development of mobile communication technology and the explosion of data traffic,high capacity communication with high data transmission rate is urgently needed in densely populated areas.Since multibeam antennas are able to increase the communication capacity and support a high data transmission rate,they have attracted a lot of research interest and have been actively investigated for base station applications.In addition,since multi-beam antennas based on Butler matrix(MABBMs)have the advantages of high gain,easy design and low profile,they are suitable for base station applications.The purposes of this paper is to provide an overview of the existing MABBMs.The specifications,principles of operation,design method and implementation of MABBMs are presented.The challenge of MABBMs for 3G/LTE/5G/B5G base station applications is discussed in the end.

Squeeze-Strengthening Effect of Silicone Oil-based Magnetorheological Fluid

In order to study the squeeze-strengthening effect of silicone oil-based magnetorheological fluid （MRF）, theoretical basis of disc squeezing brake was presented and a squeezing braking characteristics test-bed for MRF was designed. Moreover, relevant experiments were carded out and the relationship between squeezing pressure and braking torque was proposed. Experiments results showed that the yield stress of MRF improved linearly with the increasing of external squeezing pressure and the braking torque increased three times when external squeezing pressure achieved 2 MPa.

Effects of precoating and calcination on microstructure of 3D silica fiber reinforced silicon nitride based composites

Three-dimensional silica fiber reinforced silicon nitride based composites were fabricated by preceramic polymer infiltration and pyrolysis method using perhydropolysilazane as a precursor. The effects of precoating and high temperature calcination on the microstructures of the composites were investigated by scanning electron microscopy. For the composite without a precoating, the fracture surface is plain, and the fiber/matrix interfaces become very unclear after calcination at 1 600 ℃ due to intense interfacial reactions. The composite with a precoating shows tough fracture surface with distinct fiber pull-outs, and the fiber/matrix interfaces are still clear after calcination at 1 600 ℃. It is the appropriate precoating process that contributes to the good interfacial microstructures for the composite.

A New Method for the Ultra-smooth Machining of the Silicon Based Materials

A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

A Boron-based Adhesion Aid for Efficient Bonding of Silicone Rubber and Epoxy Resin

We improved the adhesion between silicon based insulating materials and epoxy resin composites by adding the adhesion promoter cycloborosiloxane(BSi,cyclo-1,3,3,5,7,7-hexaphenyl-1,5-diboro-3,7-disiloxane).The experimental results show that the addition of BSi in the silicone rubber(SR)system significantly increases the tensile shear strength between BSi and epoxy resin(EP),reaching 309%of the original value.On this basis,the mechanism of BSi to enhance the adhesion effect was discussed.The electron deficient B in BSi attracted the electron rich N and O in EP to enhance the chemical interaction,combined with the interfacial migration behavior in the curing process,to improve the adhesion strength.This study provides the design and synthesis ideas of adhesive aids,and a reference for further exploring the interface mechanism of epoxy resin matrix composites.

A Method for Preparation of Ordered Porous Silicon Based on a 2D SiO_2 Template

A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.

A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview

This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.

Gradient-based optimization method for producing a contoured beam with single-fed reflector antenna

A gradient-based optimization method for producing a contoured beam by using a single-fed reflector antenna is presented. First, a quick and accurate pattern approximation formula based on physical optics(PO) is adopted to calculate the gradients of the directivity with respect to reflector's nodal displacements. Because the approximation formula is a linear function of nodal displacements, the gradient can be easily derived. Then, the method of the steepest descent is adopted, and an optimization iteration procedure is proposed. The iteration procedure includes two loops: an inner loop and an outer loop. In the inner loop, the gradient and pattern are calculated by matrix operation, which is very fast by using the pre-calculated data in the outer loop. In the outer loop, the ideal terms used in the inner loop to calculate the gradient and pattern are updated, and the real pattern is calculated by the PO method. Due to the high approximation accuracy, when the outer loop is performed once, the inner loop can be performed many times, which will save much time because the integration is replaced by matrix operation. In the end, a contoured beam covering the continental United States(CONUS) is designed, and simulation results show the effectiveness of the proposed algorithm.

Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.

The Effect of Quartz Window on Bistability of the Silicon Wafer in Lamp-Based Reactor

The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative-closed thermal system including the influence of quartz window as a spectral filter of lamp emission and a source of emitted thermal radiation. Energy equations for thermal fluxes involved in the heat input and output from the working wafer and quartz window are solved in spectral approximation. The transfer characteristics that are defined by the temperature dependencies of the silicon wafer and the quartz window on the temperature of the heater are accounted. It is shown that temperature bistability in the silicon wafer initiates an induced bistability into the quartz window that does not reveal bistable behavior because of the linear temperature dependence of its total optical characteristics. A possibility for simulation of the quartz window by spectral restriction of the heater radiation is confirmed. The availability of the weak bistable effect in the mode of zero effective heat exchange coefficient of a non-radiative component of the thermal flux removed from the working wafer has been obtained.

Characteristic-Based Time Domain Method for Cylindrically Conformal Microstrip Patch Antennas

The characteristics of a cylindrical conformal microstrip patch antenna are analyzed by using the characteristic-based time domain （CBTD） method. A governing equation in the cylindrical coordinate system is formulated directly to facilitate the analysis of cylindrically conformal microstrip patch antennas. The algorithm has second-order accuracy both in time and space domain and has the potential to eliminate the spurious wave reflection from the numerical boundaries of the computational domain, Numerical results demonstrate the important merits and accuracy of the proposed technique in computational electromagnetics,

Rheological Behavior of Bauxite-Based SiC-Containing Castables

Low cement (LC) and ultra low cement (ULC) bauxite SiC castables are important and high performance monolithic refractories and they have been widely used in iron making and incinerator linings. In this work, rheological behavior of LC and ULC bauxite based SiC containing castables has been studied, including the effects of SiC content and cement content on rheological properties of the castables. The results show that with an increase of SiC and cement content, rheological properties of the castables deteriorate. On the other hand, moderate amounts of SiC (4%～8%) and of calcium aluminate cement (2%～4%) have very slight influence on rheological properties, (i.e. when the castables are sheared their torque and yield torque only slightly increase with the shearing speed). The rheological characteristics of the castables follow Bingham fluid and always show shear thinning behavior.

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.