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Analysis of substrate eddy effects and distribution effects in silicon-based inductor model
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作者 武锐 廖小平 +1 位作者 张志强 杨乐 《Journal of Southeast University(English Edition)》 EI CAS 2009年第1期57-62,共6页
The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effect... The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor (6 turn, 3 060 μm in length) fabricated on low ( 1 Ω. cm) and high resistivity( 1 000 Ω.cm) silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%. 展开更多
关键词 planar spiral inductors substrate eddy effects distribution effects equivalent circuit model
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Silicon-based optoelectronic heterogeneous integration for optical interconnection
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作者 李乐良 李贵柯 +5 位作者 张钊 刘剑 吴南健 王开友 祁楠 刘力源 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第2期1-9,共9页
The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which ... The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on. 展开更多
关键词 silicon-based heterogeneous integration heterogeneous integrated materials heterogeneous integrated packaging optical interconnection
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Constructing high-toughness polyimide binder with robust polarity and ion-conductive mechanisms ensuring long-term operational stability of silicon-based anodes
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作者 Yongjun Kang Nanxi Dong +5 位作者 Fangzhou Liu Daolei Lin Bingxue Liu Guofeng Tian Shengli Qi Dezhen Wu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2024年第6期580-591,I0014,共13页
Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utiliz... Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries. 展开更多
关键词 Polyimide binder High toughness Robust ionic transport silicon-based anodes Lithium-ion batteries
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Regulating the Solvation Structure of Li^(+) Enables Chemical Prelithiation of Silicon-Based Anodes Toward High-Energy Lithium-Ion Batteries 被引量:5
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作者 Wenjie He Hai Xu +5 位作者 Zhijie Chen Jiang Long Jing Zhang Jiangmin Jiang Hui Dou Xiaogang Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第7期293-305,共13页
The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the che... The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations. 展开更多
关键词 Lithium-ion batteries silicon-based anodes Prelithiation Molecular dynamics simulations Solvation structure
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Research Towards Terahertz Power Amplifiers in Silicon-Based Process
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作者 CHEN Jixin ZHOU Peigen +3 位作者 YU Jiayang LI Zekun LI Huanbo PENG Lin 《ZTE Communications》 2023年第2期88-94,共7页
In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development ... In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process. 展开更多
关键词 power amplifier power combining SIGE silicon-based TERAHERTZ
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3D heterogeneous integration of wideband RF chips using silicon-based adapter board technology 被引量:3
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作者 Wang Yong Wei Wei +4 位作者 Yang Dong Sun Biao Zhang Xingwen Zhang Youming Huang Fengyi 《Journal of Southeast University(English Edition)》 EI CAS 2021年第1期8-13,共6页
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapt... An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB. 展开更多
关键词 silicon-based adapter board frequency mixing frequency multiplier multi-function chip
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Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology 被引量:2
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作者 王伟 黄北举 +1 位作者 董赞 陈弘达 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期677-683,共7页
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit ... A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored. 展开更多
关键词 optoelectronic integrated circuit complementary metal-oxide-semiconductor technology silicon-based light emitting device ELECTROLUMINESCENCE
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Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing 被引量:1
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作者 段倩倩 任馨宇 +5 位作者 菅傲群 张辉 冀健龙 张强 张文栋 桑胜波 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第12期110-114,共5页
The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of sil... The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm. 展开更多
关键词 of on Micro-Mechanism of silicon-based Waveguide Surface Smoothing in Hydrogen Annealing in IS
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Modification of methyl oleate for silicon-based biological lubricating base oil 被引量:1
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作者 Shixing Cui Zhi Yun Xia Gui 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2017年第1期130-136,共7页
A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative ... A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative of methyl oleate.Trimethylsilylation reaction was introduced to further improve methyl oleate oxidation stability and lubricity after epoxidation and open-ring reactions.The order of effectiveness of acid binding agent was N,N-diisopropylethylamine(DIEA) > pyridine > diethylamine > triethylamine,and the effects of various parameters on the trimethylsilylation reaction as well as on the silicon-oxygen bond stability and reaction yield were studied.A maximum yield of 34.54%was achieved at hydroxyl/trimethyl chlorosilane/DIEA molar ratio of1:1.25:1,reaction temperature 40℃,reaction time 1.5 h. 展开更多
关键词 Methyl oleate Trimethyl chlorosilane Acid binding agent N N-diisopropylethylamine Lubricity silicon-based biological lubricating base oil
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Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview 被引量:1
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作者 Ruili Wu Jerry Lopez +1 位作者 Yan Li Donald Y.C.Lie 《ZTE Communications》 2011年第3期28-35,共8页
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency (RF) power amplifiers (PAs) as well as the use of these technologies in mobile broadb... This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency (RF) power amplifiers (PAs) as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking (ET) design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols. 展开更多
关键词 radio frequency power amplifier silicon-based power amplifier envelope tracking class-E amplifier broadband PA class-J Doherty power amplifier
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Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity
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作者 Li-Fei Tian Ying-Xin Kuang +1 位作者 Zhong-Chao Fan Zhi-Yong Li 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第10期376-380,共5页
The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective ma... The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications. 展开更多
关键词 spatial light modulator HIGH REFLECTIVE materials silicon-based FABRY-PEROT cavity
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High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode
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作者 Zhiwei Huang Shaoying Ke +4 位作者 Jinrong Zhou Yimo Zhao Wei Huang Songyan Chen Cheng Li 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第3期447-453,共7页
A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is propo... A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is proposed and fabricated.The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates.The Si-and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm2 and 44 mA/cm2,respectively.Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate,an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD.These complementary metal–oxide–semiconductor(CMOS)compatible Si(or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency. 展开更多
关键词 silicon-based Schottky photodetector germanium epilayer indium-doped tin oxide
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一种基于耦合电感的高增益软开关谐振变换器 被引量:2
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作者 王哲 李驰 +1 位作者 郑泽东 李永东 《电工技术学报》 EI CSCD 北大核心 2024年第1期194-205,共12页
该文提出了一种具有高增益、软开关的新型谐振变换器。该谐振变换器使用耦合电感来提高电压增益,升压比不仅取决于占空比,还取决于耦合电感的变比,具有高增益的优点。此外,由于采用了有源钳位技术,漏感中的能量可以被回收利用,用来对开... 该文提出了一种具有高增益、软开关的新型谐振变换器。该谐振变换器使用耦合电感来提高电压增益,升压比不仅取决于占空比,还取决于耦合电感的变比,具有高增益的优点。此外,由于采用了有源钳位技术,漏感中的能量可以被回收利用,用来对开关管的结电容充放电提供能量,从而实现软开关。由于采用了耦合电感,所提出的变换器可以在较低的开关管电压应力的情况下实现较高的输出电压,因此可以使用低导通电阻的低压器件,从而提升系统的效率。该文分析了该谐振变换器的工作原理,并推导了输出电压、关断电流应力等参数的解析表达式。在此基础上,从理论上分析了该变换器取得软开关的条件,并对该变换器的各个器件的电压电流应力进行分析,为器件选型提供了理论依据。最后,搭建1kW实验样机,针对该文提出的基于耦合电感的谐振变换器的高增益、软开关、低电压应力、高效率等性能进行了实验验证。通过实验得出所提出的拓扑可以在10倍增益的情况下达到最高97.5%的效率,表明所提拓扑的优越性。 展开更多
关键词 耦合电感 谐振变换器 高增益 软开关
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一种应用于两相交错Boost的耦合电感的优化设计
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作者 刘计龙 代壮志 +2 位作者 李科峰 于龙洋 王来利 《海军工程大学学报》 CAS 北大核心 2024年第3期52-59,共8页
两相交错Boost变换器具有纹波电流小的优势,但其采用的交错并联技术增加了电感数量,进而增加了装置的体积和重量,不利于其功率密度的提升。耦合电感通过将多个磁性元件集成到一个磁芯实现磁路的部分共享,从而减小了磁元件的数量和重量... 两相交错Boost变换器具有纹波电流小的优势,但其采用的交错并联技术增加了电感数量,进而增加了装置的体积和重量,不利于其功率密度的提升。耦合电感通过将多个磁性元件集成到一个磁芯实现磁路的部分共享,从而减小了磁元件的数量和重量。因此,设计了一种反向耦合电感,并将其应用于两相交错Boost变换器,实现了装置功率密度的提升。首先,对反向耦合电感的工作原理和损耗来源进行分析;然后,在此基础上设计了一种改进的“EE”型磁芯,一方面有效提高了磁芯利用率,另一方面降低了电感的体积与重量;最后,通过有限元仿真对所提优化设计方案进行验证,同时搭建了功率等级为2 kW的两相交错Boost变换器实验平台。仿真和实验结果均验证了所提优化设计方案的有效性。 展开更多
关键词 耦合电感 两相交错Boost 电感设计 功率密度
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基于开关电感的宽电压增益双向DC/DC变换器 被引量:1
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作者 张超 王灼 《电力电子技术》 2024年第2期108-110,共3页
此处提出了一种用于储能系统的基于开关电感的宽电压增益双向DC/DC变换器。该变换器在实现双向升降压的同时进一步扩大了双向变换器的电压增益,可以适应不同电压等级的储能电池;相同电压增益下功率器件占空比有效降低,进一步减小了输入... 此处提出了一种用于储能系统的基于开关电感的宽电压增益双向DC/DC变换器。该变换器在实现双向升降压的同时进一步扩大了双向变换器的电压增益,可以适应不同电压等级的储能电池;相同电压增益下功率器件占空比有效降低,进一步减小了输入电流纹波,有助于提高电池充电性能。分析了放电和充电两种工作模式的工作原理,并搭建实验样机进行验证。实验结果表明在输出电压稳定的工况下,该变换器放电模式可以实现0.5~5倍的电压增益,充电模式可以实现0.2~2倍的电压增益,证明了所提变换器的双向升降压能力和宽电压增益能力。 展开更多
关键词 双向变换器 开关电感 宽电压增益
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卧式反应釜电磁感应加热设计 被引量:1
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作者 覃庆良 张磊 《化工自动化及仪表》 CAS 2024年第3期495-501,共7页
针对大型反应釜的感应加热难以进行大量实验验证的问题,通过将理论计算与有限元仿真相结合的方式,对计算得出的参数进行优化,选择合适的输出功率和谐振频率,完成感应器的设计。通过仿真可以更好对比不同匝数、自热对流和搅拌轴对加热的... 针对大型反应釜的感应加热难以进行大量实验验证的问题,通过将理论计算与有限元仿真相结合的方式,对计算得出的参数进行优化,选择合适的输出功率和谐振频率,完成感应器的设计。通过仿真可以更好对比不同匝数、自热对流和搅拌轴对加热的影响,更直观地查看工件温度分布情况,缩小计算参数误差,实现反应釜加热的工艺要求。 展开更多
关键词 电磁感应加热 感应器设计 有限元仿真 反应釜
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基于二次型升压变换器和开关电容的混合式升压方案研究
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作者 张全禹 孙培刚 卢振生 《电子器件》 CAS 2024年第2期397-403,共7页
提出一种混合式高升压比DC-DC变换器。该变换器由二次型升压变换器、开关电容和耦合电感单元集成。为了减少元件的数量,耦合电感一次侧与二次型升压变换器共用;二次型升压变换器的输出电容一分为二,并与开关电容共用。由于电源和负载之... 提出一种混合式高升压比DC-DC变换器。该变换器由二次型升压变换器、开关电容和耦合电感单元集成。为了减少元件的数量,耦合电感一次侧与二次型升压变换器共用;二次型升压变换器的输出电容一分为二,并与开关电容共用。由于电源和负载之间的共地特性,则输入电流连续。对所提变换器的电压增益进行了推导,并分析其电压应力。结果表明所提逆变器具备高电压增益、低电压应力的特性。最后,搭建了80 W的实验样机,实验结果验证了所提变换器的正确性和有效性。 展开更多
关键词 电压增益 DC/DC变换器 开关电容 耦合电感
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一种应用于光伏的高增益DC/DC变换器研究
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作者 陆斌 郭燕飞 王志强 《电子器件》 CAS 2024年第3期629-633,共5页
基于耦合电感、开关电容与输入电压源组成的基本功率单元,提出一种集成式新型DC/DC变换器。该拓扑结构具有模块化和可扩展性,耦合电感和开关电容结构组成的倍压单元提升了电路的升压比。漏感能量通过钳位电路回收,以降低开关管电压应力... 基于耦合电感、开关电容与输入电压源组成的基本功率单元,提出一种集成式新型DC/DC变换器。该拓扑结构具有模块化和可扩展性,耦合电感和开关电容结构组成的倍压单元提升了电路的升压比。漏感能量通过钳位电路回收,以降低开关管电压应力和功率损耗;同时缓解了二极管的反向恢复问题,优化了开关管和二极管的选择。详细介绍了稳态分析、工作原理和设计考虑;最后并制作了90 W实验样机,验证了理论分析的正确性。 展开更多
关键词 高电压增益 开关电容 耦合电感
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基于寄生电感优化的分立器件布局方法研究
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作者 张杰 陈怡飞 +2 位作者 余柳峰 谢卫冲 江路 《中南民族大学学报(自然科学版)》 CAS 2024年第4期547-553,共7页
为了探究分立器件与PCB组合形成的半桥电路时采用何种布局方式才能尽最大限度减小线路寄生电感的问题,基于换流回路寄生电感概念,提出了一种经优化的分立器件在PCB上的布局方式,进而减小换流回路的寄生电感,随后通过有限元仿真软件评估... 为了探究分立器件与PCB组合形成的半桥电路时采用何种布局方式才能尽最大限度减小线路寄生电感的问题,基于换流回路寄生电感概念,提出了一种经优化的分立器件在PCB上的布局方式,进而减小换流回路的寄生电感,随后通过有限元仿真软件评估并验证不同布局方式所产生的寄生电感,并结合LTspice电路仿真软件评估不同布局方式对器件电开关特性的影响,最后通过双脉冲实验验证了所设计的一种经过优化布局半桥电路的优越性.所提供的半桥电路的设计方法为分立器件在PCB上的布局提供了理论和技术支撑. 展开更多
关键词 分立器件 半桥电路 寄生电感 有限元仿真
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一种交叉倍压型高增益DC/DC变换器
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作者 秦明 冯耀星 +1 位作者 常忆雯 王克文 《电机与控制学报》 EI CSCD 北大核心 2024年第1期120-130,共11页
针对光伏发电、燃料电池发电等领域对高增益直流变换器的需求,以两相交错并联升压变换器为研究对象,由2个含有电感的倍压单元组合设计出实现电压提升的交叉倍压结构,据此提出了一种新颖的交叉倍压型高增益DC/DC变换器。该变换器可实现(3... 针对光伏发电、燃料电池发电等领域对高增益直流变换器的需求,以两相交错并联升压变换器为研究对象,由2个含有电感的倍压单元组合设计出实现电压提升的交叉倍压结构,据此提出了一种新颖的交叉倍压型高增益DC/DC变换器。该变换器可实现(3n+4)/(1-d)倍的高电压增益(1∶n为耦合电感匝数比,d为变换器占空比),且具有电路器件的低电压应力特性。对于漏感引起的开关管电压尖峰问题,引入了钳位电容构成释放漏感能量通道,同时提升了输出电压。介绍了新型交叉倍压型高增益变换器的拓扑结构,分析了变换器各模态的工作过程,推导了电压增益、输入电流纹波及各器件电压应力等稳态特性,并搭建样机进行实验研究,验证了该直流变换技术方案的可行性和先进性。 展开更多
关键词 DC/DC变换器 高增益 低输入电流纹波 交叉倍压 交错并联 耦合电感
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