Silicon-based optoelectronic heterogeneous integration for optical interconnection

The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.

Constructing high-toughness polyimide binder with robust polarity and ion-conductive mechanisms ensuring long-term operational stability of silicon-based anodes

Silicon-based materials have demonstrated remarkable potential in high-energy-density batteries owing to their high theoretical capacity.However,the significant volume expansion of silicon seriously hinders its utilization as a lithium-ion anode.Herein,a functionalized high-toughness polyimide(PDMI) is synthesized by copolymerizing the 4,4'-Oxydiphthalic anhydride(ODPA) with 4,4'-oxydianiline(ODA),2,3-diaminobenzoic acid(DABA),and 1,3-bis(3-aminopropyl)-tetramethyl disiloxane(DMS).The combination of rigid benzene rings and flexible oxygen groups(-O-) in the PDMI molecular chain via a rigidness/softness coupling mechanism contributes to high toughness.The plentiful polar carboxyl(-COOH) groups establish robust bonding strength.Rapid ionic transport is achieved by incorporating the flexible siloxane segment(Si-O-Si),which imparts high molecular chain motility and augments free volume holes to facilitate lithium-ion transport(9.8 × 10^(-10) cm^(2) s^(-1) vs.16 × 10^(-10) cm^(2) s~(-1)).As expected,the SiO_x@PDMI-1.5 electrode delivers brilliant long-term cycle performance with a remarkable capacity retention of 85% over 500 cycles at 1.3 A g^(-1).The well-designed functionalized polyimide also significantly enhances the electrochemical properties of Si nanoparticles electrode.Meanwhile,the assembled SiO_x@PDMI-1.5/NCM811 full cell delivers a high retention of 80% after 100 cycles.The perspective of the binder design strategy based on polyimide modification delivers a novel path toward high-capacity electrodes for high-energy-density batteries.

Recent progress and challenges in silicon-based anode materials for lithium-ion batteries

Anode materials for Li-ion batteries(LIBs)utilized in electric vehicles,portable electronics,and other devices are mainly graphite(Gr)and its derivatives.However,the limited energy density of Gr-based anodes promotes the exploration of alternative anode materials such as silicon(Si)-based materials because of their abundance in nature and low cost.Specifically,Si can store 10 times more energy than Gr and also has the potential to enhance the energy density of LIBs.Despite the many advantages of Si-based anodes,such as high theoretical capacity and low price,their widespread use is hindered by two major issues:charge-induced volume expansion and unreliable solid electrolyte interphase(SEI)propagation.In this detailed review,we highlight the key issues,current advances,and prospects in the rational design of Si-based electrodes for practical applications.We first explain the fundamental electrochemistry of Si and the importance of Si-based anodes in LIBs.The excessive volume increase,relatively low charge efficiency,and inadequate areal capacity of Si-based anodes are discussed to identify the barriers in enhancing their performance in LIBs.Subsequently,the use of binders(e.g.,linear polymer binders,branched polymer binders,cross-linked polymer binders,and conjugated conductive polymer binders),material-based anode composites(such as carbon and its derivatives,metal oxides,and MXenes),and liquid electrolyte construction techniques are highlighted to overcome the identified barriers.Further,tailoring Si-based materials and reshaping their surfaces and interfaces,including improving binders and electrolytes,are shown to be viable approaches to address their drawbacks,such as volume expansion,low charge efficiency,and poor areal capacity.Finally,we highlight that research and development on Si-based anodes are indispensable for their use in commercial applications.

Regulating the Solvation Structure of Li^(+) Enables Chemical Prelithiation of Silicon-Based Anodes Toward High-Energy Lithium-Ion Batteries

The solvation structure of Li^(+) in chemical prelithiation reagent plays a key role in improving the low initial Coulombic efficiency(ICE) and poor cycle performance of silicon-based materials. Never theless, the chemical prelithiation agent is difficult to dope active Li^(+) in silicon-based anodes because of their low working voltage and sluggish Li^(+) diffusion rate. By selecting the lithium–arene complex reagent with 4-methylbiphenyl as an anion ligand and 2-methyltetrahydrofuran as a solvent, the as-prepared micro-sized Si O/C anode can achieve an ICE of nearly 100%. Interestingly, the best prelithium efficiency does not correspond to the lowest redox half-potential(E_(1/2)), and the prelithiation efficiency is determined by the specific influencing factors(E_(1/2), Li^(+) concentration, desolvation energy, and ion diffusion path). In addition, molecular dynamics simulations demonstrate that the ideal prelithiation efficiency can be achieved by choosing appropriate anion ligand and solvent to regulate the solvation structure of Li^(+). Furthermore, the positive effect of prelithiation on cycle performance has been verified by using an in-situ electrochemical dilatometry and solid electrolyte interphase film characterizations.

3D heterogeneous integration of wideband RF chips using silicon-based adapter board technology

An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing

The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon- hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon- hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523nm to 0.461 nm.

Modification of methyl oleate for silicon-based biological lubricating base oil

A new kind of silicon-based biological lubricating base oil with good viscosity-temperature behavior,viscosity index,thermostability,oxidation stability and wear resistance performance was synthesized as a derivative of methyl oleate.Trimethylsilylation reaction was introduced to further improve methyl oleate oxidation stability and lubricity after epoxidation and open-ring reactions.The order of effectiveness of acid binding agent was N,N-diisopropylethylamine(DIEA) > pyridine > diethylamine > triethylamine,and the effects of various parameters on the trimethylsilylation reaction as well as on the silicon-oxygen bond stability and reaction yield were studied.A maximum yield of 34.54%was achieved at hydroxyl/trimethyl chlorosilane/DIEA molar ratio of1:1.25:1,reaction temperature 40℃,reaction time 1.5 h.

Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview

This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.

Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode

A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is proposed and fabricated.The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates.The Si-and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm2 and 44 mA/cm2,respectively.Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate,an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD.These complementary metal–oxide–semiconductor(CMOS)compatible Si(or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency.

Research Towards Terahertz Power Amplifiers in Silicon-Based Process

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

Electron vortices generation of photoelectron of H_(2)^(+) by counter-rotating circularly polarized attosecond pulses

Molecular-frame photoelectron momentum distributions(MF-PMDs) of an H_(2)^(+) molecule ion in the presence of a pair of counter-rotating circularly polarized attosecond extreme ultraviolet laser pulses is studied by numerically solving the two-dimensional time-dependent Schrodinger equation within the frozen-nuclei approximation. At small time delay, our simulations show that the electron vortex structure is sensitive to the time delay and relative phase between the counterrotating pulses when they are partially overlapped. By adjusting time delay and relative phase, we have the ability to manipulate the MF-PMDs and the appearance of spiral arms. We further show that the internuclear distance can affect the spiral vortices due to its different transition cross sections in the parallel and perpendicular geometries. The lowest-order perturbation theory is employed to interpret these phenomena qualitatively. It is concluded that the internuclear distancedependent transition cross sections and the confinement effect in diatomic molecules are responsible for the variation of vortex structures in the MF-PMDs.

Unraveling the evolution of Cathode-Solid electrolyte interface using operando X-ray Photoelectron spectroscopy

Understanding the evolution of the solid electrolyte-electrode interface is currently one of the most challenging obstacles in the development of solid-state batteries(SSBs).Here,we develop an X-ray Photoelectron Spectroscopy(XPS)that allows for operando measurement during cycling.Based on theoretical analysis and the modulated electrode and detector co-grounding mode,the displacement of binding energy can be correlated with the surface electrostatic potential of the material,revealing the charge distribution and composition evolution of the space charge layer between the cathode and the electrolyte.In the investigation of typical LiCoO_(2)(LCO)/Li6PS5Cl(LPSC)/Li-In batteries,we observed the static potential difference and oxidative decomposition between LPSC and LCO,and the effectiveness of the LiNbO3 coating in reducing potential difference and inhibiting the diffusion of Co and oxidation of S species.Furthermore,our study also revealed that the potential drop between LiNi0⋅8Co0⋅1Mn0⋅1O_(2) and LPSC is smaller than that of LCO,whilst that between Li3InCl6 and LCO remains near zero.The proposed operando XPS method offers a novel approach for real-time monitoring of interface potential and species formation,providing rational guidance for the interface engineering in SSBs.

Photoelectron momentum distributions of triatomic CO_(2)molecules by circularly polarized attosecond pulses

Molecular-frame photoelectron momentum distributions(MF-PMDs)have been studied for imaging molecular structures.We investigate the MF-PMDs of CO_(2)molecules exposed to circularly polarized(CP)attosecond laser pulses bysolving the time-dependent Schrodinger equations based on the single-active-electron approximation frames.Results showthat high-frequency photons lead to photoelectron diffraction patterns,indicating molecular orbitals.These diffractionpatterns can be illustrated by the ultrafast photoionization models.However,for the driving pulses with 30 nm,a deviationbetween MF-PMDs and theoretically predicted results of the ultrafast photoionization models is produced because theCoulomb effect strongly influences the molecular photoionization.Meanwhile,the MF-PMDs rotate in the same directionas the helicity of driving laser pulses.Our results also demonstrate that the MF-PMDs in a CP laser pulse are the superpositionof those in the parallel and perpendicular linearly polarized cases.The simulations efficiently visualize molecularorbital geometries and structures by ultrafast photoelectron imaging.Furthermore,we determine the contribution of HOMOand HOMO-1 orbitals to ionization by varying the relative phase and the ratio of these two orbitals.

Ultrafast Dynamics Through Conical Intersections in 2,6-dimethylpyridine Studied with Time-resolved Photoelectron Imaging

The ultrafast dynamics through conical intersections in 2,6-dimethylpyridine has been studied by femtosecond time-resolved photoelectron imaging coupled with time-resolved mass spectroscopy. Upon absorption of 266 nm pump laser, 2,6-dimethylpyridine is excited to the S2 state with a ππ character from So state. The time evolution of the parent ion signals consists of two exponential decays. One is a fast component on a timescale of 635 fs and the other is a slow component with a timescale of 4.37 ps. Time-dependent photo- electron angular distributions and energy-resolved photoelectron spectroscopy are extracted from time-resolved photoelectron imaging and provide the evolutive information of S2 state. In brief, the ultrafast component is a population transfer from S2 to S1 through the S2/S1 conical intersections, the slow component is attributed to simultaneous IC from the S2 state and the higher vibrational levels of S1 state to So state, which involves the coupling of S2/S0 and S1/So conical intersections. Additionally, the observed ultrafast S2--＋S1 transition occurs only with an 18% branching ratio.

Silicon-based metal-organic frameworks(SiMOFs)for immunogenic cell death in cancer therapy

Silicon-based nanomaterials,known for their unique properties and favorable biocompatibility,significantly impact sectors like energy,electronics,and biomedicine.Recently,metalorganic frameworks(MOFs)have emerged as promising candidates for biomedicine,characterized by adjustable chemical composition,high porosity,and biodegradability.However,the combination of silicon with MOFs to create silicon-based MOF nanostructures(SiMOFs)remains underexplored.Herein,we establish a diverse library of SiMOFs with various nanostructures,including flower-like,capsule-like,hexagonal snowflake-like,and necklace-like morphologies via microwave-assisted synthesis.These SiMOFs,with their spacious interiors,are ideal for drug delivery.They are used to load drugs and create drug-loaded SiMOFs(e.g.,SiFeO).SiFeO exhibits excellent photothermal effects and high reactive oxygen species(ROS)generation capacity,enabling synergistic treatments involving chemochemodynamic-photothermal therapy.This approach efficiently triggers immunogenic cell death(ICD)and demonstrates excellent antitumor efficacy in vivo.Immunofluorescence staining reveals that the synergistic therapy can modulate the tumor microenvironment(TME)by reducing M2-phenotype macrophages,increasing the activation of antigen-presenting cells(APCs),enhancing the infiltration of CD4^(+)and CD8^(+)T cells,elevating Granzyme B production,and decreasing the presence of immunosuppressive regulatory T cells(Tregs).Consequently,drug-loaded SiMOFs-mediated combination therapy effectively reverses the immunosuppressive TME and activates robust antitumor immune responses by inducing ICD in tumor cells,ultimately achieving superior anticancer efficacy.

Femtosecond Two-Photon Detachment of Cu^- Studied By Photoelectron Imaging

The wavelength dependence of photoelectron angular distributions （PADs） of two-photon detachment of Cu^- has been directly studied by using the photoelectron map imaging. Results show that for the laser field intensity of 6.0×10^10W/cm^2, PADs exhibit dramatic change with the external field wavelength. Comparison between the experimental observation and the lowest-order perturbation theory prediction indicates that the pattern of PADs can be explained by the interference of the s and d partial waves in the final state. Relative contri- butions of s and d partial waves in the two-photon detachment at different laser wavelengths are obtained.

Structural and Electronic Properties of ConC3-/0 and ConC4-/0 （n=1-4） Clusters： Mass-Selected Anion Photoelectron Spectroscopy and Density Functional Theory Calculations

We investigated the structural evolution and elecfronic properties of ConC3-/0 and ConC4-/0 （n=1-4） clusters by using mass-selected photoelectron spectroscopy and density functional theory calculations. The adiabatic and vertical detachment energies of CO1-4C3- and COl-4C4- were obtained from their photoelectron spectra. By comparing the theoretical results with the experimental data, the global minimum structures were determined. The results indicate that the carbon atoms of ConC3-/0 and ConC4-/0 （n=1-4） are separated from each other gradually with increasing number of cobalt atoms but a C2 unit still remains at n=4. It is interesting that the Co2C3- and Co2C4- anions have planar structures whereas the neutral Co2C3 and Co2C4 have linear structures with the Co atoms at two ends. The Co3C3- anion has a planar structure with a Co2C2 four-membered ring and a Co3C four-membered ring sharing a Co-Co bond, while the neutral Co3C3 is a three-dimensional structure with a C2 unit and a C atom connecting to two faces of the Co3 triangle.

Autler-Townes splitting in photoelectron spectra of K_2 molecule

We investigate Autler-Townes splitting in the photoelectron spectra of K2 molecule driven by pump-probe pulses via employing the time-dependent wave packet approach. It is found that the magnitude of Aulter-Townes splitting varies with the wavelength of the intense laser pulse. In particular, the phenomenon of Aulter-Townes splitting vanishes for the far-off resonance of the pump pulse. Also, the split peaks of Autler Townes in the case of resonant pump pulse give us an approach to directly obtaining the transition dipole moment of a molecule.