随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了...随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了为抑制短沟道效应而引入的不同UTBB SOI MOSFETs结构,分析了这些结构能够有效抑制短沟道效应(如漏致势垒降低、亚阈值摆幅、关态泄露电流、开态电流等)的机理;而后基于这六种技术,对近年来在UTBB SOI MOSFETs短沟道效应抑制方面所做的工作进行了总结;最后对未来技术的发展进行了展望。展开更多
Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an...Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.展开更多
On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- s...On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.展开更多
A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving...A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson＇s equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations.展开更多
A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential dis...A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson＇s equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.展开更多
Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristic...Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.展开更多
The main electrical properties of advanced Silicon On Insulator MOSFETs are addressed. The subthreshold and high field operations are analysed as a function of device architecture. The special SOI parasitic phenomena,...The main electrical properties of advanced Silicon On Insulator MOSFETs are addressed. The subthreshold and high field operations are analysed as a function of device architecture. The special SOI parasitic phenomena, such as the floating body potential and temperature, are critically reviewed. The main limitations of submicron MOSFET are comparatively evaluated for various SOI structures. Short channel and hot carrier effects as well as the reliability of the SOI technology are investigated for gate length down to sub\|0 1 micron.展开更多
The speed performance and static power dissipation of the ultra-thin-body （UTB） MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width （Lsp） and sil...The speed performance and static power dissipation of the ultra-thin-body （UTB） MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width （Lsp） and silicon film thickness （tsi） are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator （SOI） MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.展开更多
Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors ...Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.展开更多
Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flick...Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.展开更多
The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surfac...The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
文摘随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了为抑制短沟道效应而引入的不同UTBB SOI MOSFETs结构,分析了这些结构能够有效抑制短沟道效应(如漏致势垒降低、亚阈值摆幅、关态泄露电流、开态电流等)的机理;而后基于这六种技术,对近年来在UTBB SOI MOSFETs短沟道效应抑制方面所做的工作进行了总结;最后对未来技术的发展进行了展望。
文摘Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61404151 and 61574153
文摘On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.
文摘A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson＇s equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations.
基金Project supported by Key Project of National Natural Science Foundation of China（50531060） National Science Found for Distinguished Young Scholars of China（10525211）+2 种基金 National Natural Science Foundation of China（10572124 10472099） Key Project of Scientific and Technological Department of Hunan Province （05FJ2005）, and the Open Project Program of Low Dimensional Materials ＆ Application Technology （Xiangtan University）, Ministry of Education, China （KF0602）.
文摘A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson＇s equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.
文摘Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.
文摘The main electrical properties of advanced Silicon On Insulator MOSFETs are addressed. The subthreshold and high field operations are analysed as a function of device architecture. The special SOI parasitic phenomena, such as the floating body potential and temperature, are critically reviewed. The main limitations of submicron MOSFET are comparatively evaluated for various SOI structures. Short channel and hot carrier effects as well as the reliability of the SOI technology are investigated for gate length down to sub\|0 1 micron.
基金Project supported by the National Natural Science Foundation of China （Grant No 60625403）, the State Key Development Program for Basic Research of China （Grant No 2006CB302701）.
文摘The speed performance and static power dissipation of the ultra-thin-body （UTB） MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width （Lsp） and silicon film thickness （tsi） are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator （SOI） MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61306126,61306127 and 61106015the Science and Technology Commission of Shanghai Municipality under Grant Nos 12ZR1453000,12ZR1453100 and 12ZR1436300CAS International Collaboration and Innovation Program on High Mobility Materials Engineering.
文摘Short-channel high-mobility Si/Si_(0.5)Ge_(0.5)/silicon-on-insulator(SOI)quantum-well p-type metal-oxide-semiconductor field effect transistors(p-MOSFETs)were fabricated and electrically characterized.The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100 mV/dec.HfO_(2)/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved.The effective hole mobility of the transistors reaches 200 cm^(2)/V·s,which is 2.12 times the Si universal hole mobility.
基金Supported by the National Postdoctoral Program for Innovative Talents under Grant No BX201600037the Science and Technology Research Project of Guangdong Province under Grant Nos 20158090901048 and 2015B090912002the Distinguished Young Scientist Program of Guangdong Province under Grant No 2015A030306002
文摘Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674008,61421005,and 61804003)the National Key Research and Development Program of China(Grant No.2016YFA0202101)the China Postdoctoral Science Foundation(Grant Nos.2018M630034 and 2019T120017)。
文摘The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
