The optical properties of GaN-based blue light-emitting diodes(LEDs)are extremely important to study as these LEDs are utilized in a great many industries due to their excellent qualities,including high brightness,hig...The optical properties of GaN-based blue light-emitting diodes(LEDs)are extremely important to study as these LEDs are utilized in a great many industries due to their excellent qualities,including high brightness,high energy efficiency,low energy consumption,and rapid reaction time.In this paper,Silvaco TCAD simulation software is used to do two-dimensional modeling and simulation of a GaN-based blue single quantum well vertical structure LED,with an emphasis on varied forward voltages,In components in InGaN,and quantum well thickness.The volt-ampere characteristic curve is compared and evaluated,as well as the energy band structure,carrier concentration,radiation recombination efficiency,electroluminescence spectrum,and internal current density distribution.The results show that when the forward voltage is 3.5V and the thickness of the quantum well is constant,the luminescence spectrum will show a red shift with the increase of the In content in the quantum well,and the luminescence spectrum will also show a red shift when the thickness of the quantum well is increased.However,when the quantum well thickness and In component are kept constant,the luminescence spectrum appears a red shift with increasing forward voltage.展开更多
文摘The optical properties of GaN-based blue light-emitting diodes(LEDs)are extremely important to study as these LEDs are utilized in a great many industries due to their excellent qualities,including high brightness,high energy efficiency,low energy consumption,and rapid reaction time.In this paper,Silvaco TCAD simulation software is used to do two-dimensional modeling and simulation of a GaN-based blue single quantum well vertical structure LED,with an emphasis on varied forward voltages,In components in InGaN,and quantum well thickness.The volt-ampere characteristic curve is compared and evaluated,as well as the energy band structure,carrier concentration,radiation recombination efficiency,electroluminescence spectrum,and internal current density distribution.The results show that when the forward voltage is 3.5V and the thickness of the quantum well is constant,the luminescence spectrum will show a red shift with the increase of the In content in the quantum well,and the luminescence spectrum will also show a red shift when the thickness of the quantum well is increased.However,when the quantum well thickness and In component are kept constant,the luminescence spectrum appears a red shift with increasing forward voltage.
