Preparation of silver tin oxide powders by hydrothermal reduction and crystallization

Silver tin oxide composite powders were synthesized by the hydrothermal method with a silver ammine solution and a Na2SnO3 solution as raw materials. H2C2O4 was used as the co-precipitator of silver ions and tin ions. The co-precipitation conditions were investigated. The results show that the co-precipitate of Ag2C2O4 and Sn（OH）4 is available when the pH value of the solution is 4.27-8.36. Using the obtained precipitate as precursor,the reduction of Ag＋ and the crystallization of tin oxide were carried out simultaneously by the hydrothermal method and silver tin oxide composite powders were obtained. The composite powders were characterized by X-ray diffraction （XRD） analysis,scanning electron microscope （SEM）,and energy spectrum analysis. The results show that the silver tin oxide composite powders are small with a diameter of about 2 μm and with homogeneous distribution of tin.

Preparation of indium tin oxide targets with a high density and single phase structure by normal pressure sintering process

The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.

Nitrogen doped tin oxide nanostructured catalysts for selective electrochemical reduction of carbon dioxide to formate

Tin/tin oxide materials are key electrocatalysts for selective conversion of CO;to formate/formic acid.Herein we report a tin oxide material with nitrogen doping by using ammonia treatment at elevated temperature. The N doped material demonstrated enhanced electrocatalytic CO;reduction activity, showing high Faradaic efficiency（90%） for formate at -0.65 V vs. RHE with partial current density of 4 mA/cm;.The catalysis was contributed to increased electron negativity of N atom compared to O atom. Additionally, the N-doped catalyst demonstrates sulfur tolerance with retained formate selectivity. The analysis after electrolysis shows that the catalyst structure partially converts to metallic Sn, and thus the combined Sn/N-SnO;is the key for the active CO;catalysis.

Preparation of Highly Dispersed Antimony-doped Tin Oxide Nano-powder via Ion-exchange Hydrolysis of SnCl_4 and SbCl_3 and Azeotropic Drying

Antimony-doped tin hydroxide colloid precipitates have been synthesized by hydrolysis of SnCl4 and SbCl3 using： （1） an ion-exchange hydrolysis to remove chlorine ions, and （2） isoamyl acetate as an azeotropic solvent to obviate water. The obtained dried powder is of high dispersivity without any need for further grinding. The size and dispersivity of the final particles are investigated with the aid of TG-DTA, BET, XRD and TEM. After having calcined, the antimony-doped tin oxide nanopowder possesses a tetragonal rutile structure with high dispersivity, uniform particles and low hard agglomeration.

Tin oxide-graphite composite for lithium storage material in lithium-ion batteries

A SnO-graphite composite material, which can deliver high capacities and good cycling stability compared with unsupported SnO, was described. This material prepared via chemical co-precipitation reaction in the presence of graphite consists of high dispersion of SnO with a size of about several hundred nanometers in the graphite. The phase structure was analyzed by X-ray diffraction (XRD). The morphology and the element distribution were examined by scanning electron microscopy (SEM) equipped with energy spectrum. The results show that the SnO-graphite composites produced by slowly hydrolysis have higher rechargeable capacities than pure graphite and better cycling performance than SnO.

The feasibility study of the indium oxide supported silver catalyst for selective hydrogenation of CO_(2)to methanol

Silver catalyst has been extensively investigated for photocatalytic and electrochemical CO_(2) reduction.However,its high activity for selective hydrogenation of CO_(2) to methanol has not been confirmed.Here,the feasibility of the indium oxide supported silver catalyst was investigated for CO_(2) hydrogenation to methanol by the density functional theoretical(DFT)study and then by the experimental investigation.The DFT study shows there exists an intense Ag-In_(2)O_(3) interaction,which causes silver to be positively charged.The positively charged Ag species changes the electronic structure of the metal,facilitates the formation of the Ag-In_(2)O_(3) interfacial site for activation and dissociation of carbon dioxide.The promoted CO_(2) dissociation leads to the enhanced methanol synthesis via the CO hydrogenation route as CO_(2)^(*)→CO^(*)→HCO^(*)→H_(2)CO^(*)→H_(3)CO^(*)→H_(3)COH^(*).The Ag/In_(2)O_(3)catalyst was then prepared using the deposition-precipitation method.The experimental study confirms the theoretical prediction.The methanol selectivity of CO_(2) hydrogenation on Ag/In_(2)O_(3) reaches 100.0%at reaction temperature of 200℃.It remains more than 70.0%between 200 and 275℃.At 300℃and 5 MPa,the methanol selectivity still keeps 58.2%with a CO_(2) conversion of 13.6%and a space-time yield(STY)of methanol of 0.453 g_(methanol)g_(cat)^(-1)h^(-1),which is the highest methanol STY ever reported for silver catalyst.The catalyst characterization confirms the intense Ag-In_(2)O_(3)interaction as well,which causes high Ag dispersion,increases and stabilizes the oxygen vacancies and creates the active Ag-In_(2)O_(3)interfacial site for the enhanced CO_(2)hydrogenation to methanol.

Tin oxide(SnO_2) as effective electron selective layer material in hybrid organic–inorganic metal halide perovskite solar cells

The emergence of hybrid organic-inorganic metal halide perovskite solar cells （PSCs） causes a break through in the solar technology recently due to its fabrication processes. The dramatic enhancenlent in in 2009 to the recent certified record PCE of 22.7% superior optoelectronic properties and the low-cost power conversion efficiency （PCE） of PSCs flom 3.8% ndicates huge potential of PSCs for future high efficiency and large scale photovoltaic manufacturing. The electron selective layer （ESL） plays an important role in electron extraction and hole blocking function in PSCs, and there have been great interest in developing efficient ESL materials. Recently, tin oxide （SnO2） as an ESL has attracted significant research attentions owing to its low temperature preparation processes as well as yielding high PCE and good stability of PSCs. In this perspective article, we focus on the development progress of SnO2 as an ESL m PSCs, and discuss the strategies for preparing SnO2 to achieve PSCs with high efficiency, less hysteresis and good device stability.

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.

Low temperature H_2S sensor based on copper oxide/tin dioxide thick film

Nanostructured tin dioxide （SnO2） powders were prepared by a sol-gel dialytic process and and the doping of CuO on it was completed by a deposition-precipitation method.The thick film sensors were fabricated from the CuO/SnO2 polycrystalline powders.Sensing behavior of the sensor was investigated with various gases including CO,H2,NH3,hexane,acetone,ethanol,methanol and H2S in air.The as-synthesized gas sensor had much better response to H2S than to other gases.At the same time,the CuO/SnO2 sensor had enough sensitivity,together with fast response and recovery,to distinguish H2S from those gases at 160 and 210 ℃.Therefore,it might have promising applications in the future.

Silver(Ⅰ)Oxide Mediated Regioselective Monoacylation of 2,4-Dihydroxyls in L-Rhamnopyranosides

A series of acyls （Ac, Bz and Ts） were introduced regioselectively to the 2-hydroxyl in methyl and ally 3-O-benzyl-α-L-rhamnopyranosides mediated by silver（I） oxide in the presence of a catalytic amount of potassium iodide in 56-78% yields.

Electrical and optical properties of indium tin oxide/epoxy composite film

The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.

Preparation,Characterization and Electronic Properties of Fluorine-doped Tin Oxide Films

Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

Polyimide-silver nanocomposite containing phosphine oxide moieties in the main chain:Synthesis and properties

New flame-retardant polyimide-silver nanocomposite containing phosphine oxide moiety in the main chain was synthesized by a convenient ultraviolet irradiation technique.A precursor such as AgNO_3 was used as the source of the silver particles.Polyimide 6 as a source of polymer was synthesized by polycondensation reaction of bis（3-aminophenyl） phenyl phosphine oxide 4 with pyromellitic anhydride 5 in the presence of iso-quinoline as base and in m-cresol solution.The resulting composite film was characterized by FTIR spectroscopy,X-ray diffraction（XRD）,transmission electron microscopy（TEM）,thermogravimetry（TGA） and differential scanning calorimetry（DSC）.The average size of the nanometer Ag particles is about 10 nm.The temperature of 5 and 10%weight loss and also the char yield at 600℃of polyimide-silver nanocomposite 6a were higher than the pure PI 6.

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

Preparation of High Quality Indium Tin Oxide Film on a Microbial Cellulose Membrane Using Radio Frequency Magnetron Sputtering

微生物引起的纤维素(MC ) 膜由醋菌属 xylinum NUST4.1 生产了，为透明的铟锡氧化物(ITO ) 的制造被用作灵活底层电极。透明、传导性的 ITO 薄电影在房间温度使用收音机频率(RF ) 磁控管劈啪作响在 MC 膜上被扔。最佳 ITO 免职条件被检验水晶的结构，有 X 光检查衍射(XRD ) 的表面形态学和 optoelectrical 特征，扫描电子显微镜学(SEM ) ，原子力量显微镜学(AFM ) ，和紫外光谱学完成。样品的表抵抗与一根四点的探针被测量，这部电影的抵抗力是计算的。结果表明扔的 ITO 晶体的比较喜欢的取向强烈依赖于与氧内容(O2/Ar，体积比率) 在劈啪作响的房间。并且 ITO 水晶的结构直接决定扔 ITO 的电影的传导性。高传导性[pBAD33 上的 PBAD 的表抵抗 120 ntrol，能生产 CoQ10 直到 3.24 mg？

Preparation of tin-oxide nanotubes as anode for Li-ion batteries

The influence of nanostructure on the electrochemical properties of Li-ion battery was investigated. Tin-oxide nanotubes were prepared by combining sol-gel method with polycarbonate template. Scanning electron microscopy and X-ray diffractometry were applied to characterize the obtained material. The electrochemical measurements were conducted on the nanostructured tin-oxides as electrode of Li-ion batteries. The XRD data indicate that the wall of tube is composed of cassiterite crystals of several nanometers. The electrochemical measurements show that the reaction under potential 0.1-0.2 V is possibly related to the tubular structure of the material. It is suggested that the trapping of Li by dangling bonds and defects sites also contributes to the larger irreversible capacity loss in the first discharge.

Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Effects of SiO_2 and TiO_2 on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition

Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.