Influence of Simulated Outside-Reactor Irradiation on Anticorrosion Property of Austenitic Stainless Steel

The influence of γ-ray irradiation on the properties of inside-reactor stainless steel structures was studied by simulating the working condition of pressurized water reactor （PWR） first circuit and the outside-reactor y-ray irradiation. The result shows that the simulated outside-reactor irradiation （irradiation dose 4. 4 ）〈 104 Gy） has no influence on anticorrosion properties of solutionized SUS304 austenitic stainless steel, including intergranular corrosion （IC） and stress corrosion cracking （SCC）. Anticorrosion properties （IC, SCC） of sensitized SUS304 austenitic stainless steel are reduced by simulated outside-reactor irradiation. The longer the sensitized time is, the more obvious the influence is.

Variation of Radiation Damage with Irradiation Temperature and Dose in CLAM Steel

The dependences of radiation induced defects on irradiation temperature up to 700℃ at 15 dpa and on irradiation dose up to 85 dpa at room temperature have been investigated by the heavy ion irradiation and the positron annihilation lifetime spectroscopy for the CLAM. A void size peak is observed at -500℃ where the vacancy cluster contains 9 vacancies and has an average diameter of 0.59 nm. The size of the vacancy clusters increases with the increase of irradiation dose at room temperature, and the vacancy cluster at 85 dpa consists of 9 vacancies and reaches a size of 0.60 nm in diameter. The absolute values of the void size at the peak and the increase of void size with dose in the CLAM steel are negligible compared to those of the normal stainless steels, indicating that the CLAM steel has good radiation resistant property.

Irradiation-induced void evolution in iron：A phase-field approach with atomistic derived parameters

A series of material parameters are derived from atomistic simulations and implemented into a phase field（PF） model to simulate void evolution in body-centered cubic（bcc） iron subjected to different irradiation doses at different temperatures.The simulation results show good agreement with experimental observations — the porosity as a function of temperature varies in a bell-shaped manner and the void density monotonically decreases with increasing temperatures; both porosity and void density increase with increasing irradiation dose at the same temperature. Analysis reveals that the evolution of void number and size is determined by the interplay among the production, diffusion and recombination of vacancy and interstitial.

TBI Technique Improvements for Anesthetized Pediatric Patients Based on Near-Miss Incident Reporting

Purpose: To share our clinical experience of an optimized and comprehensive pediatric TBI technique. Methods and Materials: Through the use of incident learning, safety-critical areas were identified in our procedure for total body irradiation (TBI) for pediatric patients under anesthesia for bone-marrow transplant. The previous procedure lacked flexibility to accommodate various requests from the anesthesia team due to the wide range of patient sizes. To address this issue and to improve the process overall, we updated our procedure for TBI simulation, dosimetry planning, patient setup during treatment, and in vivo dosimetry. A simulation form was redesigned with additional detailed instructions and documentation requirements. The dose calculation procedure was reformulated to remove dependence on setup variations. Tissue compensation determination and therefore dose uniformity were improved by introducing rigorous calculation methods. Calculations were performed on 28 previously-treated patients to compare the dose uniformity using the new versus previous methods. Results: The new procedures improve interdepartmental communication, simplify the workflow, decrease the risk of treating patients in a setup that differs from that used during the simulation, and reduce dose heterogeneity. The new compensator design significantly improved patient dose uniformity: 0.8% ± 0.4% (new method) vs. 4.2% ± 2.3% (previous method) (p Conclusion: A near-miss incident reporting system was used to improve the safety and quality of pediatric TBI procedures under anesthesia.

g-C3N4/Ag/GO Composite Photocatalyst with Efficient Photocatalytic Performance: Synthesis, Characterization, Kinetic Studies, Toxicity Assessment and Degradation Mechanism

The g-C3N4/Ag/GO(CNAG)photocatalysts were synthesized by a facile two-step reaction route.The as-prepared CNAG samples were characterized by X-ray diffraction(XRD),Fourier transform-infrared spectroscopy(FTIR),X-ray photoelectron spectroscopy(XPS),photoluminescence spectroscopy(PL)and ultraviolet-visible diffuse reflectance spectroscopy techniques(UV-vis DRS).The photocatalytic activity was obtained by degrading rhodamine B(RhB)under simulated sunlight and the results showed that photocatalytic activity of CNAG was much higher than that of pure g-C3N4 and g-C3N4/Ag.When the mass ratio of GO was 6%,the as-prepared CNAG-6%sample possessed the highest photocatalytic activity and the kinetic constant of RhB degradation was 0.077 min-1,which was almost 4.3 times higher than that of pure g-C3N4(0.018 min-1)and 2.5 times higher than that of the g-C3N4/Ag(0.031 min-1)composite,respectively.The toxicity of CNAG samples was assessed via seed germination experiment and no significant inhibitory effect was observed.The enhanced photocatalytic activity could be attributed to the synergistic effect of partial surface plasma resonance(SPR)effect of Ag,strong visible light absorption and the high separation efficiency of photon-generated carrier.The CNAG-6%sample exhibited excellent stability during the cycle experiment.Finally,a possible photocatalytic mechanism was proposed.

Simulation model for electron irradiated IGZO thin film transistors

An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.