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Influence of Simulated Outside-Reactor Irradiation on Anticorrosion Property of Austenitic Stainless Steel
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作者 GU Bao-shan JI Xiao-chun +1 位作者 ZHANG Qi-fu LIU Jian-hua 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2006年第2期45-48,共4页
The influence of γ-ray irradiation on the properties of inside-reactor stainless steel structures was studied by simulating the working condition of pressurized water reactor (PWR) first circuit and the outside-rea... The influence of γ-ray irradiation on the properties of inside-reactor stainless steel structures was studied by simulating the working condition of pressurized water reactor (PWR) first circuit and the outside-reactor y-ray irradiation. The result shows that the simulated outside-reactor irradiation (irradiation dose 4. 4 )〈 104 Gy) has no influence on anticorrosion properties of solutionized SUS304 austenitic stainless steel, including intergranular corrosion (IC) and stress corrosion cracking (SCC). Anticorrosion properties (IC, SCC) of sensitized SUS304 austenitic stainless steel are reduced by simulated outside-reactor irradiation. The longer the sensitized time is, the more obvious the influence is. 展开更多
关键词 simulated irradiation IC SCC stainless steel antieorrosion
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Variation of Radiation Damage with Irradiation Temperature and Dose in CLAM Steel 被引量:1
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作者 郑永男 黄群英 +6 位作者 彭蕾 左翼 范平 周冬梅 袁大庆 吴宜灿 朱升云 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第7期629-631,共3页
The dependences of radiation induced defects on irradiation temperature up to 700℃ at 15 dpa and on irradiation dose up to 85 dpa at room temperature have been investigated by the heavy ion irradiation and the positr... The dependences of radiation induced defects on irradiation temperature up to 700℃ at 15 dpa and on irradiation dose up to 85 dpa at room temperature have been investigated by the heavy ion irradiation and the positron annihilation lifetime spectroscopy for the CLAM. A void size peak is observed at -500℃ where the vacancy cluster contains 9 vacancies and has an average diameter of 0.59 nm. The size of the vacancy clusters increases with the increase of irradiation dose at room temperature, and the vacancy cluster at 85 dpa consists of 9 vacancies and reaches a size of 0.60 nm in diameter. The absolute values of the void size at the peak and the increase of void size with dose in the CLAM steel are negligible compared to those of the normal stainless steels, indicating that the CLAM steel has good radiation resistant property. 展开更多
关键词 radiation damage CLAM steel heavy ion irradiation simulation positron lifetime
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Irradiation-induced void evolution in iron:A phase-field approach with atomistic derived parameters 被引量:1
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作者 Yuan-Yuan Wang Jian-Hua Ding +5 位作者 Wen-Bo Liu Shao-Song Huang Xiao-Qin Ke Yun-Zhi Wang Chi Zhang Ji-Jun Zhao 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期363-369,共7页
A series of material parameters are derived from atomistic simulations and implemented into a phase field(PF) model to simulate void evolution in body-centered cubic(bcc) iron subjected to different irradiation do... A series of material parameters are derived from atomistic simulations and implemented into a phase field(PF) model to simulate void evolution in body-centered cubic(bcc) iron subjected to different irradiation doses at different temperatures.The simulation results show good agreement with experimental observations — the porosity as a function of temperature varies in a bell-shaped manner and the void density monotonically decreases with increasing temperatures; both porosity and void density increase with increasing irradiation dose at the same temperature. Analysis reveals that the evolution of void number and size is determined by the interplay among the production, diffusion and recombination of vacancy and interstitial. 展开更多
关键词 phase field method atomistic simulation void evolution irradiation
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TBI Technique Improvements for Anesthetized Pediatric Patients Based on Near-Miss Incident Reporting
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作者 Ning Cao Eric C. Ford +4 位作者 Matthew J. Nyflot Ralph P. Ermoian Nicole W. Pelly Lori Young Kristi Hendrickson 《International Journal of Medical Physics, Clinical Engineering and Radiation Oncology》 2016年第4期270-280,共12页
Purpose: To share our clinical experience of an optimized and comprehensive pediatric TBI technique. Methods and Materials: Through the use of incident learning, safety-critical areas were identified in our procedure ... Purpose: To share our clinical experience of an optimized and comprehensive pediatric TBI technique. Methods and Materials: Through the use of incident learning, safety-critical areas were identified in our procedure for total body irradiation (TBI) for pediatric patients under anesthesia for bone-marrow transplant. The previous procedure lacked flexibility to accommodate various requests from the anesthesia team due to the wide range of patient sizes. To address this issue and to improve the process overall, we updated our procedure for TBI simulation, dosimetry planning, patient setup during treatment, and in vivo dosimetry. A simulation form was redesigned with additional detailed instructions and documentation requirements. The dose calculation procedure was reformulated to remove dependence on setup variations. Tissue compensation determination and therefore dose uniformity were improved by introducing rigorous calculation methods. Calculations were performed on 28 previously-treated patients to compare the dose uniformity using the new versus previous methods. Results: The new procedures improve interdepartmental communication, simplify the workflow, decrease the risk of treating patients in a setup that differs from that used during the simulation, and reduce dose heterogeneity. The new compensator design significantly improved patient dose uniformity: 0.8% ± 0.4% (new method) vs. 4.2% ± 2.3% (previous method) (p Conclusion: A near-miss incident reporting system was used to improve the safety and quality of pediatric TBI procedures under anesthesia. 展开更多
关键词 Pediatric Total Body irradiation Simulation DOSIMETRY Treatment Setup Continuous Safety Improvement (CSI)
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g-C3N4/Ag/GO Composite Photocatalyst with Efficient Photocatalytic Performance: Synthesis, Characterization, Kinetic Studies, Toxicity Assessment and Degradation Mechanism 被引量:4
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作者 LI Guo-Min WANG Bing WANG Rui 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2020年第9期1675-1688,1556,共15页
The g-C3N4/Ag/GO(CNAG)photocatalysts were synthesized by a facile two-step reaction route.The as-prepared CNAG samples were characterized by X-ray diffraction(XRD),Fourier transform-infrared spectroscopy(FTIR),X-ray p... The g-C3N4/Ag/GO(CNAG)photocatalysts were synthesized by a facile two-step reaction route.The as-prepared CNAG samples were characterized by X-ray diffraction(XRD),Fourier transform-infrared spectroscopy(FTIR),X-ray photoelectron spectroscopy(XPS),photoluminescence spectroscopy(PL)and ultraviolet-visible diffuse reflectance spectroscopy techniques(UV-vis DRS).The photocatalytic activity was obtained by degrading rhodamine B(RhB)under simulated sunlight and the results showed that photocatalytic activity of CNAG was much higher than that of pure g-C3N4 and g-C3N4/Ag.When the mass ratio of GO was 6%,the as-prepared CNAG-6%sample possessed the highest photocatalytic activity and the kinetic constant of RhB degradation was 0.077 min-1,which was almost 4.3 times higher than that of pure g-C3N4(0.018 min-1)and 2.5 times higher than that of the g-C3N4/Ag(0.031 min-1)composite,respectively.The toxicity of CNAG samples was assessed via seed germination experiment and no significant inhibitory effect was observed.The enhanced photocatalytic activity could be attributed to the synergistic effect of partial surface plasma resonance(SPR)effect of Ag,strong visible light absorption and the high separation efficiency of photon-generated carrier.The CNAG-6%sample exhibited excellent stability during the cycle experiment.Finally,a possible photocatalytic mechanism was proposed. 展开更多
关键词 g-C3N4 g-C3N4/Ag/GO photocatalytic degradation simulated sunlight irradiation toxicity assessment
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Simulation model for electron irradiated IGZO thin film transistors 被引量:2
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作者 G K Dayananda C Shantharama Rai +1 位作者 A Jayarama Hyun Jae Kim 《Journal of Semiconductors》 EI CAS CSCD 2018年第2期17-21,共5页
An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O(IGZO) thin-film transistors is developed. The model is developed based on the s... An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O(IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model. 展开更多
关键词 simulation model IGZO TFT electron irradiation
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