The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in...The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.展开更多
基金Project supported by the Key Project of Natural Science Foundation of China(No.61534005)the National Science Foundation of China(No.61474081)+2 种基金the National Basic Research Program of China(No.2013CB632103)the Natural Science Foundation of Fujian Province(No.2015D020)the Science and Technology Project of Xiamen City(No.3502Z20154091)
文摘The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.
