Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are foun...Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.展开更多
This work was aimed at improving the water-resistance stability of CaS：Eu2＋,Sm2＋ phosphor. An organic-inorganic com- posite coating method was adopted in order to obtain ideal phosphor. The phosphor was coated with...This work was aimed at improving the water-resistance stability of CaS：Eu2＋,Sm2＋ phosphor. An organic-inorganic com- posite coating method was adopted in order to obtain ideal phosphor. The phosphor was coated with SiO2 via sol-gel technique and it was also covered by polymethyl methacrylate （PMMA） via dissolution-cohesion technique. Powder X-ray diffraction （XRD） patterns, fluorescence spectroscopy and transmission electron microscopy （TEM） were employed to characterize the phase structures, emission spectrum and surface morphologies, respectively. In addition, the water-resistance stability of the phosphor was tested by soaking the phosphor into deionized water. The results showed that the phase structures remained the same as the uncoated phosphor and the po- sition of the fluorescence peak did not shift after surface treatment. Results showed that the water-resistance stability of the phosphor was improved to some degree. Moreover, the photoluminescence （PL） intensity of the coated phosphors reduced less than 10% of the original phosphors. Though being soaked into deionized water for 50 h, the phosphor coated with 10 wt.%SiO2-10 wt.%PMMA retained 85.9% PL intensity compared to that of the uncoated phosphor. Therefore, it could be concluded that the 10 wt.%SiO2-10 wt.%PMMA composite coating effectively improved the phosphor water resistance and retained its good optical properties.展开更多
In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO2/SiNx dielectric film reflec...In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO2/SiNx dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO2/SiNx dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface.展开更多
Emerging studies highlight the import-ance of metabolic reprogramming in T cell development and function, although how these processes are regulated remains to be fully understood. Recent advances in dissecting the ro...Emerging studies highlight the import-ance of metabolic reprogramming in T cell development and function, although how these processes are regulated remains to be fully understood. Recent advances in dissecting the roles of Sinl-m T0RC2 signaling in early thymocyte development provide new in sight into the dynamic in terplay between immune signaling and cell metabolism, as well as the crucial role in directi ng thymocyte pro life ration and development.展开更多
The equilibrium geometries, relative stabilities, and electronic properties of Ca2Sin （n = 1-11） clusters have been systematically investigated by using the density function theory at the 6-311G （d） level The opti...The equilibrium geometries, relative stabilities, and electronic properties of Ca2Sin （n = 1-11） clusters have been systematically investigated by using the density function theory at the 6-311G （d） level The optimized geometries indicate that the most stable isomers have three-dimensional structures for n = 3-11. The electronic properties of Ca2 Sin （n = 1-11） dusters axe obtained through the analysis of the natural charge population, natural electron configuration, vertical ionization potential, and vertical electron affinity. The results show that the charges in corresponding Ca2Sin clusters transfer from the Ca atoms to the Sin host. Based on the obtained lowest-energy geometries, the size dependence of cluster properties, such as averaged binding energies, fragmentation energies, second-order energy differences, HOMO- LUMO gaps and chemical hardness, are deeply discussed.展开更多
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2014AA032602the National Natural Science Foundation of China under Grant Nos 61474115 and 61501421
文摘Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.
基金supported by National Natural Science Foundation of China(11305260)
文摘This work was aimed at improving the water-resistance stability of CaS：Eu2＋,Sm2＋ phosphor. An organic-inorganic com- posite coating method was adopted in order to obtain ideal phosphor. The phosphor was coated with SiO2 via sol-gel technique and it was also covered by polymethyl methacrylate （PMMA） via dissolution-cohesion technique. Powder X-ray diffraction （XRD） patterns, fluorescence spectroscopy and transmission electron microscopy （TEM） were employed to characterize the phase structures, emission spectrum and surface morphologies, respectively. In addition, the water-resistance stability of the phosphor was tested by soaking the phosphor into deionized water. The results showed that the phase structures remained the same as the uncoated phosphor and the po- sition of the fluorescence peak did not shift after surface treatment. Results showed that the water-resistance stability of the phosphor was improved to some degree. Moreover, the photoluminescence （PL） intensity of the coated phosphors reduced less than 10% of the original phosphors. Though being soaked into deionized water for 50 h, the phosphor coated with 10 wt.%SiO2-10 wt.%PMMA retained 85.9% PL intensity compared to that of the uncoated phosphor. Therefore, it could be concluded that the 10 wt.%SiO2-10 wt.%PMMA composite coating effectively improved the phosphor water resistance and retained its good optical properties.
基金Supported by the National Basic Research Program of China (Grant No. 2006CB604902)the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality (Grant No. 05002015200504)
文摘In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO2/SiNx dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO2/SiNx dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface.
文摘Emerging studies highlight the import-ance of metabolic reprogramming in T cell development and function, although how these processes are regulated remains to be fully understood. Recent advances in dissecting the roles of Sinl-m T0RC2 signaling in early thymocyte development provide new in sight into the dynamic in terplay between immune signaling and cell metabolism, as well as the crucial role in directi ng thymocyte pro life ration and development.
基金Supported by the National Natural Science Foundation of China under Grant Nos.11304167 and 51374132Postdoctoral Science Foundation of China under Grant No.20110491317Natural Science Foundation of Henan Province under Grant Nos.2011B140015,132300410209,and 132300410290
文摘The equilibrium geometries, relative stabilities, and electronic properties of Ca2Sin （n = 1-11） clusters have been systematically investigated by using the density function theory at the 6-311G （d） level The optimized geometries indicate that the most stable isomers have three-dimensional structures for n = 3-11. The electronic properties of Ca2 Sin （n = 1-11） dusters axe obtained through the analysis of the natural charge population, natural electron configuration, vertical ionization potential, and vertical electron affinity. The results show that the charges in corresponding Ca2Sin clusters transfer from the Ca atoms to the Sin host. Based on the obtained lowest-energy geometries, the size dependence of cluster properties, such as averaged binding energies, fragmentation energies, second-order energy differences, HOMO- LUMO gaps and chemical hardness, are deeply discussed.
