Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Long-Pulse Single-Frequency All-Fiber Amplifier

In this paper, we report a high power long-pulse single-frequency all-fiber amplifier at 1064 nm with near-diffraction-limited beam quality based on a polarization-maintaining tapered Yb-doped fiber (T-YDF). By applying square wave pulse modulation to the diodes, with a frequency of 50 Hz and a pulse width of 668 μs, the peak power of the output laser reached 257 W with an average power of 8.65 W, linewidth of 10.6 kHz and M2 < 1.5. .

A Pulse Width Modulation Scheme With Zero-sequence Voltage Injection for Single Phase Three-level NPC Rectifiers

直流侧中点电位电压偏移是多电平中性点钳位型变流器的主要缺点。以单相三电平NPC整流器为研究对象，以实现直流侧中点电位无漂移为控制目标，以传统的单相三电平单极性载波脉宽调制方法为基础，首先提出一种基于零序电压分量注入的载波脉宽调制算法；然后在此基础上给出基于零序电压分量极限值注入的载波脉宽调制算法；并给出这2种方法的零序电压分量的设计方案；最后，对这2种方法进行了详细的理论分析、计算机仿真和1kW样机实验对比验证。研究结果表明：所提出的2种算法都能有效实现直流侧中点电位平衡控制，其中基于零序电压分量极限值注入的载波调制算法的中点电位控制具有更快动态响应速度，且其网侧电流的高次谐波主要分布在开关频率附近；而基于零序电压分量注入的载波调制算法的网侧电流高次谐波主要分布在2倍开关频率附近。但是在一个调制信号周期内，基于零序电压分量极限值注入的载波调制算法的开关切换次数比基于零序电压分量注入的载波调制算法低25％左右。

Lattice strain induced by trace Pt single atoms in nickel for accelerating industrial hydrogen evolution

Strategically designing the electrocatalytic system and cleverly inducing strain is an effective approach to balance the cost and activity of Pt-based electrocatalysts for industrial-scale hydrogen production.Herein,we present a unipolar pulsed electrodeposition(UPED) strategy to induce strain in the Ni lattice by introducing trace amounts of Pt single atoms(SAs)(0.22 wt%).The overpotential decreased by 183 mV at 10 mA cm^(-2) in 1.0 M KOH after introducing trace amounts of Pt_(SAs).The industrial electrolyzer,assembled with Pt_(SAs)Ni cathode and a commercial NiFeO_(x) anode,requires a cell voltage of 1.90 V to attain 1 A cm^(-2) of current density and remains stable for 280 h,demonstrating significant potential for practical applications.Spherical aberration corrected scanning transmission electron microscopy(AC-STEM),X-ray absorption(XAS),and geometric phase analysis(GPA) indicate that the introduction of trace amounts of Pt SAs induces tensile strain in the Ni lattice,thereby altering the local electronic structure and coordination environment around cubic Ni for enhancing the water decomposition kinetics and fundamentally changing the reaction pathway.The doping-strain strategy showcases conformational relationships that could offer new ideas to construct efficient hydrogen evolution reaction(HER) electrocatalysts for industrial hydrogen production in the future.

Countermeasure against blinding attack for single-photon detectors in quantum key distribution

Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Temporal characteristic analysis of single event effects in pulse width modulator

In this paper,the nature and origin of single event effects(SEE) are studied by injecting laser pulses into different circuit blocks,combining with analysis to map pulse width modulators circuitry in the microchip die.A time-domain error-identification method is used in the temporal characteristic analysis of SEE.SEE signatures of different injection times are compared.More serious SEE are observed when the laser shot occurs on a rising edge of the device output for blocks of the error amplifier,current sense comparator,and T and SR latches.

Optical Pulse Compression Based on High-doped Erbium Fiber Amplifier and Standard Single-mode Fiber

Proposed is a novel optical pulse compression technique based on high-doped erbium fiber amplifier and standard single-mode fiber(SMF). We used the amplifier with the erbium ion concentration of 6.3×10-3 to amplify a hyperbolic secant pulse from a regeneratively mode-locked fiber laser. The central wavelength, pulsewidth and peak power of the pulse are 1 550 nm, 12.5 ps and 3 mW, respectively. Then the amplified pulse with peak power level corresponding to a higher-order soliton is compressed when it propagates through a 3-km-long single-mode fiber. Studied are the compressed pulses under different pump powers and fiber lengths. The results show that it can get a narrower pulse, and solve the difficulty that pulses at low power can not be compressed directly in the fiber. And the construct is compact.

Detection of the spatiotemporal field of a single-shot terahertz pulse based on spectral holography

According to electro-optical sampling theory, we propose a new method to detect the spatiotemporal field of a single- shot terahertz pulse by spectral holography for the first time. The single-shot terahertz pulse is coupled into a broadened chirped femtosecond pulse according to electro-optical sampling theory in the detecting system. Then the reference wave and the signal wave are split by Dammann grating and spread into the interference band-pass filter. The filtered sub-waves are at different central-frequencies because of the different incident angles. These sub-waves at different central-frequencies interfere to form sub-holograms, which are recorded in a single frame of a charge coupled device （CCD）. The sub-holograms are numerically processed, and the spatiotemporal field distribution of the original terahertz pulse is reconstructed. The computer simulations verify the feasibility of the proposed method.

Single-pinhole diffraction of few-cycle isolated attosecond pulses with a two-color field

The spatio-temporal characterization of an isolated attosecond pulse is investigated theoretically in a two-color field. Our results show that a few-cycle isolated attosecond pulse With the center wavelength of 16 nm can be generated effectively by adding a weak controlling field. Using the split and delay units, the isolated attosecond pulse can be split to the two same ones, and then single-pinhole diffractive patterns of the two pulses with different delays can be achieved. The diffractive patterns depend severely on the periods of the attosecond pulses, which can be helpful to obtain temporal information of the coherent sources.

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.

Single-pulse chaotic dynamics of functionally graded materials plate

Single-pulse chaos are studied for a functionally graded materials rectangular plate. By means of the global perturbation method, explicit conditions for the existence of a SiZnikov-type homoclinic orbit are obtained for this sys- tem, which suggests that chaos are likely to take place. Then, numerical simulations are given to test the analytical predic- tions. And from our analysis, when the chaotic motion oc- curs, there are a quasi-period motion in a two-dimensional subspace and chaos in another two-dimensional supplemen- tary subspace.

Association between Gene Polymorphisms and SNP-SNP Interactions of the Matrix Metalloproteinase 2 Signaling Pathway and the Risk of Vascular Senescence

Objective This study aimed to explore the association of single nucleotide polymorphisms(SNP)in the matrix metalloproteinase 2(MMP-2)signaling pathway and the risk of vascular senescence(VS).Methods In this cross-sectional study,between May and November 2022,peripheral venous blood of151 VS patients(case group)and 233 volunteers(control group)were collected.Fourteen SNPs were identified in five genes encoding the components of the MMP-2 signaling pathway,assessed through carotid-femoral pulse wave velocity(cf PWV),and analyzed using multivariate logistic regression.The multigene influence on the risk of VS was assessed using multifactor dimensionality reduction(MDR)and generalized multifactor dimensionality regression(GMDR)modeling.Results Within the multivariate logistic regression models,four SNPs were screened to have significant associations with VS:chemokine(C-C motif)ligand 2(CCL2)rs4586,MMP2 rs14070,MMP2rs7201,and MMP2 rs1053605.Carriers of the T/C genotype of MMP2 rs14070 had a 2.17-fold increased risk of developing VS compared with those of the C/C genotype,and those of the T/T genotype had a19.375-fold increased risk.CCL2 rs4586 and MMP-2 rs14070 exhibited the most significant interactions.Conclusion CCL2 rs4586,MMP-2 rs14070,MMP-2 rs7201,and MMP-2 rs1053605 polymorphisms were significantly associated with the risk of VS.

Single Event Transients of Operational Amplifier and Optocoupler

The single event transient effects of the operational amplifier LM124J and the optocoupler HCPL 5231 are investigated by a pulsed laser test facility. The relation of transient pulse shape to pulsed laser equivalent LET is tested,the sensitive areas of the SET effects are identified in voltage follower application mode of LM124J, and the mechanism is initially analyzed. The transient amplitude and duration of HCPL5231 at various equivalent LET are examined,and the SET cross-section is measured. The results of our test and heavy ion experimental data coincide closely,indicating that a pulsed laser test facility is a valid tool for single event effect evaluation.

Comparison of perceived pain and patients’ satisfaction with traditional local anesthesia and single tooth anesthesia: A randomized clinical trial

BACKGROUND Contemporary innovations in the area of local anesthesia have attempted to provide an absolutely pain free experience for patients.Since the introduction of Computer-Controlled Local Anesthetic Delivery Systems to dentistry,many studies have compared its efficacy and safety to conventional anesthesia.However,very few studies have compared single tooth anesthesia(STA)and traditional local anesthesia.AIM To compare pain rating,changes in blood pressure,and heart rate during the local anesthetic injection.The secondary objectives were to measure the patients’level of satisfaction and the differences in anesthetic efficiency between the STA system and traditional local infiltration.METHODS A randomized controlled trial was conducted and a total of 80 patients with dental restorative needs were enrolled for the study.The patients were evaluated for their general physical status and oral clinical findings before enrollment.Information regarding perceived pain,changes in heart rate and blood pressure,and patients’satisfaction was collected using an electronic data form and was analyzed using paired and unpaired t-tests.RESULTS No significant difference was noted in perceived pain(P=0.59)and systolic blood pressure(P=0.09)during anesthetic injection using both traditional and STA techniques.STA patients had a significantly higher heart rate during anesthesia,although a statistically significant difference was noted among the traditional anesthesia and the STA groups even before anesthesia.During the restorative procedure,less pain was perceived by STA patients on the Wong-Baker FACES pain scale,which was statistically significant(P<0.001).Analyses of post-procedure patient responses showed that STA patients had a significantly better treatment experience and preferred to have the same method of injection in the future(P=0.04).CONCLUSION STA system can provide less painful and more comfortable restorative treatment procedures in comparison to the traditional infiltration technique.

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K

Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.

A 37 mJ,100 Hz,high energy single frequency oscillator

Ways on energy enhancement for single frequency oscillator are reported in this paper.By quantitative analysis on gain and loss coefficients for each cavity mode with inserted etalons,a 37 mJ,100 Hz high energy single-frequency Nd:YAG oscillator is obtained.The pulse energy is promoted by enhancement of nearly 7 times for a single frequency oscillator reported.The result proves that this method does help for energy enhancement.It has attractive potential for high energy single frequency oscillator design,especially on condition of intensive side pumped or long cavity laser,where strong competitors exist and are hard to be suppressed.

Ultra-low power anti-crosstalk collision avoidance light detection and ranging using chaotic pulse position modulation approach

A novel concept of collision avoidance single-photon light detection and ranging（LIDAR） for vehicles has been demonstrated, in which chaotic pulse position modulation is applied on the transmitted laser pulses for robust anti-crosstalk purposes. Besides, single-photon detectors（SPD） and time correlated single photon counting techniques are adapted, to sense the ultra-low power used for the consideration of compact structure and eye safety. Parameters including pulse rate, discrimination threshold, and number of accumulated pulses have been thoroughly analyzed based on the detection requirements, resulting in specified receiver operating characteristics curves. Both simulation and indoor experiments were performed to verify the excellent anti-crosstalk capability of the presented collision avoidance LIDAR despite ultra-low transmitting power.