Stable yellow light emission from lead-free copper halides single crystals for visible light communication

Yellow light-emitting diodes(LEDs) as soft light have attracted abundant attention in lithography room, museum and art gallery. However, the development of efficient yellow LEDs lags behind green and blue LEDs, and the available perovskites yellow LEDs suffer from the instability. Herein, a pressure-assisted cooling method is proposed to grow lead-free CsCu2I3single crystals, which possess uniform surface morphology and enhanced photoluminescence quantum yield(PLQY) stability, with only 10% PLQY losses after being stored in air after 5000 h.Then, the single crystals used for yellow LEDs without encapsulation exhibit a decent Correlated Color Temperature(CCT) of 4290 K, a Commission Internationale de l’Eclairage(CIE) coordinate of(0.38, 0.41), and an excellent 570-h operating stability under heating temperature of 100°C. Finally, the yellow LEDs facilitate the application in wireless visible light communication(VLC), which show a-3 dB bandwidth of 21.5 MHz and a high achievable data rate of 219.2 Mbps by using orthogonal frequency division multiplexing(OFDM) modulation with adaptive bit loading. The present work not only promotes the development of lead-free single crystals, but also inspires the potential of CsCu2I3in the field of yellow illumination and wireless VLC.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Understand anisotropy dependence of damage evolution and material removal during nanoscratch of MgF_(2) single crystals

To understand the anisotropy dependence of the damage evolution and material removal during the machining process of MgF_(2) single crystals,nanoscratch tests of MgF_(2) single crystals with different crystal planes and directions were systematically performed,and surface morphologies of the scratched grooves under different conditions were analyzed.The experimental results indicated that anisotropy considerably affected the damage evolution in the machining process of MgF_(2) single crystals.A stress field model induced by the scratch was developed by considering the anisotropy,which indicated that during the loading process,median cracks induced by the tensile stress initiated and propagated at the front of the indenter.Lateral cracks induced by tensile stress initiated and propagated on the subsurface during the unloading process.In addition,surface radial cracks induced by the tensile stress were easily generated during the unloading process.The stress change led to the deflection of the propagation direction of lateral cracks.Therefore,the lateral cracks propagated to the workpiece surface,resulting in brittle removal in the form of chunk chips.The plastic deformation parameter indicated that the more the slip systems were activated,the more easily the plastic deformation occurred.The cleavage fracture parameter indicated that the cracks propagated along the activated cleavage planes,and the brittle chunk removal was owing to the subsurface cleavage cracks propagating to the crystal surface.Under the same processing parameters,the scratch of the(001)crystal plane along the[100]crystal-orientation was found to be the most conducive to achieving plastic machining of MgF_(2) single crystals.The theoretical results agreed well with the experimental results,which will not only enhance the understanding of the anisotropy dependence of the damage evolution and removal process during the machining of MgF_(2) crystals,but also provide a theoretical foundation for achieving the high-efficiency and low-damage processing of anisotropic single crystals.

MORPHOLOGY EVOLUTION IN PTFE AS A FUNCTION OF MELT TIME AND TEMPERATURE——Ⅰ.HIGH MOLECULAR WEIGHT SINGLE-AND MULTI-MOLECULE FOLDED CHAIN SINGLE CRYSTALS AND BAND STRUCTURES

The effect of sintering dispersed dispersion and nano-emulsion particles of high molecular weightpolytetrafluoroethylene(PTFE)on a substrate as a function of“melt”time and temperature is described.Folded chain singlecrystals parallel to the substrate and as ribbons on-edge(with double striations),as well as bands,are produced for longersintering times;particle merger and diffusion of individual molecules,crystallizing as folded chain,single(or few)molecule,single crystals when“trapped”on the substrate by cooling occur for shorter sintering times.It is suggested the observedstructures develop with sintering time,in a mesomorphic melt.The structure of the nascent particles is also discussed.

RAFTING PREDICTION CRITERION FOR NICKEL-BASE SINGLE CRYSTALS UNDER MULTIAXIAL STRESSES AND CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF CREEP BEHAVIOR

Based on the relief of interfacial energy density by dislocation generation at the gamma - gamma ' interfaces, a rafting prediction criterion has been developed for nickel-base single crystals under multiaxial stresses. The diagrams of rafting have been presented, and confirmed by experimental results. The rafting process have been analyzed quantitatively by the relief of interfacial energy. The criterion has been applied to study the creep behavior. The example of creep life analysis shows that the criterion can be correlated greatly to the crystallographic orientation dependence of creep behavior. (Author abstract) 11 Refs.

Interplay between polarization rotation and crack propagation in PMN-PT relaxor single crystals

Investigations on the interconnection between the polarization rotation and crack propagation are performed for [110J-oriented 74Pb（Mg1/3Nb2/3）O3- 26PbTiO3 relaxor ferroelectric single crystal under electric loadings along [001] direction. The crystal is of predominantly monoclinic MA phase with scatter dis- tributed rhombohedral （R） phase under a moderate poling field of 900 V/mm in [00l] direction. With magnitude of 800 V/ram, a through thickness crack is initi- ated near the electrode by electric cycling. Static electric loadings is then imposed to the single crystal. As the applied static electric field increases, domain switch- ing in the monoclinic MA phase and phase transition from MA to R phase occur near the crack. The results indicate that the crack features a conducting one. Whether domain switching or phase transition occurs depends on the intensity of the electric field component that is perpendicular to the applied electric field.

Influence of Isothermal Treatment on Superelastic Behavior of Cu-13.8Al-4.0Ni(mass fraction) Single Crystals

The superelastic behaviors of different isothermal treated Cu-13.SAl-4.ONi (mass fraction) single crystals were studied by applying tensile stress along <001> of the d phase. The different isothermal specimens have different superelastic behavior due to the change of the ratio of stress-induced r1 and β1. The superelasticity of r1 phase tends to that of g; phase with cycling. Typical stabilization of stress-induced martensite above Ap results in residual deformation. Due to the reverse transformation of 7I, there is a deviation of pseudo-yield stress from linear relation with temperature at relatively low stress.

Super deformability and thermoelectricity of bulkγ-InSe single crystals

Indium selenide,aⅢ–Ⅴgroup semiconductor with layered structure,attracts intense attention in various photoelectric applications,due to its outstanding properties.Here,we report super deformability and thermoelectricity ofγ-In Se single crystals grown by modified Bridgeman method.The crystal structure of In Se is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy.The predominate phase ofγ-In Se with dense stacking faults and local multiphases is directly demonstrated at atomic scale.The bulkγ-In Se crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding12.5%and 264%extension by rolling.At the meantime,In Se also possesses graphite-like features which is printable,writable,and erasable.Finally,the thermoelectric properties ofγ-In Se bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects.These findings will enrich the knowledge of structural and mechanical properties'flexibility of In Se and shed lights on the intrinsic and unique mechanical properties of In Se polytypes.

Synthesis of Single Crystals of Zeolite Betaby Using Two Silica Sources

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Doping Induced Gap Anisotropy in Iron-Based Superconductors:a Point-Contact Andreev Reflection Study of BaFe2-xNixAs2 Single Crystals

We report a systematic investigation on c-axis point-contact Andreev reflection （PCAR） in BaFe2-xNixAs2 superconducting single crystals from underdoped to overdoped regions （0.075≤ x ≤0.15）. At low temperatures, an in-gap sharp peak at low-bias voltage is observed in PCAR for overdoped samples, in contrast to the case of underdoped junctions, in which an in-gap plateau is observed. The variety of the conductance spectra with doping can be well described by using a generalized Blonder-Tinkham-Klapwijk formalism with an angle-dependent gap. This gap shows a clear crossover from a nodeless in the underdoped side to a nodal feature in the overdoped region. This result provides evidence of the doping-induced evolution of the superconducting order parameter when the inter-pocket and intra-pocket scattering are tuned through doping, as expected in the s± scenario.

Fracture Mechanics,Crack Propagation and Microhardness Studies on Flux Grown ErAlO_3 Single Crystals

Results on fracture mechanics and crack propagation have been obtained, making use of Vickers microhardness studies on two different crystallographic planes [(110) and (001)] of flux grown erbium aluminate crystals in the load ranging from 10-100 g. The variation of microhardness with load which is best explained by Hays and Kendall's law leads to the load independent values of hardness. Classification of cracks is dealt with and it is reported that the transition from Palmqvist to median types of cracks occurs at higher loads. The values of fracture toughness (K_C), and brittleness index (B_i) are calculated using median types of cracks.

Superconductivity in Undoped CaFe_2As_2 Single Crystals

Single crystals of undoped CaFe2As2 are grown by an FeAs self-flux method, and the crystals are quenched in ice-water rapidly after high-temperature growth. The quenched crystal undergoes a collapsed tetragonal structural phase transition around 80 K revealed by the temperature-dependent x-ray diffraction measurements. Superconductivity below 25 K is observed in the collapsed phase by resistivity and magnetization measurements. The isothermal magnetization curve measured at 2 K indicates that this is a typical type-ll superconductor. For comparison, we systematically characterize the properties of the furnace-cooled, quenched, and post-annealed single crystals, and find strong internal crystallographic strain existing in the quenched samples, which is the key for the occurrence of superconductivity in the undoped CaFe2As2 single crystals.

MORPHOLOGY EVOLUTION IN PTFE AS A FUNCTION OF MELT TIME AND TEMPERATURE——Ⅱ.LOW MOLECULAR WEIGHT FOLDED CHAIN SINGLE CRYSTALS AND BAND STRUCTURES

The effect of sintering dispersed and bulk,low molecular weight(M_n=50,000 Da),nano-emulsionpolytetrafluoroethylene(PTFE)particles near their melting point is described.With the nascent particles consisting of ca.75 nm diameter,hexagonal,single crystals,sintering at,e.g.,350℃,results,initially,in merger of neighboring particles,followed by individual molecular motion on the substrate and the formation of folded chain,lamellar single crystals andspherulites,and on-edge ribbons.It is suggested these structures develop,with time,in the mesomorphic“melt”.Sintering ofthe bulk resin yields extended chain,band structures,as well as folded chain lamellae;end-surface to end-surface merger,possibly by end-to-end polymerization,occurs with increasing time.

A Reproducible Approach of Preparing High-Quality Overdoped Bi_2Sr_2CaCu_2O_(8+δ) Single Crystals by Oxygen Annealing and Quenching Method

We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.

Magnetic properties of oxides and silicon single crystals

The magnetic properties of single crystals Si,Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3)were investigated systematically.Three origins of the magnetizations of these crystals,namely,an intrinsic diamagnetic,a paramagnetic,and a ferromagnetic contribution,have been found to influence the magnetic signals measured on the crystals,in some important application scenarios such crystals being served as substrates with the magnetic thin film epitaxially grown on.Quantitative analyses methodologies were developed and thorough investigations were performed on the crystals with the intrinsic materials parameters thus revealed,especially that the intrinsic diamagnetic susceptibility differential dχdia/d T were identified quantitatively for the first time in Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3).The paramagnetic contribution is found to be the key in terms of the magnetic properties of the crystals,which in turn is in fact a consequence of the 3d impurities doping inside the crystal.All the intrinsic materials parameters are given in this paper as datasets,the datasets are openly available at https://www.doi.org/10.57760/sciencedb.j00113.00028.

Preparation of Single Crystals of Co_xZn_(1-x)S and Co_xZn_(1-x)Se—New Materials of Dilute Magnetic Semiconductors

In this paper, we report the growth of single crystals of Co_x Zn_(1-x)S and Co_x Zn_(1-x)Se (0<x<0.3) by the method of chemical transport, using iodine as a transport agent. The light green color of single crystal Co_xZn_(1-x)S as well as the light brown color of Co_xZn_(1-x)Se become deep with an increase in x. The compositions of the single crystals were nearly stoichiometric. The transfer rate decreases with an increase of the x value. The growth rate was related to the temperature difference. The large temperature difference speed up the growth rate, but the size of crystal obtained was small. In general, the optimal temperature difference was 15℃. From X-ray diffraction measurements, the structures of crystals Co_xZn_(1-x)S and Co_xZn_(1-x)Se (0<x<0.1) were identified to be zinc blende structure similar to that of ZnS and ZnSe.

Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals

As one of important members of refractory materials,tungsten phosphide(WP)holds great potential for fundamental study and industrial applications in many fields of science and technology,due to its excellent properties such as superconductivity and as-predicted topological band structure.However,synthesis of high-quality WP crystals is still a challenge by using tradition synthetic methods,because the synthesis temperature for growing its large crystals is very stringently required to be as high as 3000℃,which is far beyond the temperature capability of most laboratory-based devices for crystal growth.In addition,high temperature often induces the decomposition of metal phosphides,leading to off-stoichiometric samples based on which the materials'intrinsic properties cannot be explored.In this work,we report a high-pressure synthesis of single-crystal WP through a direct crystallization from cooling the congruent W-P melts at 5 GPa and^3200℃.In combination of x-ray diffraction,electron microscope,and thermal analysis,the crystal structure,morphology,and stability of recovered sample are well investigated.The final product is phase-pure and nearly stoichiometric WP in a single-crystal form with a large grain size,in excess of one millimeter,thus making it feasible to implement most experimental measurements,especially,for the case where a large crystal is required.Success in synthesis of high-quality WP crystals at high pressure can offer great opportunities for determining their intrinsic properties and also making more efforts to study the family of transition-metal phosphides.

Synthesis and study the influence of yttrium doping on band structure,optical,non-linear optical and dielectric results for Ca_(12)Al_(14)O_(33) (C12A7) single crystals grown using traveling-solvent floating zone (TSFZ) method

Ca_(12)Al_(14)O_(33)(C12A7)and Y_(0.02)Ca_(11.98)Al_(14)O_(33)(Y-C12A7)single crystals were grown by using the traveling-solvent floating zone(TSFZ)method.The temperature was increased to avoid the bubbles and cracks which may be formed during the preparation of the ingot material.We have started with the flux higher than the normal to avoid the bubbles and make good treatment for the solid-liquid interface.The structures of both Ca_(12)Al_(14)O_(33)(C12A7)and Y_(0.02)Ca_(11.98)Al_(14)O_(33)(Y-C12A7)were studied by using x-ray diffraction(XRD).Optical properties for C12A7 and Y-C12A7 single crystals have been studied in order to determine the optical parameters such as optical energy gap(Eg),refractive index n,oscillating energy(Eo),dispersion energy(Ed),volume energy loss function(VELF),and surface energy loss function(SELF).Finally,a new result for these samples is that the third-order nonlinear optical susceptibility(χ(3))was determined.The results have been discussed with effect of Y-doping on the C12A7 single crystals for optical and industrial applications.

Microprecipitates in Semi-Insulating GaAs Single Crystals

The microprecipitates in the as-grown undoped and In-doped semi-insulating GaAs single crystals have been ex- amined by JEM 200 CX transmission electron microscope.The microprecipitates consist of GaAs polycrystalline grains of 5～100nm in size have been evidenced in dislocated crystals.Energy dispersive X-ray analysis shows that the mieropreeipitates are predominately arsenic-rich GaAs.The As/Ga atomic ratio of the microprecipitates in In-doped crystal is higher than that of undoped crystal.It is suggested that the formation of the microprecipitates may be induced by the local fluctuation of compositional undercooling during crystal growth.

Preparation and Gas-sensing Characteristics of Na^+-doped ZnO Single Crystals

ZnO single crystals were grown by vapor phase reaction of Zno powder with active carbon powdei at an elevated temperature The typical crystals were colorless and transparent with maximum size o4 0.1 mm in diameter and 25 mm in length, The gas-sensing characteristics of Na+-doped anc undoped single crystals were investigated in 1 %H2. Co and CH, in air between 1 50 and 600℃. It was found that the undoped ZnO single crystals showed little gas sensitivity in air. and Na+-doping can greatly enhance the senstivity by increasing the resistivities. The maximum sensitivity of the samples is 22 (Ra/ Rg) for H2. 1 2 for CO and 4 for CH4