Fault tolerant control of electric pitch control system based on single current detection

In view of the current sensors failure in electric pitch system,a variable universe fuzzy fault tolerant control method of electric pitch control system based on single current detection is proposed.When there is single or two-current sensor fault occurs,based on the proposed method the missing current information can be reconstructed by using direct current（DC）bus current sensor and the three-phase current can be updated in time within any two adjacent sampling periods,so as to ensure stability of the closed-loop system.And then the switchover and fault tolerant control of fault current sensor would be accomplished by fault diagnosis method based on adaptive threshold judgment.For the reconstructed signal error caused by the modulation method and the main control target of electric pitch system,a variable universe fuzzy control method is used in the speed loop,which can improve the anti-disturbance ability to load variation,and the robustness of fault tolerance system.The results show that the fault tolerant control method makes the variable pitch control system still has ideal control characteristics in case of sensor failure although part of the system performance is lost,thus the correctness of the proposed method is verified.

Magnesium permeation through mechanosensitive channels:single-current measurements

Compelling evidence shows that intracellular free magnesium [Mg^2＋]i may be a critical regulator of cell activity in eukaryotes. However, membrane transport mechanisms mediating Mg^2＋ influx in mammalian cells are poorly understood. Here, we show that mechanosensitive （MS） cationic channels activated by stretch are permeable for Mg^2＋ ions at different extracellular concentrations including physiological ones. Single-channel currents were recorded from cell-attached and inside-out patches on K562 leukaemia cells at various concentrations of MgCl2 when Mg^2＋ was the only available carrier of inward currents. At 2 mM Mg^2＋, inward mechanogated currents representing Mg^2＋ influx through MS channels corresponded to the unitary conductance of about 5 pS. At higher Mg^2＋ levels, only slight increase of single-channel currents and conductance occurred, implying that Mg^2＋ permeation through MS channels is characterized by strong saturation. At 20 and 90 mM Mg^2＋, mean conductance values for inward currents carried by Mg^2＋ were rather similar, being equal to 6.8 ± 0.5 and 6.4 ± 0.5 pS, respectively. The estimation of the channel-selective permeability according to constant field equation is obviously limited due to saturation effects. We conclude that the detection of single currents is the main evidence for Mg^2＋ permeation through membrane channels activated by stretch. Our single-current measurements document Mg^2＋ influx through MS channels in the plasma membrane of leukaemia cells.

Phonon-Assisted Spin Current in Single Molecular Magnet Junctions

Owing to the bistable character of the single molecular magnet （SMM）, it can generate 100% spin-polarized currents even connected with normal （N） leads. In this work, we study the phonon-assisted spin current in N- SMM-N systems. We mainly focus on the interplay of SMM＇s bistable character and electron-phonon coupling. It is found that when SMM is trapped in one of the lowest bistable states, it can generate phonon-assisted spin- polarized currents. At the up-spin transport channel, it is accompanied by a phonon-assisted up-spin current, while at the down-spin transport channel, it is accompanied by a phonon-assisted down-spin current.

Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes

A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.