Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using h...Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.展开更多
We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo sim...We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE cross-sections.PRESTAGE is based on the particle transport toolkit Geant4.It adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in Lanzhou.The AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE orbit.Calculation results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/day.Worst-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate.展开更多
In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electro...In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.展开更多
Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results s...Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results show that the ECC did improve the performance dramatically,with the SEU cross sections of SRAMs with ECC being at the order of 10^(-11) cm^2/bit,two orders of magnitude higher than that without ECC(at the order of 10^(-9) cm^2/bit).Also,ineffectiveness of ECC module,including 1-,2- and 3-bits errors in single word(not Multiple Bit Upsets),was detected.The ECC modules in SRAMs utilizing(12,8) Hamming code would lose work when 2-bits upset accumulates in one codeword.Finally,the probabilities of failure modes involving 1-,2- and 3-bits errors,were calcaulated at 39.39%,37.88%and 22.73%,respectively,which agree well with the experimental results.展开更多
Technology scaling results in the propagation-induced pulse broadening and quenching（PIPBQ） effect become more noticeable.In order to effectively evaluate the soft error rate for combinational logic circuits,a soft ...Technology scaling results in the propagation-induced pulse broadening and quenching（PIPBQ） effect become more noticeable.In order to effectively evaluate the soft error rate for combinational logic circuits,a soft error rate analysis approach considering the PIPBQ effect is proposed.As different original pulse propagating through logic gate cells,pulse broadening and quenching are measured by HSPICE.After that,electrical effect look-up tables（EELUTs） for logic gate cells are created to evaluate the PIPBQ effect.Sensitized paths are accurately retrieved by the proposed re-convergence aware sensitized path search algorithm.Further,by propagating pulses on these paths to simulate fault injection,the PIPBQ effect on these paths can be quantified by EELUTs.As a result,the soft error rate of circuits can be effectively computed by the proposed technique.Simulation results verify the soft error rate improvement comparing with the PIPBQ-not-aware method.展开更多
太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对...太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对该问题,提出了一种从器件高层行为模型注入单粒子翻转故障的方法,并基于8051 IP核进行了单粒子一位翻转和连续两位翻转的仿真和实验比较。研究结果表明,单粒子翻转故障可直接注入到器件的高层来评估系统的抗单粒子性能。展开更多
基金supported by the National Natural Science Foundation of China(Nos.11690041,11805244,and 11675233)the Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory(No.ZHD 201604)
文摘Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.
基金supported by the National Natural Science Foundation of China(Nos.11179003,10975164,10805062,and 11005134)
文摘We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE cross-sections.PRESTAGE is based on the particle transport toolkit Geant4.It adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in Lanzhou.The AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE orbit.Calculation results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/day.Worst-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate.
基金supported by the National Natural Science Foundation of China(Grant No.11505033)the Science and Technology Research Project of Guangdong Province,China(Grant Nos.2015B090901048 and 2017B090901068)the Science and Technology Plan Project of Guangzhou,China(Grant No.201707010186)
文摘In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.
基金Supported by the National Natural Science Foundation of China(Nos.11079045 and 11179003)the Important Direction Project of the CAS Knowledge Innovation Program(No.KJCX2-YW-N27)
文摘Single event upsets(SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code(ECC) utilizing Hamming Code.The results show that the ECC did improve the performance dramatically,with the SEU cross sections of SRAMs with ECC being at the order of 10^(-11) cm^2/bit,two orders of magnitude higher than that without ECC(at the order of 10^(-9) cm^2/bit).Also,ineffectiveness of ECC module,including 1-,2- and 3-bits errors in single word(not Multiple Bit Upsets),was detected.The ECC modules in SRAMs utilizing(12,8) Hamming code would lose work when 2-bits upset accumulates in one codeword.Finally,the probabilities of failure modes involving 1-,2- and 3-bits errors,were calcaulated at 39.39%,37.88%and 22.73%,respectively,which agree well with the experimental results.
基金supported by the National Natural Science Foundation of China under Grant No.61274036No.61106038+1 种基金No.61371025and No.61474036
文摘Technology scaling results in the propagation-induced pulse broadening and quenching（PIPBQ） effect become more noticeable.In order to effectively evaluate the soft error rate for combinational logic circuits,a soft error rate analysis approach considering the PIPBQ effect is proposed.As different original pulse propagating through logic gate cells,pulse broadening and quenching are measured by HSPICE.After that,electrical effect look-up tables（EELUTs） for logic gate cells are created to evaluate the PIPBQ effect.Sensitized paths are accurately retrieved by the proposed re-convergence aware sensitized path search algorithm.Further,by propagating pulses on these paths to simulate fault injection,the PIPBQ effect on these paths can be quantified by EELUTs.As a result,the soft error rate of circuits can be effectively computed by the proposed technique.Simulation results verify the soft error rate improvement comparing with the PIPBQ-not-aware method.
文摘太空中的单粒子效应会对电子器件造成损伤,地面模拟是评估器件抗辐射性能的有效途径。现有的模拟方法大多是基于器件的物理底层模型进行电流源脉冲故障注入,不适用于百万门级大规模集成电路(very large scale integration,VLSI)。针对该问题,提出了一种从器件高层行为模型注入单粒子翻转故障的方法,并基于8051 IP核进行了单粒子一位翻转和连续两位翻转的仿真和实验比较。研究结果表明,单粒子翻转故障可直接注入到器件的高层来评估系统的抗单粒子性能。
