The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a F...The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.展开更多
基金Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.11032010)the National Natural Science Foundationof China(Grant Nos.51072171,61274107,61176093,and 11275163)+6 种基金the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1080)the 973 Program,China(Grant No.2012CB326404)the Key Project of Natural Science Foundation of Hunan Province,China(Grant No.13JJ2023)the Key Project of Scientific Research Fund of Education Department of Hunan Province,China(Grant No.12A129)the Innovation Foundation of Hunan Province of China for Postgraduate,China(Grant No.CX2013B261)the Doctoral Program of Higher Education of China(GrantNo.20104301110001)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.
