This paper proposes a latch that can mitigate SEUs via an error detection circuit.The error detection circuit is hardened by a C-element and a stacked PMOS.In the hold state,a particle strikes the latch or the error d...This paper proposes a latch that can mitigate SEUs via an error detection circuit.The error detection circuit is hardened by a C-element and a stacked PMOS.In the hold state,a particle strikes the latch or the error detection circuit may cause a fault logic state of the circuit.The error detection circuit can detect the upset node in the latch and the fault output will be corrected.The upset node in the error detection circuit can be corrected by the C-element.The power dissipation and propagation delay of the proposed latch are analyzed by HSPICE simulations.The proposed latch consumes about 77.5%less energy and 33.1%less propagation delay than the triple modular redundancy（TMR）latch.Simulation results demonstrate that the proposed latch can mitigate SEU effectively.展开更多
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event ups...A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.展开更多
随着ULSI工艺步入深亚微米时代,处理器内部组合逻辑的瞬时故障敏感性迅速提高,文中在设计初期将硬件寄存器纠检错能力和系统软件检错能力纳入考虑,兼顾处理器内组合逻辑、时序逻辑两类部件,设计应用级"低代价锁步EDDI(Error Detect...随着ULSI工艺步入深亚微米时代,处理器内部组合逻辑的瞬时故障敏感性迅速提高,文中在设计初期将硬件寄存器纠检错能力和系统软件检错能力纳入考虑,兼顾处理器内组合逻辑、时序逻辑两类部件,设计应用级"低代价锁步EDDI(Error Detection by Duplicated Instructions)"机制.创新如下:(1)提出基于概率论的故障漏检率量化估计方法,为纠检错与性能折中进行指导.以往的应用级检错机制在设计过程中并没有考虑到下层操作系统的检错能力,这会造成可靠性估计不足而带来性能损失.文中依照指令流经的部件将故障划分为不同子类,并将操作系统纳入考虑,提出基于概率论的故障漏检率量化估计方法,理论估计与故障注入结果拟合良好.(2)低代价锁步EDDI机制,结合硬件纠检错能力,兼顾处理器内组合逻辑和时序逻辑两类部件,大幅降低了性能代价.提出独特的低代价锁步指令复制规则,并通过编译链前端的寄存器分配,大幅减少了寄存器预留数,有效缓解了寄存器压力,降低了访存代价,提高了寄存器的性能.寄存器预留也保证了本机制无需修改编译器传参规则,无需重新编译系统库,提高了通用性.(3)采用单比特故障模型,基于SPARC体系结构,选取处理器中代表性部件:解码(DecoderUnit)单元、地址生成(Address GEN Unit)单元、算逻单元(ALU)进行故障注入,对低代价锁步EDDI实现代价进行详细评测.与全复制EDDI相比,低代价锁步EDDI仅以故障漏检率SDC(Silent Data Corruption)平均升高0.8%的代价,换取了动态执行指令数平均减少36.1%,执行时间平均降低35.2%的性能优势.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61404001,61306046)the Anhui Province University Natural Science Research Major Project(No.KJ2014ZD12)+1 种基金the Huainan Science and Technology Program(No.2013A4011)the National Natural Science Foundation of China(No.61371025)
文摘This paper proposes a latch that can mitigate SEUs via an error detection circuit.The error detection circuit is hardened by a C-element and a stacked PMOS.In the hold state,a particle strikes the latch or the error detection circuit may cause a fault logic state of the circuit.The error detection circuit can detect the upset node in the latch and the fault output will be corrected.The upset node in the error detection circuit can be corrected by the C-element.The power dissipation and propagation delay of the proposed latch are analyzed by HSPICE simulations.The proposed latch consumes about 77.5%less energy and 33.1%less propagation delay than the triple modular redundancy（TMR）latch.Simulation results demonstrate that the proposed latch can mitigate SEU effectively.
基金the National Natural Science Foundation of China(Nos.12035019,11690041,and 11805244).
文摘A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.
文摘随着ULSI工艺步入深亚微米时代,处理器内部组合逻辑的瞬时故障敏感性迅速提高,文中在设计初期将硬件寄存器纠检错能力和系统软件检错能力纳入考虑,兼顾处理器内组合逻辑、时序逻辑两类部件,设计应用级"低代价锁步EDDI(Error Detection by Duplicated Instructions)"机制.创新如下:(1)提出基于概率论的故障漏检率量化估计方法,为纠检错与性能折中进行指导.以往的应用级检错机制在设计过程中并没有考虑到下层操作系统的检错能力,这会造成可靠性估计不足而带来性能损失.文中依照指令流经的部件将故障划分为不同子类,并将操作系统纳入考虑,提出基于概率论的故障漏检率量化估计方法,理论估计与故障注入结果拟合良好.(2)低代价锁步EDDI机制,结合硬件纠检错能力,兼顾处理器内组合逻辑和时序逻辑两类部件,大幅降低了性能代价.提出独特的低代价锁步指令复制规则,并通过编译链前端的寄存器分配,大幅减少了寄存器预留数,有效缓解了寄存器压力,降低了访存代价,提高了寄存器的性能.寄存器预留也保证了本机制无需修改编译器传参规则,无需重新编译系统库,提高了通用性.(3)采用单比特故障模型,基于SPARC体系结构,选取处理器中代表性部件:解码(DecoderUnit)单元、地址生成(Address GEN Unit)单元、算逻单元(ALU)进行故障注入,对低代价锁步EDDI实现代价进行详细评测.与全复制EDDI相比,低代价锁步EDDI仅以故障漏检率SDC(Silent Data Corruption)平均升高0.8%的代价,换取了动态执行指令数平均减少36.1%,执行时间平均降低35.2%的性能优势.
