Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different wave...Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.展开更多
In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave- length detuning in a single mode Fabry-P6rot laser diode （SMFP-LD）. Results show that the bistabili...In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave- length detuning in a single mode Fabry-P6rot laser diode （SMFP-LD）. Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops： counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hys- teresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from -7 dBm to -5 dBm.展开更多
We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an...We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61474111the National Basic Research Program of China under Grant No 2013AA014202
文摘Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.
基金supported by the National Natural Science Foundation of China(Grant No.61205111)the Open Foundation of State Key Laboratory of Millimeter Waves,China(Grant No.K201219)the Natural Science Foundation of Chongqing Normal University,China(Grant No.2011XLZ06)
文摘In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave- length detuning in a single mode Fabry-P6rot laser diode （SMFP-LD）. Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops： counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hys- teresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from -7 dBm to -5 dBm.
文摘We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.
