Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi...Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.展开更多
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigate...Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.展开更多
提出一种新颖的单粒子效应加固输入接口电路,采用组合逻辑延迟后运算处理的方案。该电路基于华润上华600 V BCD 0.8μm工艺进行电路设计和流片,并在中科院国家空间科学中心完成单粒子辐照测试。仿真测试结果表明,提出的输入接口电路可...提出一种新颖的单粒子效应加固输入接口电路,采用组合逻辑延迟后运算处理的方案。该电路基于华润上华600 V BCD 0.8μm工艺进行电路设计和流片,并在中科院国家空间科学中心完成单粒子辐照测试。仿真测试结果表明,提出的输入接口电路可以有效免疫线性能量传递值(LET)在80 MeV·cm2/mg以下单粒子翻转(SEU)事件,特别是对多个节点同时发生单粒子翻转事件的情况,提出的电路抗单粒子翻转可靠性较高。展开更多
This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, differen...This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.展开更多
A 4-interleaving cell of 2-dual interlocked cells（DICE） is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technol...A 4-interleaving cell of 2-dual interlocked cells（DICE） is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology.The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cell of dual DICE encounters are almost 4 larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less compared to the reference traditional DICE cell.展开更多
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004)the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070)
文摘Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)Hunan Provincial Innovation Foundation for Postgraduates,China (Grant No. CX2011B026)
文摘Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
文摘提出一种新颖的单粒子效应加固输入接口电路,采用组合逻辑延迟后运算处理的方案。该电路基于华润上华600 V BCD 0.8μm工艺进行电路设计和流片,并在中科院国家空间科学中心完成单粒子辐照测试。仿真测试结果表明,提出的输入接口电路可以有效免疫线性能量传递值(LET)在80 MeV·cm2/mg以下单粒子翻转(SEU)事件,特别是对多个节点同时发生单粒子翻转事件的情况,提出的电路抗单粒子翻转可靠性较高。
文摘This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.
文摘A 4-interleaving cell of 2-dual interlocked cells（DICE） is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology.The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cell of dual DICE encounters are almost 4 larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less compared to the reference traditional DICE cell.
