Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer

The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.

0.18μm SOI器件技术抗SET设计加固方法

介绍0.18μm SOI器件技术中SET(single event transient)的原理模型及设计加固方法;并结合工艺具体参数,利用TCAD仿真工具进行了模拟仿真。探讨SET在0.18μm SOI器件技术中的微观机理。提出0.18μm SOI工艺SET设计加固方法。重点在于器件和电路级的探讨与加固,尤其是器件物理结构上的SET机理模型及加固设计。

Analysis of a new 5-phase bearingless induction motor

This paper addresses the bearingless motor with a single set of multiphase windings. The interaction between M and M±1 pole-pair magnetic fields produces radial force. Based on this principle,a bearingless machine is obtained. Conventional bearingless machine has dual windings,levitation windings and torque windings,which produce the two magnetic fields. In the proposed bearingless motor,the two needed magnetic fields are produced by feeding two groups of currents to a single set of multiphase windings. Taking a 5-phase induction motor as example,the inductance matrices,considering air gap eccentricity,are calculated with the modified winding function method. The radial force analytical model is deduced by virtual displacement,and its results are validated by FEA. The mathematical model of the new bearingless machine is set up,and the simulation results verified the feasibility of this novel bearingless motor.

MCGDM model using uncertain linguistic consistency sets of single andinterval linguistic term multivalued sets

This paper presents hybrid linguistic expressions and operations for the hybridlinguistic multiple criteria group decision making (MCGDM) issue withidentical and/or different single and interval linguistic term values. First, wepropose a single and interval linguistic term multivalued set/element (SILTMS/SILTME) and develop a consistency measure of SILTMEs based on Shannonentropy to measure the consistency degree of single and interval linguistic termvalues in SILTME. Second, we converse SILTMS/SILTME into an uncertainlinguistic consistency set/element (ULCS/ULCE) in terms of the mean andconsistency measure of SILTMEs to reasonably perform operations betweendifferent information forms/sequence lengths in SILTMSs. Third, we definesome operations of ULCEs and the expected values and sorting rules ofULCEs. Fourth, we present the ULCE weighted mean and geometric operatorsand their characteristics. Finally, we develop a MCGDM model using theweighted mean operation of the two operators and apply it in the mine safetyassessment.

Entropy and Similarity Measure for T2SVNSs and Its Application

The objective of this paper is to present a new approach for solving the multicriteria group decision-making(MCGDM)problems in type-2 single valued neutrosophic set(T2SVNS)environment.Firstly,we give the concepts SVNS,T2SVNS and tangent similarity measure with T2SVN information.Secondly,we define a new entropy function for determining unknown attribute weights.In addition,a MCGDM method is developed based on entropy and tangent similarity measure of T2SVNSs.Finally,an illustrative example and comparative analysis are given to confirm the rationality and feasibility of the proposed method.

Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process

In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channel MOS hardening structures through 3-D TCAD simulations.The results show that this scheme presents about 35% improvements over the unhardened scheme for mitigating the SET pulse,and its upgrade,the 2-fringe scheme,takes on even more than 50% improvements over the unhardened one.This makes significant sense for the semi-conductor device reliability.

Single event transient pulse attenuation effect in three-transistor inverter chain

In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure (or similar layout structures) will be a better method in integrated circuits (ICs) design in radiation environment.

A radiation-hardened-by-design technique for suppressing SET in charge pump of PLL frequency synthesizer

This paper presents a single event transient(SET) suppressor circuit,which can suppress the effect of SET in charge pump(CP) on the whole PLL frequency synthesizers,and at the same time it brings little negative effect to the system during normal operation.Because the proposed SET suppressor circuit only includes a resistor,a PMOS and an NMOS device,little area penalty is introduced.By preventing SET propagating from CP to low pass filter(LPF) and VCO when a single event strikes on CP output node,the system shows excellent hardness to SET in CP.Mixed simulations are performed on TCAD workbench.The results show that a single event with an LET at 80 MeV cm 2 /mg can only induce approximately 2.3 mV disturbance on the control voltage of VCO.

Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor(PMOS) in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been characterized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event transients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semiconductor(CMOS) technologies. Two inverter chains with clever layout structures are explored for the characterization. Ge(linear energy transfer(LET) = 37.4 Me V cm^2/mg) and Ti(LET = 22.2 Me V cm^2/mg) particles are also employed. The experimental results show that with Ge(Ti) exposure, the average pulse reduction is 49 ps(45 ps) in triple-well CMOS technology and 42 ps(32 ps) in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.

Some Generalized Single Valued Neutrosophic Linguistic Operators and Their Application to Multiple Attribute Group Decision Making

This paper proposes a group decision making method based on entropy of neutrosophic linguistic sets and generalized single valued neutrosophic linguistic operators. This method is applied to solve the multiple attribute group decision making problems under single valued neutrosophic liguistic environment, in which the attribute weights are completely unknown. First, the attribute weights are obtained by using the entropy of neutrosophic linguistic sets. Then three generalized single valued neutrosophic linguistic operators are introduced, including the generalized single valued neutrosophic linguistic weighted averaging(GSVNLWA) operator, the generalized single valued neutrosophic linguistic ordered weighted averaging(GSVNLOWA) operator and the generalized single valued neutrosophic linguistic hybrid averaging(GSVNLHA) operator, and the GSVNLWA and GSVNLHA operators are used to aggregate information. Furthermore, similarity measure based on single valued neutrosophic linguistic numbers is defined and used to sort the alternatives and obtain the best alternative. Finally,an illustrative example is given to demonstrate the feasibility and effectiveness of the developed method.

Modeling to predict the time evolution of negative bias temperature instability(NBTI) induced single event transient pulse broadening

An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.

Institutions and accounting standard transformation:Observations from Japan

This paper describes the transformation of Japan's accounting standards over the past 2 decades and the driving forces behind this transformation. It also analyzes the current state of Japan's accounting standards, which are characterized by the dichotomy of accounting systems inherited from the country's political, economic and legal institutions. The discussion in this paper emphasizes that a single set of accounting standards is not always effective for every entity.