Oxidation behavior of 4774DD1 Ni-based single-crystal superalloy at 980℃ in air

The oxidation behavior of a novel Ni-based single-crystal 4774DD1 superalloy for industrial gas turbine applications was investigated by the isothermal oxidation at 980℃ and discontinuous oxidation weight gain methods.The phase constitution and morphology of surface oxides and the characteristics of the crosssection oxide film were analyzed by XRD,SEM and EDS.Results show that the oxidation kinetics of the 4774DD1 superalloy follows the cubic law,indicating its weak oxidation resistance at this temperature.As the oxidation time increases,the composition of the oxide film evolves as following:One layer consisting of a bottom Al_(2)O_(3)sublayer and an upper(Al_(2)O_(3)+NiO)mixture sublayer after oxidized for 25 h.Then,two layers composed of an outermost small NiO discontinuous grain layer and an internal layer for 75 h.This internal layer is consisted of the bottom Al_(2)O_(3)sublayer,an intermediate narrow CrTaO_(4)sublayer,and an upper(Al_(2)O_(3)+NiO)mixture sublayer.Also two layers comprising an outermost relative continuous NiO layer with large grain size and an internal layer as the oxidation time increases to 125 h.This internal layer is composed of the upper(Al_(2)O_(3)+NiO)mixture sublayer,an intermediate continuous(CrTaO_(4)+NiWO_(4))mixture sublayer,and a bottom Al_(2)O_(3)sublayer.Finally,three layers consisting of an outermost(NiAl2O_(4)+NiCr2O_(4))mixture layer,an intermediate(CrTaO_(4)+NiWO_(4))mixture layer,and a bottom Al_(2)O_(3)layer for 200 h.

Design and construction of a film of mesoporous single-crystal rutile TiO_2 rod arrays for photoelectrochemical water oxidation

A film of mesoporous single-crystal rutile TiO2 rod arrays supported on a transparent conductive glass substrate was synthesized with the assistance of a template layer of closely packed silica nanospheres. This film was used as a photoanode and showed significant improvement for photoelectrochemical water oxidation compared with a reference film of nonporous single-crystal rutile TiO2rod arrays.

Single crystal growth and characterization of 166-type magnetic kagome metals

Kagome magnets were predicted to be a good platform to investigate correlated topology band structure,Chern quantum phase,and geometrical frustration due to their unique lattice geometry.Here we reported single crystal growth of 166-type kagome magnetic materials,including HfMn_(6)Sn_(6),ZrMn_(6)Sn_(6),GdMn_(6)Sn_(6)and GdV_(6)Sn_(6),by using the flux method with Sn as the flux.Among them,HfMn_(6)Sn_(6)and ZrMn_(6)Sn_(6)single crystals were grown for the first time.X-ray diffraction measurements reveal that all four samples crystallize in HfFe6Ge6-type hexagonal structure with space group P6/mmm.All samples show metallic behavior from temperature dependence of resistivity measurements,and the dominant carrier is hole,except for GdV6Sn6 which is electron dominated.All samples have magnetic order with different transition temperatures,HfMn_(6)Sn_(6),ZrMn_(6)Sn_(6)and GdV_(6)Sn_(6)are antiferromagnetic with TN of 541 K,466 K and 4 K respectively,while GdMn_(6)Sn_(6)is ferrimagnetic with the critical temperature of about 470 K.This study will enrich the research platform of magnetic kagome materials and help explore the novel quantum phenomena in these interesting materials.The dataset of specific crystal structure parameters for HfMn_(6)Sn_(6)are available in Science Data Bank,with the link.

Purification of copper foils driven by single crystallization

High-purity copper(Cu) with excellent thermal and electrical conductivity, is crucial in modern technological applications, including heat exchangers, integrated circuits, and superconducting magnets. The current purification process is mainly based on the zone/electrolytic refining or anion exchange, however, which excessively relies on specific integrated equipment with ultra-high vacuum or chemical solution environment, and is also bothered by external contaminants and energy consumption. Here we report a simple approach to purify the Cu foils from 99.9%(3N) to 99.99%(4N) by a temperature-gradient thermal annealing technique, accompanied by the kinetic evolution of single crystallization of Cu.The success of purification mainly relies on(i) the segregation of elements with low effective distribution coefficient driven by grain-boundary movements and(ii) the high-temperature evaporation of elements with high saturated vapor pressure.The purified Cu foils display higher flexibility(elongation of 70%) and electrical conductivity(104% IACS) than that of the original commercial rolled Cu foils(elongation of 10%, electrical conductivity of ~ 100% IACS). Our results provide an effective strategy to optimize the as-produced metal medium, and therefore will facilitate the potential applications of Cu foils in precision electronic products and high-frequency printed circuit boards.

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP_(2)

We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP_(2) adopts a monoclinic structure with the cell parameters a=5.7347(10)A,b=5.7804(11)A,and c=5.8222(11)A,space group P2_(1)/c(No.14).The electrical resistivityρ(T)measurements indicate that RhP_(2) exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP_(2) has a high mobilityμ_(e)~210 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_(e)~3.3×10^(18)cm^(3) at 300 K with a narrow-bandgap feature.The high mobilityμ_(e) reaches the maximum of approximately 340 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_^(e)~2×10^(18)cm^(-3)at 100 K.No magnetic phase transitions are observed from the susceptibilityχ(T)and specific heat C_(p)(T)measurements of RhP_(2).Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Multifunctional Film Assembled from N‑Doped Carbon Nanofiber with Co–N_(4)–O Single Atoms for Highly Efficient Electromagnetic Energy Attenuation

Single-atom materials have demonstrated attractive physicochemical characteristics.However,understanding the relationships between the coordination environment of single atoms and their properties at the atomic level remains a considerable challenge.Herein,a facile waterassisted carbonization approach is developed to fabricate well-defined asymmetrically coordinated Co–N_(4)–O sites on biomass-derived carbon nanofiber(Co–N_(4)–O/NCF)for electromagnetic wave(EMW)absorption.In such nanofiber,one atomically dispersed Co site is coordinated with four N atoms in the graphene basal plane and one oxygen atom in the axial direction.In-depth experimental and theoretical studies reveal that the axial Co–O coordination breaks the charge distribution symmetry in the planar porphyrin-like Co–N_(4) structure,leading to significantly enhanced dielectric polarization loss relevant to the planar Co–N_(4) sites.Importantly,the film based on Co–N_(4)–O/NCF exhibits light weight,flexibility,excellent mechanical properties,great thermal insulating feature,and excellent EMW absorption with a reflection loss of−45.82 dB along with an effective absorption bandwidth of 4.8 GHz.The findings of this work offer insight into the relationships between the single-atom coordination environment and the dielectric performance,and the proposed strategy can be extended toward the engineering of asymmetrically coordinated single atoms for various applications.

Analysis of deformation mechanisms in magnesium single crystals using a dedicated four-point bending tester

In this study,we explored the deformation mechanisms of Mg single crystals using a combination of scanning electron microscopy and electron backscattered diffraction in conjunction with a dedicated four-point bending tester.We prepared two single-crystal samples,oriented along the<1120>and<1010>directions,to assess the mechanisms of deformation when the initial basal slip was suppressed.In the<1120>sample,the primary{1012}twin(T1)was confirmed along the<1120>direction of the sample on the compression side with an increase in bending stress.In the<1010>sample,T1 and the secondary twin(T2)were confirmed to be along the<1120>direction,with an orientation of±60°with respect to the bending stress direction,and their direction matched with(0001)in T1 and T2.This result implies that crystallographically,the basal slip occurs readily.In addition,the<1010>sample showed the double twin in T1 on the compression side and the tertiary twin along the<1010>direction on the tension side.These results demonstrated that the maximum bending stress and displacement changed significantly under the bend loading because the deformation mechanisms were different for these single crystals.Therefore,the correlation between bending behavior and twin orientation was determined,which would be helpful for optimizing the bending properties of Mg-based materials.

Synergistic effect of orientation and temperature on slip behavior and precipitation behavior of Al−Cu−Li single crystals

The slip behavior and precipitation behavior of four Al−Cu−Li single crystals with varying orientations at different temperatures were investigated using electron backscattering diffraction(EBSD)and transmission electron microscopy(TEM).The maximum differences in yield strength and ductility of the single crystals at room temperature are 41.6%and 14.7%,respectively.This indicates that the mechanical properties are strongly influenced by the crystal orientation.Moreover,grains with varying orientations exhibit distinct slip characteristics,including slip homogenization,slip localization,and multiple slip.In single crystal SC1,slip localization primarily contributes to its inferior ductility compared to other grains.Nevertheless,during deformation at 250℃,the distinct morphology and distribution of precipitates in the crystals are also correlated with orientation,which causes the increase in the maximum elongation difference to 20.8%in all selected single crystals.Notably,SC1,with a precipitate volume fraction of 2.65%,exhibits more severe slip localization compared to room temperature conditions,while SC2,with a precipitate volume fraction of 4.79%,demonstrates cross-slip characteristics,significantly enhancing the plastic deformation capacity of the Al−Cu−Li alloy.

Localization effect in single crystal of RuAs_(2)

We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs_(2) is a suitable platform to study the localized state.

Mitigating kinetic hindrance of single-crystal Ni-rich cathodes through morphology modulation,nickel reduction,and lithium vacancy generation achieved by terbium doping

Single crystallization has proven to be effective in enhancing the capacity and stability of Ni-rich LiNi_(1-x-y)Co_(x)Mn_(y)O_(2)(SNCM)cathode materials,particularly at high cut-off voltages.Nevertheless,the synthesis of high-quality single-crystal particles remains challenging because of severe particle agglomeration and irregular morphologies.Moreover,the limited kinetics of solid-phase Li^(+)diffusion pose a significant concern because of the extended diffusion path in large single-crystal particles.To address these challenges,we developed a Tb-doped single-crystal LiNi_(0.83)Co_(0.11)Mn_(0.06)O_(2)(SNCM-Tb)cathode material using a straightforward mixed molten salt sintering process.The Tb-doped Ni-rich single crystals presented a quasi-spherical morphology,which is markedly different from those reported in previous studies.Tb^(4+)oping significantly enhanced the dynamic transport of Li^(+)ions in the layered oxide phase by reducing the Ni valence state and creating Li vacancies.A SNCM-Tb material with 1 at%Tb doping shows a Li^(+)diffusion coefficient up to more than 9 times higher than pristine SNCM in the non-diluted state.In situ X-ray diffraction analysis demonstrated a significantly facilitated H1-H2-H3 phase transition in the SNCM-Tb materials,thereby enhancing their rate capacity and structural stability.SNCM-Tb exhibited a reversible capacity of 186.9 mA h g^(-1)at 5 C,retaining 94.6%capacity after 100 cycles at 0.5 C under a 4,5 V cut-off.Our study elucidates the Tb^(4+)doping mechanisms and proposes a scalable method for enhancing the performance of single-crystal Ni-rich NCM materials.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Preparation and Tribological Investigation of Rare Earth Nanofilm on Single-Crystal Silicon Substrate

The self-assembled silicon substrate. The resultant contact angle meter and atomic method was introduced to successfully obtain film was characterized by means of X-ray rare earth（RE） nanofilm on a single-crystal photoelectron spectroscopy （XPS）, ellipsometer, force microscopy （AFM）. The scratch experiment was performed for interfacial adhesion measurement of the RE film. The friction and wear behavior of RE nanofilm was examined on a DF-PM reciprocating friction and wear tester. The results indicate the RE nanofilm is of low coefficient of friction （COF） and high wear resistance. These desirable characteristics of RE nanofilm together with its nanometer thickness, strong bonding to the substrate and low surface energy make it a promising choice as a solid lubricant film in micro electromechanical system （MEMS） devices.

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30~ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.

Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films

This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism （0.16 μB/Co2＋） in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism （0.65 μB/Co2＋） at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.

High-Quality Bi_2Te_3 Single Crystalline Films on Flexible Substrates and Bendable Photodetectors

Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2 Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained fexible films suitable for electronic applications.

Morphologies and Structures of Perovskite Thin Film on Zn-face and O-face of ZnO Single Crystal

ZnO single crystal was used as the substrate to study the effect of ZnO crystal plane polarity on the morphology and structure of CH_3NH_3PbI_3（MAPbI_3） perovskite film and carrier transport properties,which is meaningful for improving ZnO-based perovskite solar cell. It is found that perovskite thin film has small grain size（about 190 nm） and high coverage rate on the O-face of ZnO single crystal,and the dominant exposed crystal plane of perovskite film is（110） plane. While the MAPbI_3 thin film has large grain size（about 1.03 μm） and low coverage rate on the Zn-face,and the（022） plane is dominantly exposed for the perovskite film. The injection of photogenerated electrons from MAPbI_3 film into the O-face of ZnO single crystal is faster and more effective than that to Zn-face. It is supposed that O-face is more suitable for ZnO single crystal based perovskite cell fabrication than Zn-face.

3-21 XRD Investigation of InP Single Crystal and GaN Films Irradiated by Kr Ion

Single crystal (100) InP samples and (0001) GaN epitaxial layers were irradiated at the Heavy Ion ResearchFacility in Lanzhou (HIRFL) with 86Kr ions at room temperature. The ion fluence was varied from 5×1010 to1×1012 cm?2. Additionally, thin aluminum foils with different thickness (some tens of micrometers) were placed infront of some samples to decelerate the SHI's. Ion beam scanning was used to irradiate the whole sample surfacein a uniform way and maintained normal incidence. To prevent sample heating during high-energy irradiation, theflux was kept constant below 1.3×1010 cm?2 s?1. The modifications of the samples were investigated by XRD.

Electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film

Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices.For epitaxially grown graphene,the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies.Utilizing angle-resolved photoemission spectroscopy,here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111)alloy film by chemical vapor deposition.With a relatively low growth temperature,graphene on Cu/Ni(111)exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111).The linear dispersions forming Dirac cone are as wide as 2 e V,with the Fermi velocity of approximately 1.1×10^6 m/s.Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV.Our findings would promote the study of engineering of graphene on different substrate materials.

Physical and Chemical Properties of GdN: A Critical Comparison between Single Crystals and Thin Films, Theory and Experiment

Since about 10 years, there is a controversy about physics and chemistry of GdN between stoichiometric (tested) large single crystals and off-stoichiometric thin films. GdN single crystals are anti-ferromagnetic for applied magnetic fields of only 10 Oe, become ferromagnetic for excess electrons and larger magnetic fields. They are semimetallic. Thin films are ferromagnetic and semiconductors. Over the time, many experiments have been performed on both systems and the physics in each system is consistent. Band structure computations either yield ferromagnetic semimetals or ferromagnetic semiconducting thin films. There seems to be two incompatible worlds, those of single crystals and those of thin films. In the present work, the author compares directly the various measurements and calculations and gives reasons for their different results.

High cycle fatigue behavior of the second generation single crystal superalloy DD6

The second generation single crystal superalloy DD6 with 0.10%Hf and 0.34%Hf （in mass fraction） was subjected to high-cycle fatigue （HCF） loading at temperatures of 700 ℃ in ambient atmosphere. SEM was used to determine the initiation site and the failure mechanism. Evolution of the microstructure was investigated by TEM observation. The results show that fatigue limit of DD6 alloy with 0.34%Hf is a little smaller than that of the alloy with 0.10%Hf. The fatigue cracks initiated on the surface or near the surface of the specimens. The crack would propagate along { 111 } octahedral slip planes, rather than perpendicular to the loading axis of specimen. Typical fatigue striation formed in steady propagation of fatigue crack. The fracture mechanisms of the high cycle fatigue of DD6 alloys with 0.10%Hf and 0.34%Hf are quasi-cleavage fracture. Different types of dislocation structures were developed during high cycle fatigue deformation.