Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.

Analysis of single-event transient sensitivity in fully depleted silicon-on-insulator MOSFETs

Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.

The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer

The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.

A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

A radiation-hardened-by-design （RHBD） technique for phase-locked loops （PLLs） has been developed for single-event transient （SET） mitigation. By presenting a novel SET-resistant complementary current limiter （CCL） and implementing it between the charge pump （CP） and the loop filter （LPF）, the PLL＇s single-event susceptibility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator （VCO） by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.

An online fast multi-track locating algorithm for high-resolution single-event effect test platform

To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML.

Highly Elastic,Bioresorbable Polymeric Materials for Stretchable,Transient Electronic Systems

Substrates or encapsulants in soft and stretchable formats are key components for transient,bioresorbable electronic systems;however,elastomeric polymers with desired mechanical and biochemical properties are very limited compared to nontransient counterparts.Here,we introduce a bioresorbable elastomer,poly(glycolide-co-ε-caprolactone)(PGCL),that contains excellent material properties including high elongation-at-break(<1300%),resilience and toughness,and tunable dissolution behaviors.Exploitation of PGCLs as polymer matrices,in combination with conducing polymers,yields stretchable,conductive composites for degradable interconnects,sensors,and actuators,which can reliably function under external strains.Integration of device components with wireless modules demonstrates elastic,transient electronic suture system with on-demand drug delivery for rapid recovery of postsurgical wounds in soft,time-dynamic tissues.

Review of the Configuration and Transient Stability of Large-scale Renewable Energy Generation through Hybrid DC Transmission

Based on the complementary advantages of Line Commutated Converter(LCC)and Modular Multilevel Converter(MMC)in power grid applications,there are two types of hybrid DC system topologies:one is the parallel connection of LCC converter stations and MMC converter stations,and the other is the series connection of LCC and MMC converter stations within a single station.The hybrid DC transmission system faces broad application prospects and development potential in large-scale clean energy integration across regions and the construction of a new power system dominated by new energy sources in China.This paper first analyzes the system forms and topological characteristics of hybrid DC transmission,introducing the forms and topological characteristics of converter-level hybrid DC transmission systems and system-level hybrid DC transmission systems.Next,it analyzes the operating characteristics of LCC and MMC inverter-level hybrid DC transmission systems,provides insights into the transient stability of hybrid DC transmission systems,and typical fault ride-through control strategies.Finally,it summarizes the networking characteristics of the LCC-MMC series within the converter station hybrid DC transmission system,studies the transient characteristics and fault ridethrough control strategies under different fault types for the LCC-MMC series in the receiving-end converter station,and investigates the transient characteristics and fault ride-through control strategies under different fault types for the LCC-MMC series in the sending-end converter station.

Transient AC Overvoltage Suppression Orientated Reactive Power Control of the Wind Turbine in the LCC-HVDC Sending Grid

High-voltage direct current(HVDC) transmission is a crucial way to solve the reverse distribution of clean energy and loads. The line commutated converter-based HVDC(LCCHVDC) has become a vital structure for HVDC due to its high technological maturity and economic advantages. During the DC fault of LCC-HVDC, such as commutation failure, the reactive power regulation of the AC grid always lags the DC control process, causing overvoltage in the AC sending grid, which brings off-grid risk to the wind power generation based on power electronic devices. Nevertheless, considering that wind turbine generators have fast and flexible reactive power control capability, optimizing the reactive power control of wind turbines to participate in the transient overvoltage suppression of the sending grid not only improves the operational safety at the equipment level but also enhances the voltage stability of the system. This paper firstly analyses the impact of wind turbine's reactive power on AC transient overvoltage. Then, it proposes an improved voltage-reactive power control strategy, which contains a reactive power control delay compensation and a power command optimization based on the voltage time series prediction. The delay compensation is used to reduce the contribution of the untimely reactive power of wind turbines on transient overvoltage, and the power command optimization enables wind turbines to have the ability to regulate transient overvoltage, leading to the variation of AC voltage, thus suppressing the transient overvoltage. Finally, the effectiveness and feasibility of the proposed method are verified in a ±800kV/5000MW LCC-HVDC sending grid model based on MATLAB/Simulink.

Multi-circular formation control with reinforced transient profiles for nonholonomic vehicles:A path-following framework

This article investigates a multi-circular path-following formation control with reinforced transient profiles for nonholonomic vehicles connected by a digraph.A multi-circular formation controller endowed with the feature of spatial-temporal decoupling is devised for a group of vehicles guided by a virtual leader evolving along an implicit path,which allows for a circumnavigation on multiple circles with an anticipant angular spacing.In addition,notice that it typically imposes a stringent time constraint on time-sensitive enclosing scenarios,hence an improved prescribed performance control(IPPC)using novel tighter behavior boundaries is presented to enhance transient capabilities with an ensured appointed-time convergence free from any overshoots.The significant merits are that coordinated circumnavigation along different circles can be realized via executing geometric and dynamic assignments independently with modified transient profiles.Furthermore,all variables existing in the entire system are analyzed to be convergent.Simulation and experimental results are provided to validate the utility of suggested solution.

Modeling and analysis of single-event transients in charge pumps

It has been shown that charge pumps （CPs） dominate single-event transient （SET） responses of phase- locked loops （PLLs）. Using a pulse to represent a single event hit on CPs, the SET analysis model is established and the characteristics of SET generation and propagation in PLLs are revealed. An analysis of single event transients in PLLs demonstrates that the settling time of the voltage-controlled oscillators （VCOs） control voltage after a single event strike is strongly dependent on the peak control voltage deviation, the SET pulse width, and the settling time constant. And the peak control voltage disturbance decreases with the SET strength or the filter resistance. Further- more, the analysis in the proposed PLL model is confirmed by simulation results using MATLAB and HSPICE, respectively.

Pressure transient characteristics of non-uniform conductivity fractured wells in viscoelasticity polymer flooding based on oil-water two-phase flow

Polymer flooding in fractured wells has been extensively applied in oilfields to enhance oil recovery.In contrast to water,polymer solution exhibits non-Newtonian and nonlinear behavior such as effects of shear thinning and shear thickening,polymer convection,diffusion,adsorption retention,inaccessible pore volume and reduced effective permeability.Meanwhile,the flux density and fracture conductivity along the hydraulic fracture are generally non-uniform due to the effects of pressure distribution,formation damage,and proppant breakage.In this paper,we present an oil-water two-phase flow model that captures these complex non-Newtonian and nonlinear behavior,and non-uniform fracture characteristics in fractured polymer flooding.The hydraulic fracture is firstly divided into two parts:high-conductivity fracture near the wellbore and low-conductivity fracture in the far-wellbore section.A hybrid grid system,including perpendicular bisection(PEBI)and Cartesian grid,is applied to discrete the partial differential flow equations,and the local grid refinement method is applied in the near-wellbore region to accurately calculate the pressure distribution and shear rate of polymer solution.The combination of polymer behavior characterizations and numerical flow simulations are applied,resulting in the calculation for the distribution of water saturation,polymer concentration and reservoir pressure.Compared with the polymer flooding well with uniform fracture conductivity,this non-uniform fracture conductivity model exhibits the larger pressure difference,and the shorter bilinear flow period due to the decrease of fracture flow ability in the far-wellbore section.The field case of the fall-off test demonstrates that the proposed method characterizes fracture characteristics more accurately,and yields fracture half-lengths that better match engineering reality,enabling a quantitative segmented characterization of the near-wellbore section with high fracture conductivity and the far-wellbore section with low fracture conductivity.The novelty of this paper is the analysis of pressure performances caused by the fracture dynamics and polymer rheology,as well as an analysis method that derives formation and fracture parameters based on the pressure and its derivative curves.

Recurrent Transient Ischemic Attacks Revealing Cerebral Amyloid Angiopathy: A Comprehensive Case

This case report investigates the manifestation of cerebral amyloid angiopathy (CAA) through recurrent Transient Ischemic Attacks (TIAs) in an 82-year-old patient. Despite initial diagnostic complexities, cerebral angiography-MRI revealed features indicative of CAA. Symptomatic treatment resulted in improvement, but the patient later developed a fatal hematoma. The discussion navigates the intricate therapeutic landscape of repetitive TIAs in the elderly with cardiovascular risk factors, emphasizing the pivotal role of cerebral MRI and meticulous bleeding risk management. The conclusion stresses the importance of incorporating SWI sequences, specifically when suspecting a cardioembolic TIA, as a diagnostic measure to explore and exclude CAA in the differential diagnosis. This case report provides valuable insights into these challenges, highlighting the need to consider CAA in relevant cases.

A Transient-Pressure-Based Numerical Approach for Interlayer Identification in Sand Reservoirs

Almost all sandstone reservoirs contain interlayers. The identification and characterization of these interlayers iscritical for minimizing the uncertainty associated with oilfield development and improving oil and gas recovery.Identifying interlayers outside wells using identification methods based on logging data and machine learning isdifficult and seismic-based identification techniques are expensive. Herein, a numerical model based on seepageand well-testing theories is introduced to identify interlayers using transient pressure data. The proposed modelrelies on the open-source MATLAB Reservoir Simulation Toolbox. The effects of the interlayer thickness, position,and width on the pressure response are thoroughly investigated. A procedure for inverting interlayer parametersin the reservoir using the bottom-hole pressure is also proposed. This method uses only transient pressuredata during well testing and can effectively identify the interlayer distribution near the wellbore at an extremelylow cost. The reliability of the model is verified using effective oilfield examples.