Countermeasure against blinding attack for single-photon detectors in quantum key distribution

Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.

Time-Bin Phase-Encoding Measurement-Device-Independent Quantum Key Distribution with Four Single-Photon Detectors

Measurement-device-independent quantum key distribution （MDI-QKD） eliminates all loopholes on detection. 3 loss in the final key for the Previous experiments of time-bin phase-encoding MDI-QKD allow a factor of incapability of identifying two successive detection events by a single photon detector. Here we propose a new scheme to realize the time-bin phase-encoding MDI-QKD. The polarization states are used to generate the time bins and the phase-encoding states. The factor of loss in the final key is eliminated by using four single photon detectors at the measurement site. We show the feasibility of our scheme with a proof-of-principle experimental demonstration. The phase reference frame is rotated extremely slowly with only passive stabilization measures. The quantum bit error rate can reach 0.8% in the Z-basis and 26.2% in the X-basis.

The intensity detection of single-photon detectors based on photon counting probability density statistics

Single-photon detectors possess the ultra-high sensitivity, but they cannot directly respond to signal intensity. Conven- tional methods adopt sampling gates with fixed width and count the triggered number of sampling gates, which is capable of obtaining photon counting probability to estimate the echo signal intensity. In this paper, we not only count the number of triggered sampling gates, but also record the triggered time position of photon counting pulses. The photon counting probability density distribution is obtained through the statistics of a series of the triggered time positions. Then Minimum Variance Unbiased Estimation （MVUE） method is used to estimate the echo signal intensity. Compared with conventional methods, this method can improve the estimation accuracy of echo signal intensity due to the acquisition of more detected information. Finally, a proof-of-principle laboratory system is established. The estimation accuracy of echo signal intensity is discussed and a high accuracy intensity image is acquired under low-light level environments.

Photon-Counting Spectrometers Based on Superconducting Nanowire Single-Photon Detectors

Optical spectrum analysis provides a wealth of information about the physical world.Throughout the development of optical spectrum analysis,sensitivity has been one of the major topics and has become essential in applications dealing with faint light.Various high-sensitivity optical detection technologies have been applied in optical spectrum analysis to enhance its sensitivity to single-photon level.As an emerging single-photon detection technology,superconducting nanowire single-photon detectors(SNSPDs)have many impressive features such as high detection efficiency,broad operation bandwidth,small timing jitter,and so on,which make them promising for enhancing the performance of optical spectral analysis.Diverse schemes for photon-counting spectrometers based on SNSPDs have been demonstrated.This article reviews these impressive works and prospects for the future development of this technology.Further breakthroughs can be expected in its theories,device performance,applications,and combinations with in-sensor computing,promoting it to be a mature and versatile solution for optical spectrum analysis on ultra-faint light.

High-performance eight-channel system with fractal superconducting nanowire single-photon detectors

Superconducting nanowire single-photon detectors(SNSPDs)have become a mainstream photon-counting technology that has been widely applied in various scenarios.So far,most multi-channel SNSPD systems,either reported in literature or commercially available,are polarization sensitive,that is,the system detection efficiency(SDE)of each channel is dependent on the state of polarization of the to-be-detected photons.Here,we reported an eight-channel system with fractal SNSPDs working in the wavelength range of 930 to 940 nm,which are all featured with low polarization sensitivity.In a close-cycled Gifford-McMahon cryocooler system with the base temperature of 2.2 K,we installed and compared the performance of two types of devices:(1)SNSPD,composed of a single,continuous nanowire and(2)superconducting nanowire avalanche photodetector(SNAP),composed of 16 cascaded units of two nanowires electrically connected in parallel.The highest SDE among the eight channels reaches 96+^(4)_(-5%),with the polarization sensitivity of 1.02 and a dark-count rate of 13 counts per second.The average SDE for eight channels for all states of polarization is estimated to be 90±5%.It is concluded that both the SNSPDs and the SNAPs can reach saturated,high SDE at the wavelength of interest,and the SNSPDs show lower dark-count(false-count)rates,whereas the SNAPs show better properties in the time domain.With the adoption of this system,we showcased the measurements of the second-order photon-correlation functions of light emission from a singlephoton source based on a semiconductor quantum dot and from a pulsed laser.It is believed that this work will provide new choices of systems with single-photon detectors combining the merits of high SDE,low polarization sensitivity,and low noise that can be tailored for different applications.

Superconducting single-photon detectors integrated with diamond nanophotonic circuits

Photonic quantum technologies hold promise to repeat the success of integrated nanophotonic circuits in non-classical applications.Using linear optical elements,quantum optical computations can be performed with integrated optical circuits and can therefore overcome the existing limitations in terms of scalability.In addition to passive optical devices for realizing photonic quantum gates,active elements,such as single-photon sources and single-photon detectors,are essential ingredients for future optical quantum circuits.Material systems that allow for the monolithic integration of all components are particularly attractive,including III-V semiconductors,silicon and diamond.Here,we demonstrate nanophotonic integrated circuits made from high-quality polycrystalline diamond thin films in combination with on-chip single-photon detectors.By using superconducting nanowires that are coupled evanescently to traveling waves,we achieve high detection efficiencies of up to 66%as well as low dark count rates and a timing resolution of 190 ps.Our devices are fully scalable and hold promise for functional diamond photonic quantum devices.

Superconducting nanowire single-photon detectors:recent progress

Research of superconducting nanowire singlephoton detectors(SNSPDs) has been progressing rapidly in recent years. The combined properties of high efficiency,low noise, and fast speed of SNSPDs permit its applications ranging from long-distance quantum teleportation to moonto-earth optical communications. Here we briefly discussed recent progress of SNSPDs, in particular(1) tungstensilicide SNSPDs,(2) waveguide-integrated SNSPDs, and(3) a few applied demonstrations.

Advances in near-infrared avalanche diode single-photon detectors

Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain,high sensitivity,fast response,small vol-ume,and ease of integration.The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present.Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits.This paper analyzes the latest development and application of these InGaAs/InP photodiodes,then briefly re views other near-infrared single-photon detection technologies based on new materials and new mechanisms.

Dual-lens beam compression for optical coupling in superconducting nanowire single-photon detectors

The optical coupling of superconducting nanowire single-photon detectors （SNSPDs） has always been restricted to a single-mode fiber for a limited detection area. In this study, for enhancing photon coupling, a dual-lens system operating at 2.2 K was used to compress the beam size on the basis of the Gaussian beam theory and geometric approximation. A magnification of approximately 0.3 was obtained, and a focused spot with diameter of approximately 10 ~m was measured from a multimode fiber. Assisted with the compressed beam, a system efficiency of 55 % （1550 nm） was achieved for a SNSPD with a detection area of 10 μm × 10 μm and 62.5 pm multimode fiber coupling. At the same time, a high speed of 106 MHz was measured with the proposed system. The realization of a highly compressed optical beam reduced the optical coupling requirement and helped maintain a high speed for the SNSPD.

Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Geometric origin of intrinsic dark counts in superconducting nanowire single-photon detectors

The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical SNSPDs.We herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout method.For these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'widths.With respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.

Low-noise and low-power pixel sensor chip for gas pixel detectors

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

Flexibility potential of Cs_(2)BX_(6)(B=Hf,Sn,Pt,Zr,Ti;X=I,Br,Cl)with application in photovoltaic devices and radiation detectors

As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and optical properties,research on mechanical aspects is limited.This article builds a vacancyordered double perovskite model,employing first-principles calculations to analyze mechanical,bonding,electronic,and optical properties.Results show Cs_(2)Hfl_(6),Cs_(2)SnBr_(6),Cs_(2)SnI_(6),and Cs_(2)PtBr_(6)have Young's moduli below 13 GPa,indicating flexibility.Geometric parameters explain flexibility variations with the changes of B and X site composition.Bonding characteristic exploration reveals the influence of B and X site electronegativity on mechanical strength.Cs_(2)SnBr_(6)and Cs_(2)PtBr_(6)are suitable for solar cells,while Cs_(2)HfI_(6)and Cs_(2)TiCl_(6)show potential for semi-transparent solar cells.Optical property calculations highlight the high light absorption coefficients of up to 3.5×10^(5) cm^(-1)for Cs_(2)HfI_(6)and Cs_(2)TiCl_(6).Solar cell simulation shows Cs_(2)PtBr_(6)achieves 22.4%of conversion effciency.Cs_(2)ZrCl_(6)holds promise for ionizing radiation detection with its 3.68 eV bandgap and high absorption coefficient.Vacancy-ordered double perovskites offer superior flexibility,providing valuable insights for designing stable and flexible devices.This understanding enhances the development of functional devices based on these perovskites,especially for applications requiring high stability and flexibility.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

FPGA implementation of 500-MHz high-count-rate high-time-resolution real-time digital neutron-gamma discrimination for fast liquid detectors

Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a self-developed 500-Msps,12-bit digitizer,and the neutron and gamma spectra were calculated directly on an FPGA.A fast neutron flux measurement system with BC-501A and EJ-309 liquid scintillator detectors was developed and a fast neutron measurement experiment was successfully performed on the HL-2 M tokamak at the Southwestern Institute of Physics,China.The experimental results demonstrated that the system obtained the neutron and gamma spectra with a time accuracy of 1 ms.At count rates of up to 1 Mcps,the figure of merit was greater than 1.05 for energies between 50 keV and 2.8 MeV.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.

Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

In-flight Energy Calibration of the GECAM Gamma-ray Detectors

The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources.The mission consists of two microsatellites which are planned to operate at the opposite sides of the Earth.Each GECAM satellite could detect and localize GRBs in about 8 keV-5 MeV with its 25 Gamma-Ray Detectors(GRDs).In this work,we report the in-flight energy calibration of GRDs using the characteristic gamma-ray lines in the background spectra,and show their performance evolution during the commissioning phase.Besides,a preliminary cross-calibration of energy response with Fermi GBM data is also presented,validating the energy response of GRDs.

基于InVEST&GEO-detectors模型的会仙湿地生境质量变化及影响因素研究

喀斯特湿地是广泛分布在喀斯特地区的一种特殊的湿地类型,其生态地位举足轻重,探索喀斯特湿地生境质量变化的影响因素对喀斯特地区生态建设具有重要的意义。本文基于会仙湿地保护区2000和2020年的土地利用数据,通过InVEST模型评估会仙湿地保护区的生境质量,利用地理探测器探测影响会仙湿地保护区生境质量变化的自然和人为因素。研究结果表明:1)研究区2000至2020年建设用地明显扩张,草地和水体显著减少;2)会仙湿地保护区生境质量总体呈现下降的趋势,生境退化度有所上升,生境质量较差的区域主要集中在研究区的北部、中部和东北部;3)地理探测器识别出会仙湿地保护区生境质量空间变化受自然和人为因子的综合作用,主导影响因子是GDP(q为0.135),其次为夜间灯光指数(DMSP)(q为0.053);交互作用探测结果表明,各因子对生境质量影响呈现出双因子增强效果。研究结果有助于揭示会仙湿地保护区生境质量的时空演变过程,可针对会仙湿地生态建设的问题提出可行的应对策略。