In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, t...In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.展开更多
A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15...A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.展开更多
In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer...In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.展开更多
We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and m...We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.展开更多
After briefly introducing the characteristics of 1/f noise in millimeter wave focalplane array detectors, the paper analyses the relation of wavelet transform and 1/f noise in detail, suggests the fashion of decorrela...After briefly introducing the characteristics of 1/f noise in millimeter wave focalplane array detectors, the paper analyses the relation of wavelet transform and 1/f noise in detail, suggests the fashion of decorrelating 1/f noise using the wavelet transform and deduces the relative expressions. The results of computer simulation show good effectiveness.展开更多
Room-temperature terahertz （THz） detectors indicate a great potential in the imaging application because of their real-time, compact bulk, and wide spectral band responding characteristics. THz detectors with differ...Room-temperature terahertz （THz） detectors indicate a great potential in the imaging application because of their real-time, compact bulk, and wide spectral band responding characteristics. THz detectors with different dimensions based on a micro-bridge structure have been designed and fabricated to get optimized micro-bolometer parameters from the test results of membrane deformation. A nanostructured titanium （Ti） thin film absorber is integrated in the micro-bridge structure of the VOx micro-bolometer by a combined process of magnetron sputtering and reactive ion etching （RIE）, and its improvement of THz absorption is verified by an optical characteristics mesurement. Continuous-wave THz detection and imaging are demonstrated by using a 2.52 THz far infrared CO2 laser and a 320x240 vanadium oxide micro-bolometer focal plane array with an optimized cell structure. With this detecting system, THz imaging of metal concealed in a wiping cloth and an envelope is demonstrated, respectively.展开更多
Aiming to solve the problem that it is difficult to accurately measure UV cut-off transmittance of xenon quartz glass by using present spectrophotometer in China SG III project. Through the analysis, we believe that i...Aiming to solve the problem that it is difficult to accurately measure UV cut-off transmittance of xenon quartz glass by using present spectrophotometer in China SG III project. Through the analysis, we believe that its reason was that the xenon quartz glass was nonplanar so the outgoing beam geometry from under-test was different from that from standard sample. A method of transmittance measurement based on focal-plane-array camera was proposed in this article. The effects of camera uniformity and spot sampling on transmittance measurement were analyzed theoretically. This method, which can reduce the effect of beam geometry on transmittance measurement and eliminate the cutting error occurring during light transmission by monitoring the completeness of incident beam in real-time, is verified from experiments. The random standard uncertainty of this method here is 0.035% or less. It is particularly useful in the transmittance measurement of nonplanar optical.展开更多
本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外...本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0402400)the National Natural Science Foundation of China(Grant Nos.61675225,61605232,and 61775228)the Shanghai Rising-Star Program,China(Grant No.17QA1404900)
文摘In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.
基金supported by the National Basic Research Program of China(Grant Nos.2013CB932904 and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)the National Natural Science Foundation of China(Grant Nos.61274013,61290303,and 61306013)
文摘A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
基金Project supported by the National Basic Research Program of China(Grant Nos.2014CB643903,2013CB932904,2012CB932701,and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+2 种基金the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,61306013,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)China Postdoctoral Science Foundation(Grant No.2014M561029)
文摘In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10732080 and 10627201)the National Basic Research Program of China (Grant No. 2006CB300404)
文摘We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.
文摘After briefly introducing the characteristics of 1/f noise in millimeter wave focalplane array detectors, the paper analyses the relation of wavelet transform and 1/f noise in detail, suggests the fashion of decorrelating 1/f noise using the wavelet transform and deduces the relative expressions. The results of computer simulation show good effectiveness.
基金supported by the National Science Funds for Creative Research Groups of China under Grant No.61421002National High Technology Research and Development Program under Grant No.2015AA8123014
文摘Room-temperature terahertz （THz） detectors indicate a great potential in the imaging application because of their real-time, compact bulk, and wide spectral band responding characteristics. THz detectors with different dimensions based on a micro-bridge structure have been designed and fabricated to get optimized micro-bolometer parameters from the test results of membrane deformation. A nanostructured titanium （Ti） thin film absorber is integrated in the micro-bridge structure of the VOx micro-bolometer by a combined process of magnetron sputtering and reactive ion etching （RIE）, and its improvement of THz absorption is verified by an optical characteristics mesurement. Continuous-wave THz detection and imaging are demonstrated by using a 2.52 THz far infrared CO2 laser and a 320x240 vanadium oxide micro-bolometer focal plane array with an optimized cell structure. With this detecting system, THz imaging of metal concealed in a wiping cloth and an envelope is demonstrated, respectively.
文摘Aiming to solve the problem that it is difficult to accurately measure UV cut-off transmittance of xenon quartz glass by using present spectrophotometer in China SG III project. Through the analysis, we believe that its reason was that the xenon quartz glass was nonplanar so the outgoing beam geometry from under-test was different from that from standard sample. A method of transmittance measurement based on focal-plane-array camera was proposed in this article. The effects of camera uniformity and spot sampling on transmittance measurement were analyzed theoretically. This method, which can reduce the effect of beam geometry on transmittance measurement and eliminate the cutting error occurring during light transmission by monitoring the completeness of incident beam in real-time, is verified from experiments. The random standard uncertainty of this method here is 0.035% or less. It is particularly useful in the transmittance measurement of nonplanar optical.
文摘本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。
