Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.展开更多
In this paper, we have studied hot carrier injection （HCI） different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can ...In this paper, we have studied hot carrier injection （HCI） different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A （DC stress with electron injection）, the degradation keeps increasing. In the stress modes B （DC stress and then stress with the smMlest gate injection） and C （DC stress and then stress with hole injection under Vg = 0 V and Vd = 1.8 V）, recovery appears in the second stress period. And in the stress mode D （DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V）, as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.展开更多
Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.展开更多
背景:医用水凝胶是具有三维结构网络的新型功能高分子材料,具有出色的生物相容性,目前已在组织工程领域、药物载体领域有广泛研究,但基于组织工程探究医用水凝胶与中医药结合治疗疾病的研究还处于初期探索阶段。因此,通过对医用水凝胶...背景:医用水凝胶是具有三维结构网络的新型功能高分子材料,具有出色的生物相容性,目前已在组织工程领域、药物载体领域有广泛研究,但基于组织工程探究医用水凝胶与中医药结合治疗疾病的研究还处于初期探索阶段。因此,通过对医用水凝胶机制作用的剖析,整合医用水凝胶与中医药在研究中联合应用的文章,进而更好地为科研工作者提供思路,对中医药与医用水凝胶联合应用具有重要意义。目的:基于组织工程研究探讨中医药联合医用水凝胶治疗疾病的策略及意义。方法:利用PubMed和中国知网数据库,检索有关中医药联合医用水凝胶在组织工程中应用的文献,检索时间为2010年1月至2022年11月,英文检索词为“hydrogel,traditional Chinese medicine,drug carrier,tissue engineering”,中文检索词为“医用水凝胶、中医药、药物载体、组织工程”。根据纳入与排除标准对所有文章进行初筛后,最终纳入61篇文章进行综述。结果与结论:①中医药联合医用水凝胶的应用虽然在关节内、组织器官内、软组织伤口和组织工程等方面有所涉及,但除了中医药结合水凝胶敷料在临床应用治疗软组织损伤外,其他方面尚处于基础实验阶段。②中医药联合医用水凝胶的发展有着巨大潜力和发展前景,但对于性能要求较高的凝胶在制造方面存在一定难度,理化性质精确掌握难度较大。③目前综合来看可注射水凝胶凭借着简便易用的特点,其在与中医药联合使用可延伸范围较广,可用于关节、器官和组织工程相关疾病的治疗;智能水凝胶有较高的灵敏度和可逆转化性也可满足特殊环境下的使用;将两者结合的中医药使用过程中还需要明确中药成分的作用机制。④中医药联合医用水凝胶治疗疾病的策略应着手于中医药对器官、组织、细胞的治疗作用联合适当种类的医用水凝胶进行匹配,可弥补传统中医给药方式和频繁给药的不足,在组织工程方面可以用水凝胶负载中药干预后的干细胞,或者同时负载中药和干细胞用于相关疾病的治疗。⑤在中医药联合医用水凝胶应用的未来研究中,还需要考虑:应当确保医用水凝胶生物性能可以量化,以不同材料不同制造工艺把握水凝胶特性,制造出所需要的符合应用条件的医用水凝胶;在中医药方面需要对已知中药单体、中药复方提取物的治疗效果和应用机制全面了解剖析,在更明了的机制下实现中医药与医用水凝胶更多更完美的结合;借助医学科技创新能力的不断提高,医用水凝胶可以创新性地结合中医药其他传统治疗方法比如针灸、推拿和拔罐等方式进行多角度运用。展开更多
Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-...Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-stress-induced damage at Vg = Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different： the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.展开更多
基金Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001
文摘Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
基金supported by the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002)the grant from the Major State Basic Research Development Program of China (973 Program,No. 2011CB309606)the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009)
文摘In this paper, we have studied hot carrier injection （HCI） different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A （DC stress with electron injection）, the degradation keeps increasing. In the stress modes B （DC stress and then stress with the smMlest gate injection） and C （DC stress and then stress with hole injection under Vg = 0 V and Vd = 1.8 V）, recovery appears in the second stress period. And in the stress mode D （DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V）, as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.
基金supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.
文摘背景:医用水凝胶是具有三维结构网络的新型功能高分子材料,具有出色的生物相容性,目前已在组织工程领域、药物载体领域有广泛研究,但基于组织工程探究医用水凝胶与中医药结合治疗疾病的研究还处于初期探索阶段。因此,通过对医用水凝胶机制作用的剖析,整合医用水凝胶与中医药在研究中联合应用的文章,进而更好地为科研工作者提供思路,对中医药与医用水凝胶联合应用具有重要意义。目的:基于组织工程研究探讨中医药联合医用水凝胶治疗疾病的策略及意义。方法:利用PubMed和中国知网数据库,检索有关中医药联合医用水凝胶在组织工程中应用的文献,检索时间为2010年1月至2022年11月,英文检索词为“hydrogel,traditional Chinese medicine,drug carrier,tissue engineering”,中文检索词为“医用水凝胶、中医药、药物载体、组织工程”。根据纳入与排除标准对所有文章进行初筛后,最终纳入61篇文章进行综述。结果与结论:①中医药联合医用水凝胶的应用虽然在关节内、组织器官内、软组织伤口和组织工程等方面有所涉及,但除了中医药结合水凝胶敷料在临床应用治疗软组织损伤外,其他方面尚处于基础实验阶段。②中医药联合医用水凝胶的发展有着巨大潜力和发展前景,但对于性能要求较高的凝胶在制造方面存在一定难度,理化性质精确掌握难度较大。③目前综合来看可注射水凝胶凭借着简便易用的特点,其在与中医药联合使用可延伸范围较广,可用于关节、器官和组织工程相关疾病的治疗;智能水凝胶有较高的灵敏度和可逆转化性也可满足特殊环境下的使用;将两者结合的中医药使用过程中还需要明确中药成分的作用机制。④中医药联合医用水凝胶治疗疾病的策略应着手于中医药对器官、组织、细胞的治疗作用联合适当种类的医用水凝胶进行匹配,可弥补传统中医给药方式和频繁给药的不足,在组织工程方面可以用水凝胶负载中药干预后的干细胞,或者同时负载中药和干细胞用于相关疾病的治疗。⑤在中医药联合医用水凝胶应用的未来研究中,还需要考虑:应当确保医用水凝胶生物性能可以量化,以不同材料不同制造工艺把握水凝胶特性,制造出所需要的符合应用条件的医用水凝胶;在中医药方面需要对已知中药单体、中药复方提取物的治疗效果和应用机制全面了解剖析,在更明了的机制下实现中医药与医用水凝胶更多更完美的结合;借助医学科技创新能力的不断提高,医用水凝胶可以创新性地结合中医药其他传统治疗方法比如针灸、推拿和拔罐等方式进行多角度运用。
基金Project supported by the National Natural Science Foundation of China （Grant No 60206006）. the Program for New Century Excellent Talents of Ministry of Education of China （Grant No 681231366）. the National Defense Pre-Research Foundation of China （Grant No 51408010305DZ0168） and the Key Project of Chinese Ministry of Education （Grant No 104172）.
文摘Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-stress-induced damage at Vg = Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different： the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.
