Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates ...Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates that the contrast arising from different conductivities or bandgaps can be observed in SEM images if single-walled carbon nanotubes （SWCNTs） are placed on a substrate. In this study, we use SWCNTs on different substrates as model systems to perform SEM imaging of nanomaterials. Substantial SEM observations are conducted at both high and low acceleration voltages, leading to a comprehensive understanding of the effects of the imaging parameters and substrates on the material and surface-charge signals, as well as the SEM imaging. This unified picture of SEM imaging not only furthers our understanding of SEM images of SWCNTs on a variety of substrates but also provides a basis for developing new imaging recipes for other important nanomaterials used in nanoelectronics and nanophotonics.展开更多
Single-walled carbon nanotube （SWCNT） films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benef...Single-walled carbon nanotube （SWCNT） films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benefit from characterization technologies that can efficiently identify and group SWCNTs based on metallic or semiconducting natures with high spatial resolution. Here, we developed a facile imaging technique using scanning electron microscopy （SEM） to discriminate between semiconducting and metallic SWCNTs based on black and white colors. The average width of the single-SWCNT image was reduced to -9 nm, -1/5 of previous imaging results. These achievements were attributed to reduced surface charging on the SiOdSi substrate under enhanced accelerating voltages. With this identification technique, a CNT transistor with an on/off ratio of 〉10s was fabricated by identifying and etching out the white metallic SWCNTs. This improved SEM imaging technique can be widely applied in evaluating the selective growth and sorting of SWCNTs.展开更多
文摘Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates that the contrast arising from different conductivities or bandgaps can be observed in SEM images if single-walled carbon nanotubes （SWCNTs） are placed on a substrate. In this study, we use SWCNTs on different substrates as model systems to perform SEM imaging of nanomaterials. Substantial SEM observations are conducted at both high and low acceleration voltages, leading to a comprehensive understanding of the effects of the imaging parameters and substrates on the material and surface-charge signals, as well as the SEM imaging. This unified picture of SEM imaging not only furthers our understanding of SEM images of SWCNTs on a variety of substrates but also provides a basis for developing new imaging recipes for other important nanomaterials used in nanoelectronics and nanophotonics.
文摘Single-walled carbon nanotube （SWCNT） films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benefit from characterization technologies that can efficiently identify and group SWCNTs based on metallic or semiconducting natures with high spatial resolution. Here, we developed a facile imaging technique using scanning electron microscopy （SEM） to discriminate between semiconducting and metallic SWCNTs based on black and white colors. The average width of the single-SWCNT image was reduced to -9 nm, -1/5 of previous imaging results. These achievements were attributed to reduced surface charging on the SiOdSi substrate under enhanced accelerating voltages. With this identification technique, a CNT transistor with an on/off ratio of 〉10s was fabricated by identifying and etching out the white metallic SWCNTs. This improved SEM imaging technique can be widely applied in evaluating the selective growth and sorting of SWCNTs.
