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Low-Temperature Sintering and Microwave DielectricProperties of Ba_2Ti_3Nb_4O_(18) Ceramics
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作者 胡云香 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2011年第5期847-851,共5页
The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO ( 〈1 wt%) con... The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO ( 〈1 wt%) considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 ( 〈3.5 wt%) remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.Ba2Ti3Nb4O18 ceramics sintered at 1 050 ℃ for 4 h with the addition of 1.0 wt% CuO and 3.5 wt% H3BO3 exhibited good microwave dielectric properties:er=33.74,Q?f=13 812 GHz,and tf=-5.35 ppm/°C at about 5.0 GHz. 展开更多
关键词 Ba2Ti3Nb4O18 ceramics microwave dielectric properties low-temperature sintering CuO and H3BO3 additions
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Microwave dielectric properties of CaCu_(3)Ti_(4)O_(12) ceramics:A clue to its intrinsic dielectric response
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作者 X.Huang H.X.Guo +6 位作者 P.S.Zhu L.Liu J.Xiao D.P.Tang C.Lin X.Wu X.H.Zheng 《Journal of Advanced Dielectrics》 2023年第5期20-25,共6页
CaCu_(3)Ti_(4)O_(12)(CCTO)is a potential dielectric material with giant permittivity,good stability over the wide temperature and frequency range.However,the dielectric responses of CCTO-based ceramics are mainly inve... CaCu_(3)Ti_(4)O_(12)(CCTO)is a potential dielectric material with giant permittivity,good stability over the wide temperature and frequency range.However,the dielectric responses of CCTO-based ceramics are mainly investigated in the frequency of 102-106 Hz,which is far low to clarify the intrinsic dielectric feature.So,microwave dielectric properties have been investigated for the CCTO porous ceramics sintered at low temperature(≤1000°C).Good microwave dielectric properties of permittivityε=62.7,quality factor Qf=3062 GHz and temperature coefficient of the resonant frequencyτf=179 ppm/°C are achieved for the CCTO ceramics sintered at 1000°C,the dielectric loss significantly decreases two orders to 0.002 compared to that of CCTO ceramics sintered at critical temperature of 1020°C confirmed by differential scanning calorimetry(DSC).This clue indicates that giant permittivity and high loss is not intrinsic for CCTO ceramics,but derives from composition segregation,liquid phase and defects associated with internal barrier layer capacitor(IBLC).It suggests that CCTO-based ceramics is a promising microwave dielectric materials with high permittivity. 展开更多
关键词 CCTO microwave dielectric properties sintering temperature dielectric mechanism.
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Influence of sintering temperature on electrical properties of(K_(0.4425)Na_(0.52)Li_(0.0375))(Nb_(0.8825)Sb_(0.07)Ta_(0.0475))O_(3) ceramics without phase transition induced by sintering temperature
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作者 Shaohua QIAN Kongjun ZHU +3 位作者 Xuming PANG Jing WANG Jinsong LIU Jinhao QIU 《Journal of Advanced Ceramics》 SCIE CAS 2013年第4期353-359,共7页
Lead-free(K_(0.4425)Na_(0.52)Li_(0.0375))(Nb_(0.8825)Sb_(0.07)Ta_(0.0475))O_(3)(KNLNST)piezoelectric ceramics are synthesized by the conventional solid-state reaction method.The sintering temperature and poling temper... Lead-free(K_(0.4425)Na_(0.52)Li_(0.0375))(Nb_(0.8825)Sb_(0.07)Ta_(0.0475))O_(3)(KNLNST)piezoelectric ceramics are synthesized by the conventional solid-state reaction method.The sintering temperature and poling temperature dependence of ceramic properties are investigated.Previous studies have shown that variation of sintering temperature can cause phase transition,similar to the morphotropic phase boundary(MPB)behavior induced by composition changes in Pb(Zr,Ti)O_(3)(PZT).And the best piezoelectric performance can be obtained near the phase-transition sintering temperature.In this research,phase transition induced by sintering temperature cannot be detected and excellent piezoelectric properties can still be obtained.The sintering temperature of the largest piezoelectric coefficient of such composition is lower than that of the highest density,which is considered in composition segregation as a result of intensified volatilization of alkali metal oxides.Combined with the effect of poling temperature,the peak values of the piezoelectric properties are d_(33)=313 pC/N,k_(p)=47%,ε_(r)=1825,tanδd=0.024,T_(o-t)=88℃,and TC=274℃. 展开更多
关键词 TETRAGONAL piezoelectric properties sintering temperature DOPED poling temperature
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Morphology and dielectric properties of single sample Ni_(0.5)Zn_(0.5)Fe_(2)O_(4)nanoparticles prepared via mechanical alloying
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作者 Rafidah HASSAN Jumiah HASSAN +2 位作者 Mansor HASHIM Suriati PAIMAN Raba′ah Syahidah AZIS 《Journal of Advanced Ceramics》 SCIE CAS 2014年第4期306-316,共11页
Nickel-zinc ferrite nanoparticles are important soft magnetic materials for high and low frequency device application and good dielectric materials.Nickel-zinc ferrite nanoparticles with composition Ni_(0.5)Zn_(0.5)Fe... Nickel-zinc ferrite nanoparticles are important soft magnetic materials for high and low frequency device application and good dielectric materials.Nickel-zinc ferrite nanoparticles with composition Ni_(0.5)Zn_(0.5)Fe_(2)O_(4)were prepared using mechanical alloying to analyze the effect of sintering temperature on microstructure evolution of a single sample with dielectric properties.The single sample with nanosized pellet was sintered from 600℃to 1200℃and analyzed by X-ray diffraction(XRD)to investigate the phases of the powders and by field emission scanning electron microscopy(FESEM)for the morphology and microstructure analyses.Dielectric properties such as dielectric constant(e″)and dielectric loss(e′)were studied as functions of frequency and temperature for Ni_(0.5)Zn_(0.5)Fe_(2)O_(4).The dielectric properties of the sample were measured using HP 4192A LF impedance analyzer in the low frequency range from 40 Hz to 1 MHz and at temperature ranging from 30℃to 250℃.The results showed that single phase Ni_(0.5)Zn_(0.5)Fe_(2)O_(4)cannot be formed by milling alone and therefore requires sintering.The crystallization of the ferrite sample increased with increasing sintering temperature,while the porosity decreased and the density and average grain size increased.Evolution of the microstructure resulted in three activation energies of grain growth,where above 850℃there was a rapid grain growth in the microstructure.Dielectric constant and loss factor decreased with the increase in frequency.The optimum sintering temperature of Ni_(0.5)Zn_(0.5)Fe_(2)O_(4)was found to be 900℃which had high dielectric constant and low dielectric loss. 展开更多
关键词 mechanical alloying sintering temperature dielectric properties
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Effects of various fillers on sintering, microstructures and properties of Ca-Ba-Al-B-Si-O glass/ceramic composites 被引量:3
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作者 刘明 周洪庆 +2 位作者 刘敏 岳振星 朱海奎 《Journal of Central South University》 SCIE EI CAS 2014年第3期843-848,共6页
Low-temperature sintering and properties of LTCC(low temperature co-fired ceramics) materials based on CaO-BaO-Al2O3-B2O3-SiO2 glass and various fillers such as Al2O3, silica glass, christobalite, AlN, ZrO2, MgO·... Low-temperature sintering and properties of LTCC(low temperature co-fired ceramics) materials based on CaO-BaO-Al2O3-B2O3-SiO2 glass and various fillers such as Al2O3, silica glass, christobalite, AlN, ZrO2, MgO·SiO2, TiO2 were investigated. The results show that densification, crystallization, microstructures and dielectric properties of the composites are found to strongly depend on the type of filler. The densification process of glass/ceramic composites with various fillers is mainly from 600 °C to 925 °C, and the initial compacting temperature of samples is 600 °C. The initial rapid densification of samples starts at its glass softening temperature. LTCC compositions containing Al2O3, silica glass, AlN and MgO·SiO2 fillers start to have the crystallization peaks at 890, 903, 869 and 844 °C, respectively. The crystallization peaks are believed as correlated to the crystallization of CaAl2SiO8, β-SiO2, Ca2Al2SiO7 and β-SiO2. The composite ceramic with Al2O3, silica glass and TiO2 ceramic have a better dense structure and better smooth fracture surface. Sample for Al2O3 has the lowest dielectric loss tanδ value of 0.00091, whereas the sample for MgO·SiO2 has the highest dielectric loss tanδ value of 0.02576. The sample for TiO2 has the highest dielectric constant value of 14.46, whereas the sample for AlN has the lowest dielectric constant value of 4.61. 展开更多
关键词 复合材料性能 低温共烧陶瓷 氧化硅玻璃 低温烧结 填料 微观结构 二氧化硅 致密化过程
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Effects of temperature and Nickel content on magnetic properties of Ni-doped ZnO 被引量:3
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作者 REN Lingling JEUNG Won Young 《Rare Metals》 SCIE EI CAS CSCD 2006年第z2期24-29,共6页
Magnetic properties of diluted magnetic semiconductors (DMSs), Ni-doped ZnO materials, prepared by sol-gel method were investigated by measuring magnetization as functions of magnetic field. The Ni content affects the... Magnetic properties of diluted magnetic semiconductors (DMSs), Ni-doped ZnO materials, prepared by sol-gel method were investigated by measuring magnetization as functions of magnetic field. The Ni content affects the magnetic properties at low sintered temperature but it has few effects on the magnetic properties at high sintered temperature. The sintered temperature has great effects on the magnetic properties of Ni/ZnO at high original mole ratio of Ni/Zn while it has slight effects on the magnetic properties of Ni/ZnO at low original mole ratio of Ni/Zn whatever low or high sintered temperature. 展开更多
关键词 DILUTED MAGNETIC SEMICONDUCTOR Ni-doped ZNO MAGNETIC properties SOL-GEL sintered temperature Ni content
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GdPO_(4)∶Tb^(3+)荧光粉的制备及发光性能研究
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作者 孟晓燕 廖云 +3 位作者 张丽蓉 张雨蒙 吴丽丹 杨流赛 《人工晶体学报》 北大核心 2024年第1期107-114,共8页
稀土Tb^(3+)掺杂磷酸钆(GdPO_(4))绿色荧光粉是实现白光LED的潜在荧光粉,其常规水热法的制备存在反应时间较长、Tb^(3+)的掺杂量偏低等问题。本文采用水热法结合高温烧结制备了一系列Gd_(1-x)PO_(4)∶xTb^(3+)(x=0、1%、5%、11%、13%、... 稀土Tb^(3+)掺杂磷酸钆(GdPO_(4))绿色荧光粉是实现白光LED的潜在荧光粉,其常规水热法的制备存在反应时间较长、Tb^(3+)的掺杂量偏低等问题。本文采用水热法结合高温烧结制备了一系列Gd_(1-x)PO_(4)∶xTb^(3+)(x=0、1%、5%、11%、13%、15%、17%、19%)样品,通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)-能谱仪(EDS)、红外光谱仪(FT-IR)和荧光分光光度计对所得样品的相结构、形貌、元素组成、光学吸收和发光性能进行了表征。研究结果表明,所合成样品均为GdPO_(4)的纯相,属于单斜晶系独居石结构,且Tb^(3+)均匀分布在GdPO_(4)基质中引起晶格收缩。在274 nm的光激发下,GdPO_(4)∶Tb^(3+)荧光粉的最强发射峰位于545 nm处,属于Tb^(3+)的^(5)D_(4)→^(7)F_(5)跃迁,且其荧光猝灭摩尔分数高达15%,此样品(GdPO_(4)∶15%Tb^(3+))表现出优异的绿光发射和良好的热稳定性。 展开更多
关键词 磷酸钆 Tb 3+掺杂 水热法 高温烧结 发光性能 绿色荧光粉
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Effects of MgO on Properties of La_2O_3-TiO_2 Ceramics
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作者 Liu Min Zhu Haikui Zhou Hongqing 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第1期124-124,共1页
The influence of MgO on sintering and dielectric properties of La2O3-TiO2 ceramics was investigated, and the mechanism also discussed. The results show that La2O3-TiO2 ceramics with MgO can be sintered between 1200 an... The influence of MgO on sintering and dielectric properties of La2O3-TiO2 ceramics was investigated, and the mechanism also discussed. The results show that La2O3-TiO2 ceramics with MgO can be sintered between 1200 and 1280 ℃. With the increasing of the MgO, the dielectric constant of the material decreases, but the temperature coefficient of dielectric constant increases. Between 1 and 40 MHz, 展开更多
关键词 inorganic nonmetallic material sintering temperature dielectric properties rare earths
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Microstructure and electrical properties of Ti-modified (Na_(0.5)K_(0.5))(Ti_xNb_(1-x))O_3 lead-free piezoelectric ceramics 被引量:1
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作者 Zhang, Qian Zhang, Boping +2 位作者 Zhao, Pei Li, Haitao Zhang, Limin 《Rare Metals》 SCIE EI CAS CSCD 2009年第2期142-146,共5页
Ti-Modified (Na0.5K0.5)(TixNb1-x)O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buried powder process at 1020°C for 2 h. The microstructures,and piezoelectric and dielectric properties of the le... Ti-Modified (Na0.5K0.5)(TixNb1-x)O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buried powder process at 1020°C for 2 h. The microstructures,and piezoelectric and dielectric properties of the lead-free NKNT ceramics were investigated. X-ray diffraction re-sults indicated that Ti4+ had diffused into the (Na0.5K0.5)NbO3 lattices to form a solid solution with a perovskite structure. The introducing of Ti into the (Na0.5K0.5)NbO3 solid solution effectively reduced the sintering temperature and densified the microstructure with a decreased grain size. The highest relative density reached more than 90%. The highest piezoelectric dielectric coefficient d33 and planar mode electro-mechanical coupling coefficient kp were 110 pC/N and 19.5%,which were obtained in the NKNT ceramic with 1 mol% Ti. The piezoelectric properties of the NKNT ceramics were enhanced by aging in air for a period of time owing to the compensation of oxygen vacancies. 展开更多
关键词 lead-free piezoelectric ceramics TI-DOPED piezoelectric property dielectric property normal sintering oxygen vacancies
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纳米Al掺杂对烧结Nd-Fe-B结构与性能的影响
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作者 曹玉杰 张鹏杰 +7 位作者 孙威 徐光青 王继全 王倩 李青华 吴玉程 缪冰锋 阚绪材 《矿冶》 CAS 2023年第4期72-76,共5页
采用晶间掺杂方法将不同含量的纳米Al加入钕铁硼细粉中,制备出不同纳米Al掺杂量的烧结钕铁硼磁体。系统研究了纳米Al的掺杂对烧结钕铁硼磁体微观结构、磁性能和温度稳定性的影响。结果表明:纳米Al的掺杂可以明显提高磁体的矫顽力,其矫... 采用晶间掺杂方法将不同含量的纳米Al加入钕铁硼细粉中,制备出不同纳米Al掺杂量的烧结钕铁硼磁体。系统研究了纳米Al的掺杂对烧结钕铁硼磁体微观结构、磁性能和温度稳定性的影响。结果表明:纳米Al的掺杂可以明显提高磁体的矫顽力,其矫顽力由未掺杂纳米Al时的8.91 kOe提高到掺杂0.8%纳米Al时的12.34 kOe,但纳米Al的掺杂也会导致磁体的剩磁和磁能积的降低。纳米Al的掺杂能够改善磁体的温度稳定性。由于纳米Al的熔点低,通过掺杂纳米Al既有助于烧结磁体的液相烧结促进其致密化,又能减少块状富稀土相,增加薄片状富稀土相,起到去磁耦合作用,对于烧结磁体的磁硬化具有重要作用。 展开更多
关键词 烧结ND-FE-B 纳米AL 晶间掺杂 磁性能 温度稳定性
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烧结温度和升温速率对钛酸钡陶瓷结构及介电性能的影响
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作者 万淇通 张云飞 +3 位作者 张梦雅 梁博 邴丽娜 沈振江 《海南师范大学学报(自然科学版)》 CAS 2023年第4期400-408,共9页
采用固相法制备BaTiO_(3)陶瓷,研究了烧结温度和烧结升温速率对陶瓷试样晶体结构、微观形貌、介电性能的影响。实验表明,所制陶瓷均为四方相钙钛矿晶格结构。烧结温度低会造成较多点缺陷,随烧结温度的增大,晶体均匀度和致密性有效提高,... 采用固相法制备BaTiO_(3)陶瓷,研究了烧结温度和烧结升温速率对陶瓷试样晶体结构、微观形貌、介电性能的影响。实验表明,所制陶瓷均为四方相钙钛矿晶格结构。烧结温度低会造成较多点缺陷,随烧结温度的增大,晶体均匀度和致密性有效提高,晶粒尺寸增大有助于促进畴壁运动,介电性能有所提升。烧结升温速率过慢同样会造成点缺陷浓度增多,且有液相生成,气孔较多,气孔含量高会降低介电性能的稳定性、减小介电常数、增大介电损耗;提高升温速率同样有助于提高晶粒尺寸、均匀度和致密性,当晶粒尺寸到达单畴晶粒尺寸附近时,内应力为0,90°铁电畴贡献高介电常数;但过快的升温速率会出现“过烧现象”,致使介电性能下降。当以5℃/min的烧结升温速率升温至1 275℃时,介电常数最大,介电损耗最小,其值分别为ε=2 374,tanδ=0.023 18。 展开更多
关键词 钛酸钡陶瓷 传统固相法 烧结温度 烧结升温速率 介电性能
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B_(2)O_(3)对BaZrO_(3)微波介质陶瓷材料性能的影响
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作者 崔德威 邵辉 +1 位作者 陶晨 苗健 《压电与声光》 CAS 北大核心 2023年第2期326-330,共5页
以分析纯的BaCO_(3)、ZrO_(2)、B_(2)O_(3)为原料,采用传统固相法制备了添加x%B_(2)O_(3)(质量分数x=0.5~5.0)的BaZrO_(3)微波介质陶瓷。运用扫描电子显微镜、矢量网络分析仪和X线衍射仪等实验手段研究了不同B_(2)O_(3)添加量对BaZrO_(3... 以分析纯的BaCO_(3)、ZrO_(2)、B_(2)O_(3)为原料,采用传统固相法制备了添加x%B_(2)O_(3)(质量分数x=0.5~5.0)的BaZrO_(3)微波介质陶瓷。运用扫描电子显微镜、矢量网络分析仪和X线衍射仪等实验手段研究了不同B_(2)O_(3)添加量对BaZrO_(3)陶瓷微观结构、相组成及微波介电性能的影响。结果表明,随着B_(2)O_(3)添加量的增加,材料致密烧结温度降低,介电常数减小,介电损耗降低。当B_(2)O_(3)添加量超过1%时,有BaZr(BO_(3))2相析出。在B_(2)O_(3)添加量为3%,烧结温度为1300℃时,BaZrO_(3)陶瓷获得优异的微波介电性能:介电常数εr=33.02,品质因数与频率之积Q×f=32761 GHz,谐振频率温度系数τf=+152×10^(-6)/℃。 展开更多
关键词 介电性能 BaZrO_(3) 微波介质陶瓷 低温烧结
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MnO_(2)-CuO-TiO_(2)共掺Al_(2)O_(3)陶瓷低温烧结和微波介电性能的研究
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作者 林聪毅 陶宏磊 李蔚 《硅酸盐通报》 CAS 北大核心 2023年第10期3764-3768,共5页
作为重要微波介质材料之一,Al_(2)O_(3)陶瓷介电性能优良,在微波电路方面得到广泛应用。但Al_(2)O_(3)陶瓷的烧结温度较高,制备工序需消耗大量能源。低成本降低烧结温度对Al_(2)O_(3)陶瓷的进一步发展具有重要意义。本论文通过MnO_(2)-C... 作为重要微波介质材料之一,Al_(2)O_(3)陶瓷介电性能优良,在微波电路方面得到广泛应用。但Al_(2)O_(3)陶瓷的烧结温度较高,制备工序需消耗大量能源。低成本降低烧结温度对Al_(2)O_(3)陶瓷的进一步发展具有重要意义。本论文通过MnO_(2)-CuO-TiO_(2)掺杂实现了Al_(2)O_(3)陶瓷的低温烧结,并对其烧结行为和微波介电性能进行了研究。结果表明,MnO_(2)、CuO、TiO_(2)的质量分数分别为0.7%、0.5%、0.8%时,复合掺杂可以大幅降低Al_(2)O_(3)陶瓷的烧结温度,所获陶瓷具有良好的微波介电性能。在烧结温度为1250℃时,Al_(2)O_(3)陶瓷的密度可达3.92 g/cm^(3),介电常数εr=10.02,品质因子与谐振频率的乘积Q×f值为51239 GHz。Ti^(4+)、Mn^(4+)、Cu^(2+)固溶导致Al_(2)O_(3)晶格扭曲活化,以及低共熔物形成是促进Al_(2)O_(3)陶瓷低温烧结的原因。 展开更多
关键词 Al_(2)O_(3)陶瓷 MnO_(2)-CuO-TiO_(2) 低温烧结 微波介电性能 掺杂
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Ce掺杂0.94MgTiO_(3)-0.06(Ca_(0.8)Sr_(0.2))TiO_(3)陶瓷的制备及微波介电性能
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作者 张帆 石桐 +2 位作者 李金睿 王新 杨云洪 《沈阳工业大学学报》 CAS 北大核心 2023年第4期411-417,共7页
为了提高MgTiO_(3)-(Ca_(0.8)Sr_(0.2))TiO_(3)(MT-CST)微波介质陶瓷的品质因数,通过SEM、XRD、拉曼光谱仪与XPS分析手段,研究了Ce掺杂对MT-CST陶瓷成分晶体结构和微波介电性能的影响.结果表明:高价Ce^(3+)取代Mg^(2+)可使氧空位缺陷得... 为了提高MgTiO_(3)-(Ca_(0.8)Sr_(0.2))TiO_(3)(MT-CST)微波介质陶瓷的品质因数,通过SEM、XRD、拉曼光谱仪与XPS分析手段,研究了Ce掺杂对MT-CST陶瓷成分晶体结构和微波介电性能的影响.结果表明:高价Ce^(3+)取代Mg^(2+)可使氧空位缺陷得到有效抑制,从而降低了微波介质损耗,可使品质因数得到较大提升.制备的陶瓷具有优异的微波介电性能:介电常数为20.8,品质因数为61000 GHz,谐振频率温度系数为-4.99×10^(-6)/℃. 展开更多
关键词 MgTiO_(3)-(Ca_(0.8)Sr_(0.2))TiO_(3)陶瓷 CE掺杂 纳米粉体 化学沉淀法 低温烧结 氧空位补偿 品质因数 微波介电性能
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MgF_(2)掺杂对0.95MgTiO_(3)-0.05CaTiO_(3)陶瓷结构与微波性能的影响
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作者 冉文 刘凡 +1 位作者 李昊 刘绍军 《粉末冶金材料科学与工程》 2023年第3期253-261,共9页
采用传统固相合成法制备Mg F_(2)掺杂0.95MgTiO_(3)-0.05CaTiO_(3)(95MCT)微波陶瓷,结合X射线衍射谱、拉曼光谱、X射线光电子能谱、扫描电镜及矢量网络分析等表征技术,系统研究Mg F_(2)掺杂对95MCT陶瓷烧结温度、晶体结构、微观形貌与... 采用传统固相合成法制备Mg F_(2)掺杂0.95MgTiO_(3)-0.05CaTiO_(3)(95MCT)微波陶瓷,结合X射线衍射谱、拉曼光谱、X射线光电子能谱、扫描电镜及矢量网络分析等表征技术,系统研究Mg F_(2)掺杂对95MCT陶瓷烧结温度、晶体结构、微观形貌与微波性能的影响。结果表明:少量Mg F_(2)掺杂能够促进陶瓷晶粒均匀生长,抑制Ti^(4+)离子向Ti^(3+)离子转变,增强[TiO_(6)]八面体中Ti—O键的结合强度,从而使95MCT陶瓷的品质因子由30 335 GHz提高至89 470 GHz。1 225℃烧结的Mg F_(2)质量分数为1%的95MCT陶瓷具有优异的综合微波性能:相对介电常数ε_(r)约为19.74,品质因子Q×f值约为89 470 GHz,谐振频率温度系数τ_(f)约为-10.2×10^(-6)℃^(-1)。 展开更多
关键词 MgTiO_(3)-CaTiO_(3)陶瓷 MgF_(2)掺杂 [TiO_(6)]八面体 烧结温度 微波性能
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烧结温度对Ba_(0.96)Ca_(0.04)Ti_(2)O_(5)陶瓷的物相结构与电学性能影响探究
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作者 田永尚 马明扬 +3 位作者 李水云 董俊丽 穆歌 王进双 《信阳师范学院学报(自然科学版)》 CAS 北大核心 2023年第2期208-212,共5页
在改性Pechini法制备Ba_(0.96)Ca_(0.04)Ti_(2)O_(5)(BCT2)粉体的基础上,采用常压固相烧结工艺制备了BCT2陶瓷,详细探究了在不同烧结温度(1050~1250℃)下对BCT2陶瓷物相结构与性能的影响规律。采用X射线衍射仪、冷场发射扫描电子显微镜... 在改性Pechini法制备Ba_(0.96)Ca_(0.04)Ti_(2)O_(5)(BCT2)粉体的基础上,采用常压固相烧结工艺制备了BCT2陶瓷,详细探究了在不同烧结温度(1050~1250℃)下对BCT2陶瓷物相结构与性能的影响规律。采用X射线衍射仪、冷场发射扫描电子显微镜、电子比重天平和精密阻抗分析仪,分别测试了BCT2陶瓷的物相结构、断面形貌、致密化程度和电学性能。结果表明,随着烧结温度一定程度的升高,BCT2陶瓷的结晶度提升、致密化程度增加、介电性能和铁电性增强。最佳烧结温度(1200℃)下BCT2陶瓷的性能为ρ_(r)=96.64%、T_(C)=444.9℃、ε_(m)=619.3和γ=0.429。 展开更多
关键词 Ba_(0.96)Ca_(0.04)Ti_(2)O_(5) 烧结温度 物相结构 介电性能 弥散相变
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反应烧结制备Li_(2)Zn_(2)Mo_(3)O_(12)微波介质陶瓷及其微波介电性能研究
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作者 舒国劲 窦占明 +4 位作者 喻振宁 刘凯 周坤卓 申懿婷 庞锦标 《材料导报》 CSCD 北大核心 2023年第S01期123-125,共3页
采用反应烧结法制备了具有超低烧结温度的Li_(2)Zn_(2)Mo_(3)O_(12)微波介质陶瓷,研究了烧结温度对Li_(2)Zn_(2)Mo_(3)O_(12)陶瓷的烧结特性、物相组成、微观结构以及微波介电性能的影响。XRD表明:在550~650℃范围内,温度对陶瓷的物相... 采用反应烧结法制备了具有超低烧结温度的Li_(2)Zn_(2)Mo_(3)O_(12)微波介质陶瓷,研究了烧结温度对Li_(2)Zn_(2)Mo_(3)O_(12)陶瓷的烧结特性、物相组成、微观结构以及微波介电性能的影响。XRD表明:在550~650℃范围内,温度对陶瓷的物相组成影响不大;随着烧结温度的升高,Li_(2)Zn_(2)Mo_(3)O_(12)陶瓷的体积密度、相对密度、介电常数(ε_(r))和品质因数(Q×f)均呈先增大后减小的趋势,谐振频率温度系数(τ_(f))在-(70~90)×10^(-6)/℃波动。在625℃烧结2 h获得最大体积密度和相对密度:4.25 g/cm^(3)和96.4%,以及优异的微波介电性能ε_(r)=10.9,Q×f=69459 GHz,τ_(f)=-84×10^(-6)/℃。 展开更多
关键词 超低温烧结(ULTCC) Li_(2)Zn_(2)Mo_(3)O_(12)陶瓷 反应烧结 微波介电性能
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Co、Sm共掺杂PZN-PZT压电陶瓷的低温烧结与电性能研究
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作者 谢义磊 石棋 +2 位作者 胡学兵 何中睿 洪顺球 《中国陶瓷》 CAS CSCD 北大核心 2023年第8期30-34,共5页
试验采用传统固相法,成功制备出Co、Sm共掺杂的Pb_(0.95)Ba_(0.05)(Zn_(1/3)Nb_(2/3))_(0.2)(Zr_(0.52)Ti_(0.48))_(0.8)O_(3)+0.6mol%Co_(2)O_(3)+0.04mol%Sm_(2)O_(3)三元系压电陶瓷。研究分析了不同烧成温度下PZN-PZT压电陶瓷材料的... 试验采用传统固相法,成功制备出Co、Sm共掺杂的Pb_(0.95)Ba_(0.05)(Zn_(1/3)Nb_(2/3))_(0.2)(Zr_(0.52)Ti_(0.48))_(0.8)O_(3)+0.6mol%Co_(2)O_(3)+0.04mol%Sm_(2)O_(3)三元系压电陶瓷。研究分析了不同烧成温度下PZN-PZT压电陶瓷材料的压电性能、介电性能、相组成及其微观结构。结果显示,Co、Sm共掺杂不仅改善了PZN-PZT的压电、介电综合性能:d_(33)=301 pC/N,K_(p)=0.72,ε_(r)=1486.46,tanδ=0.11%,Q_(m)=515,而且将材料的烧成温度降低到950℃。 展开更多
关键词 Co、Sm共掺杂 PZN-PZT压电陶瓷材料 低温烧结 压电性能
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Y_(2)O_(3)掺杂及烧结温度对SrTiO_(3)基陶瓷电学性能的影响
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作者 邹远来 郭中正 +2 位作者 禄露玲 聂贞海 陈方健 《河南科技》 2023年第18期70-74,共5页
【目的】获得综合电学性能良好的SrTiO_(3)基电子功能陶瓷。【方法】选取稀土氧化物Y_(2)O_(3)作掺杂剂,用典型电子陶瓷工艺制样,利用压敏电阻参数仪和数字电桥测试并结合扫描电镜(SEM)观察,探讨了Y_(2)O_(3)的掺杂量及烧结温度对SrTiO_... 【目的】获得综合电学性能良好的SrTiO_(3)基电子功能陶瓷。【方法】选取稀土氧化物Y_(2)O_(3)作掺杂剂,用典型电子陶瓷工艺制样,利用压敏电阻参数仪和数字电桥测试并结合扫描电镜(SEM)观察,探讨了Y_(2)O_(3)的掺杂量及烧结温度对SrTiO_(3)基陶瓷电学性能和微观结构的影响规律。【结果】随着Y_(2)O_(3)掺杂量从0.3 mol.%渐增至1.8 mol.%,陶瓷的压敏电压V_(1mA)先减后增,非线性系数α逐渐减小,而相对介电常数ε_(r)和介电损耗tanδ均总体上呈升高趋势。掺0.9 mol.%Y_(2)O_(3)时,陶瓷综合电学性能较好。提高烧结温度可获得更理想的微观结构并进一步提升电学性能,经1425℃、3 h保温烧成、掺0.9 mol.%Y_(2)O_(3)的SrTiO_(3)基陶瓷的综合电学性能最优:V_(1mA)=7.2 V、α=10.8、ε_(r)=3.8×10^(4)、tanδ=2.1×10^(-2)。【结论】适量掺杂Y_(2)O_(3)并合理控制烧结温度,可使SrTiO_(3)基陶瓷具有理想的微观结构,从而表现出优良的电学性能。 展开更多
关键词 SrTiO_(3)基陶瓷 Y_(2)O_(3)掺杂 烧结温度 电学性能
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添加剂对MgTiO_3陶瓷性能的影响 被引量:8
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作者 朱海奎 刘敏 +2 位作者 周洪庆 杨春霞 梁斌 《硅酸盐通报》 CAS CSCD 北大核心 2005年第4期24-26,30,共4页
研究了H3BO3,CaO-SiO2-B2O3玻璃料及V2O5的添加对MgTiO3陶瓷的烧结和介电性能的影响,并对影响机理作了初步探讨。结果表明:合适的添加剂能够使MgTiO3陶瓷在1240~1300℃之间烧结;添加质量分数为3%的H3BO3,V2O5或1%的CaO-SiO2-B2O3玻璃料... 研究了H3BO3,CaO-SiO2-B2O3玻璃料及V2O5的添加对MgTiO3陶瓷的烧结和介电性能的影响,并对影响机理作了初步探讨。结果表明:合适的添加剂能够使MgTiO3陶瓷在1240~1300℃之间烧结;添加质量分数为3%的H3BO3,V2O5或1%的CaO-SiO2-B2O3玻璃料的MgTiO3陶瓷的介电常数分别为20.8,17.5和19.8,在5~20MHz下,介电损耗低,多为10-4数量级;在10kHz下,介电常数的温度系数在-66×10-6/℃左右,是一种性能良好的微波介质材料。 展开更多
关键词 钛酸镁 烧结温度 介电性能 MGTIO3 陶瓷性能 添加剂 H3BO3 微波介质材料 V2O5 介电常数
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