The SiS molecule,which plays a significant role in space,has attracted a great deal of attention for many years.Due to complex interactions among its low-lying electronic states,precise information regarding the molec...The SiS molecule,which plays a significant role in space,has attracted a great deal of attention for many years.Due to complex interactions among its low-lying electronic states,precise information regarding the molecular structure of SiS is limited.To obtain accurate information about the structure of its excited states,the high-precision multireference configuration interaction(MRCI)method has been utilized.This method is used to calculate the potential energy curves(PECs)of the 18Λ–S states corresponding to the lowest dissociation limit of SiS.The core–valence correlation effect,Davidson’s correction and the scalar relativistic effect are also included to guarantee the precision of the MRCI calculation.Based on the calculated PECs,the spectroscopic constants of quasi-bound and bound electronic states are calculated and they are in accordance with previous experimental results.The transition dipole moments(TDMs)and dipole moments(DMs)are determined by the MRCI method.In addition,the abrupt variations of the DMs for the 1^(5)Σ^(+)and 2^(5)Σ^(+)states at the avoided crossing point are attributed to the variation of the electronic configuration.The opacity of SiS at a pressure of 100 atms is presented across a series of temperatures.With increasing temperature,the expanding population of excited states blurs the band boundaries.展开更多
The terahertz band,a unique segment of the electromagnetic spectrum,is crucial for observing the cold,dark universe and plays a pivotal role in cutting-edge scientific research,including the study of cosmic environmen...The terahertz band,a unique segment of the electromagnetic spectrum,is crucial for observing the cold,dark universe and plays a pivotal role in cutting-edge scientific research,including the study of cosmic environments that support life and imaging black holes.High-sensitivity superconductor–insulator–superconductor(SIS)mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays.Compared to the commonly used classical Nb/AlO_(x)/Nb superconducting tunnel junction,the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density.This makes it particularly promising for the development of ultra-wideband,high-sensitivity coherent detectors or mixers in various scientific research fields.In this paper,we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions(PCTJ),which has a bandwidth extending up to490 GHz–720 GHz.The best achieved double-sideband(DSB)noise temperature(sensitivity)is below three times the quantum noise level.展开更多
Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the s...Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the significant progress in understanding the pathogenesis and management of urolithiasis,the condition remains a significant public health concern.The aim of this special issue of the Asian Journal of Urology was to provide an update on the current state of knowledge regarding the pathogenesis,diagnosis,and management of urolithiasis.展开更多
针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误...针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误操作急停及开停车频繁导致生产装置使用效率低等问题,保障了装置生产安全稳定运行和装置的生产效率。展开更多
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
基金Project supported by the Natural Science Foundation of Heilongjiang Province,China(Grant No.LH2022A026)the National Key Research and Development Program of China(Grant No.2022YFA1602500)+2 种基金the National Natural Science Foundation of China(Grant No.11934004)Fundamental Research Funds in Heilongjiang Province Universities,China(Grant No.145109309)Foundation of National Key Laboratory of Computational Physics(Grant No.6142A05QN22006)。
文摘The SiS molecule,which plays a significant role in space,has attracted a great deal of attention for many years.Due to complex interactions among its low-lying electronic states,precise information regarding the molecular structure of SiS is limited.To obtain accurate information about the structure of its excited states,the high-precision multireference configuration interaction(MRCI)method has been utilized.This method is used to calculate the potential energy curves(PECs)of the 18Λ–S states corresponding to the lowest dissociation limit of SiS.The core–valence correlation effect,Davidson’s correction and the scalar relativistic effect are also included to guarantee the precision of the MRCI calculation.Based on the calculated PECs,the spectroscopic constants of quasi-bound and bound electronic states are calculated and they are in accordance with previous experimental results.The transition dipole moments(TDMs)and dipole moments(DMs)are determined by the MRCI method.In addition,the abrupt variations of the DMs for the 1^(5)Σ^(+)and 2^(5)Σ^(+)states at the avoided crossing point are attributed to the variation of the electronic configuration.The opacity of SiS at a pressure of 100 atms is presented across a series of temperatures.With increasing temperature,the expanding population of excited states blurs the band boundaries.
基金Project supported in part by the National Key Research and Development Program of China(Grant Nos.2023YFA1608201 and 2023YFF0722301)the National Natural Science Foundation of China(Grant Nos.11925304,12020101002,12333013,12273119,and 12103093)supported by grant from the Russian Science Foundation(Grant No.23-7900019)。
文摘The terahertz band,a unique segment of the electromagnetic spectrum,is crucial for observing the cold,dark universe and plays a pivotal role in cutting-edge scientific research,including the study of cosmic environments that support life and imaging black holes.High-sensitivity superconductor–insulator–superconductor(SIS)mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays.Compared to the commonly used classical Nb/AlO_(x)/Nb superconducting tunnel junction,the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density.This makes it particularly promising for the development of ultra-wideband,high-sensitivity coherent detectors or mixers in various scientific research fields.In this paper,we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions(PCTJ),which has a bandwidth extending up to490 GHz–720 GHz.The best achieved double-sideband(DSB)noise temperature(sensitivity)is below three times the quantum noise level.
文摘Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the significant progress in understanding the pathogenesis and management of urolithiasis,the condition remains a significant public health concern.The aim of this special issue of the Asian Journal of Urology was to provide an update on the current state of knowledge regarding the pathogenesis,diagnosis,and management of urolithiasis.
基金Supported by National Natural Science Foundation of China(11925304,12020101002,11903086,11903087,11973095)Foundation of the Chinese Academy of Sciences(QYZDJ-SSW-SLH043,GJJSTD20210002)。
文摘针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误操作急停及开停车频繁导致生产装置使用效率低等问题,保障了装置生产安全稳定运行和装置的生产效率。
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.
