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Slip on the surface of silicon wafers under laser irradiation:Scale effect 被引量:1
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作者 贾志超 李泽文 +1 位作者 周洁 倪晓武 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期369-374,共6页
The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy... The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon. 展开更多
关键词 slip silicon laser scale effect
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