Slow and smooth etching of gallium nitride（GaN） by BCl;/Cl;-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the...Slow and smooth etching of gallium nitride（GaN） by BCl;/Cl;-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the flow rate of Cl;and BCl;, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl;flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively.展开更多
基金supported by the National Key R&D Program of China(No.2017YFB0403001)the National Natural Sciences Foundation of China(No.61404134)
文摘Slow and smooth etching of gallium nitride（GaN） by BCl;/Cl;-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the flow rate of Cl;and BCl;, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl;flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively.
