A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the enti...A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the entire implanted hydrogen region during annealing.The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion.The hydrogen blister radius was studied as the function of annealing time,annealing temperature and implantation dose.The critical radius was obtained according to the Griffith energy condition.The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters.展开更多
文摘A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the entire implanted hydrogen region during annealing.The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion.The hydrogen blister radius was studied as the function of annealing time,annealing temperature and implantation dose.The critical radius was obtained according to the Griffith energy condition.The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters.
