Smart machining has tremendous potential and is becoming one of new generation high value precision manufacturing technologies in line with the advance of Industry 4.0 concepts. This paper presents some innovative des...Smart machining has tremendous potential and is becoming one of new generation high value precision manufacturing technologies in line with the advance of Industry 4.0 concepts. This paper presents some innovative design concepts and, in particular, the development of four types of smart cutting tools, including a force-based smart cutting tool, a temperature-based internally-cooled cutting tool, a fast tool servo （FTS） and smart collets for ultra- precision and micro manufacturing purposes. Implemen- tation and application perspectives of these smart cutting tools are explored and discussed particularly for smart machining against a number of industrial application requirements. They are contamination-free machining, machining of tool-wear-prone Si-based infra-red devices and medical applications, high speed micro milling and micro drilling, etc. Furthermore, implementation tech- niques are presented focusing on： （a） plug-and-produce design principle and the associated smart control algo- rithms, （b） piezoelectric film and surface acoustic wave transducers to measure cutting forces in process, （c） critical cutting temperature control in real-time machining, （d） in- process calibration through machining trials, （e） FE-based design and analysis of smart cutting tools, and （f） applica- tion exemplars on adaptive smart machining.展开更多
In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI）...In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.展开更多
In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that...In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.展开更多
A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microsco...A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.展开更多
基金Supported by the UK Technology Strategy Board(TSB)(SEEM Project,Contract No.:BD266E)Innovate UK(KTP Project,Contract No.:9277)
文摘Smart machining has tremendous potential and is becoming one of new generation high value precision manufacturing technologies in line with the advance of Industry 4.0 concepts. This paper presents some innovative design concepts and, in particular, the development of four types of smart cutting tools, including a force-based smart cutting tool, a temperature-based internally-cooled cutting tool, a fast tool servo （FTS） and smart collets for ultra- precision and micro manufacturing purposes. Implemen- tation and application perspectives of these smart cutting tools are explored and discussed particularly for smart machining against a number of industrial application requirements. They are contamination-free machining, machining of tool-wear-prone Si-based infra-red devices and medical applications, high speed micro milling and micro drilling, etc. Furthermore, implementation tech- niques are presented focusing on： （a） plug-and-produce design principle and the associated smart control algo- rithms, （b） piezoelectric film and surface acoustic wave transducers to measure cutting forces in process, （c） critical cutting temperature control in real-time machining, （d） in- process calibration through machining trials, （e） FE-based design and analysis of smart cutting tools, and （f） applica- tion exemplars on adaptive smart machining.
基金the Australian Research Council (ARC),the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
文摘In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.
基金supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
文摘In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.
基金Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403)
文摘A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.
