A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side...A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT.展开更多
基金supported by Postdoctoral Innovative Talent Support Program under Grant BX20190059the China Postdoctoral Science Foundation under Grant 2019M660235+1 种基金the Sichuan Science and Technology Program under Project 2018JY0555the Science and Technology on Analog Integrated Circuit Laboratory under Project 6142802180509。
文摘A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT.
