An S-band solid-state radio frequency power amplifier used at Shanghai soft X-ray FEL facility

In this paper,we present the general design methods and parameter measurements of a 1-k W solidstate radio frequency(RF) power amplifier at 2856 MHz,for the soft X-ray free electron laser facility.Three-stage amplification with a 4-way combination is used.An RF switch module is integrated with the solid-state RF power amplifier to convert the continuous wave(CW) signal into pulse signal,with adjustable pulse width.The power gain is measured at 57.7 d B at 60 d Bm output.The RF phase noise,which is measured by the low-level RF system,is\0.015 degree(RMS),while the pulse frontier jitter is\5 ns.

Solid-state Synthesis,Crystal and Band Structures,and Optical Properties of a Novel Ternary Sulfide Eu_2Ga_2S_5

One new ternary europium gallium sulfide, Eu2Ga2S5, has been synthesized by a facile solid-state route with boron as the reducing reagent. It crystallizes in the orthorhombic space group Pbca, with a = 11.976（1）, b = 11.074（1）, c = 17.446（1）A^°, V = 1650.6（3）A^°^3, and Z = 8. Its 3-D structure is built by the connection between EuS 7 monocapped trigonal prisms and GaS 4 tetrahedra, and the latter connect with each other to form layer-like slabs. Its optical energy gap is determined to be 2.17 eV, which is also verified by the electronic band structure calculation.

Nature of the band gap of halide perovskites ABX_3(A=CH_3NH_3,Cs;B=Sn,Pb;X=Cl,Br,I):First-principles calculations

The electronic structures of cubic structure of ABX3（A=CH3NH3, Cs; B=Sn, Pb; X=Cl, Br, I） are analyzed by den- sity functional theory using the Perdew-Burke-Ernzerhof exchange-correlation functional and using the Heyd-Scuseria- Ernzerhof hybrid functional. The valence band maximum （VBM） is found to be made up by an antibonding hybridization of B s and X p states, whereas bands made up by the π antibonding of B p and X p states dominates the conduction band minimum （CBM）. The changes of VBM, CBM, and band gap with ion B and X are then systematically summarized. The natural band offsets of ABX3 are partly given. We also found for all the ABX3 perovskite materials in this study, the bandgap increases with an increasing lattice parameter. This phenomenon has good consistency with the experimental results.

Syntheses,Structures and Band Gaps of KLnSiS_4(Ln=Sm,Yb)

Two new quaternary sulfides, KSmSiS4 （1） and KYbSiS4 （2）, have been synthesized by high-temperature solid-state reaction. Single,crystal X-ray diffraction analyses indicate that both compounds crystallize in the space group P21/m, and the crystal data are as follows： a = 6.426（11）, b = 6.582（11）, c = 8.602（15）A, β= 107.90（13）°, Z = 2, V= 346.2（10） A^3, Dc = 3.317 g/cm^3, F（000） = 318,μ（MoKα） = 10.334 mm^-1, the final R = 0.0559 and wR = 0.1370 for 1; and α= 6.3244（10）, b = 6.5552（10）, c = 8.5701（15）A, β= 108.001（13）°, Z = 2, V = 337.91（9） A^3, De= 3.621 g/cm^3, F（000） = 334, μ（MoKα） = 15.737 mm^-1, the final R = 0.0422 and wR = 0.0960 for 2. The KLnSiS4 （Ln = Sm, Yb） structure consists of corrugated ∞^2 [LnSiS4]^- layers which are formed by edge-sharing LnS8 bicapped trigonal prisms and SiS4 tetrahedra. The K^＋ cations are located in the cavities defined by S2 anions between the ∞^2[LnSiS4]^- layers. Band-gap analyses show that compounds 1 and 2 are semiconductors with optical band-gaps of 2.40 and 2.34 eV, respectively.

Preparation and characterization of nanosized Gd_xBi_(0.95-x)VO_4:0.05Eu^(3+) solid solution as red phosphor

A complete solid solutions with monophasic zircon-type structure of vanadates of formula GdxBio.95-xVO4：0.05Eu3＋ （x = 04）.95） are synthesized by combined method of co-precipitation and hydrothermal synthesis. Their microstructures and morphologies are characterized by X-ray powder diffraction and transmission electronic microscope, and the results show that each of all the samples has a monophasic zircon-type structure. The absorption spectrum of the prepared phosphor shows a blue-shift of the fundamental absorption band edge with increasing the gadolinium content. Under UV-light and visible-light excitation, all the prepared phosphors show the typical luminescence properties of Eu3＋ in the zircon-type structure. The emission intensity of GdxBi0.95-xVO4：0.05Eu3＋ （x = 0.55） is strongest in all samples under UV-light and visible-light excitations. Finally, the mechanisms of luminescence of Eu3＋ in the GdxBi0.95-xVO4：0.05Eu3＋ （x = 0-0.95） solid solutions are analyzed and discussed.

Solid-State Synthesis and Effect of Temperature on Optical Properties of CuO Nanoparticles

Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material used for photovoltaic cells. Cu O is attractive as a selective solar absorber since it has high solar absorbance and a low thermal emittance. The present work describes the synthesis and characterization of semiconducting Cu O nanoparticles via one-step, solid-state reaction in the presence of Polyethylene glycol400 as size controlling agent for the preparation of Cu O nanoparticles at different temperatures. Solid-state mechanochemical processing, which is not only a physical size reduction process in conventional milling but also a chemical reaction, is mechanically activated at the nanoscale during grinding. The present method is a simple and efficient method of preparing nanoparticles with high yield at low cost. The structural and chemical composition of the nanoparticles were analyzed by X-ray diffraction, field emission scanning electron microscopy and energy-dispersive spectrometer, respectively. Optical properties and band gap of Cu O nanoparticles were studied by UV-Vis spectroscopy. These results showed that the band gap energy decreased with increase of annealing temperature, which can be attributed to the improvement in grain size of the samples.

Electrophysical propertis of solid solutions of Zn_2–x(Ti_aZr_b)_1–xFe_2xО₄

Electrophysical properties of multicomponent system Zn2TiO4–Zn2ZrO4–ZnFe2O4 were investigated. The electrical conductivity, band gap, dielectric permittivity, and molar polarizability of formed solid solutions –Zn2-x(TiaZrb)1-xFe2xO4 (x = 0 - 1.0 are defined;Δх = 0.05;a + b = 1;a:b = 1:5;1:4;1:3;1:2;1:1;2:1;3:1;4:1) were defined. Electrophysical properties of samples are in linear dependence on their composition. All the synthesized samples are semiconductors with high electrical resistivity. Was confirmed the formation of two phases of variable composition with a wide homogeneity range.

Synthesis,Crystal and Band Structures,and Optical Properties of Mercury Pnictide Halide Hg_(19)As_(10)Br_(18)

A mercury pnictide halide semiconductor Hg19As10Br18（1） has been prepared by the solid-state reaction and structurally characterized by single-crystal X-ray diffraction analysis.Compound 1 crystallizes in triclinic,space group P with a = 11.262（4）,b = 11.352（4）,c = 12.309（5） ,α = 105.724（2）,β = 105.788（4）,γ = 109.0780（10）° and V = 1314.3（8） 3.The structure of 1 is composed of parallel perovskite-like layers bridged by the linearly coordinated Br atoms to form a three-dimensional framework.The optical properties were investigated in terms of the diffuse reflectance spectrum.The electronic band structure along with density of states（DOS） calculated by DFT method indicates that compound 1 is a semiconductor with an indirect band gap,and that the optical absorption is mainly originated from the charge transitions from Br-4p and As-4p to the Hg-6s states.

一种Ka频段宽带多波束相控阵的设计

【目的】全球已步入第5代移动通信技术(5G)和卫星互联网时代,各领域对通信速率和容量的需求激增,传统抛物面和窄带平面相控阵天线系统的应用受到带宽和波束形成数量等因素的限制。文章基于相关产业领域的现状、趋势和宽带多目标的应用需求,对Ka频段宽带多波束固态相控阵技术展开了研究。【方法】文章从理论上建立并推导了相控阵天线方向图的通用矢量数学仿真模型,研究了相控阵天线的子阵划分、孔径效应和渡越时间等问题,设计了基于阵元级电移相与子阵级光延时相结合的宽带多波束相控阵系统。前端单个集成子阵采用不同材料基板的三维高密度异构瓦式集成方案,极大地提高了子阵集成度;子阵后级采用基于光开关、高精度光纤延迟线和波分复用等技术相结合的光真时延(OTTD)方法,实现了子阵级的多通道延时和多波束合成。【结果】通过对Ka频段宽带多波束接收相控阵系统原理样机进行集成与测试,验证了原理样机克服了孔径渡越时间和波束偏斜等带宽限制问题。原理样机可实现对Ka频段8个独立接收波束的宽角度扫描,每个接收波束的最高数据传输率可达1500 Mbit/s。【结论】测试结果证明,文章所提系统具有集成度高、带宽大和可形成多个独立波束等优势。研究成果将有助于促进宽带多波束固态相控阵的进一步发展,为Ka频段宽带多目标相控阵的后续工程化和产品化奠定了理论和实践基础。

物质点法流固交互表面细节优化算法

为了增强现有物质点法流固交互中表面细节,同时改进大量固体粒子对其表面重建没有贡献的问题,提出一种高效的流固交互自适应物质点法.首先使用一种接触面离散积分点方法解决物质点法中出现的数值黏性伪影问题,实现流固移动接触面上粒子的自由滑动;然后引入自适应广义插值方法,在流体和固体的不同区域自适应地调整网格分辨率,增强表面细节;最后采用窄带仿射粒子网格方法,通过粒子重采样减少固体内部粒子数量,从而在节省内存空间的同时减少计算量.利用斯坦福开源模型进行多组消融实验,结果表明,与均匀背景网格物质点法相比,所提方法流固交互表面细节更丰富,消融实验场景下整体粒子数减少80%,平均模拟效率提高50%.

RE(La,Ce)对Fe经Bain转变路径马氏体相变的影响

探究稀土(RE)对铁基合金相变的影响在含稀土先进高强度钢的开发过程中具有重要意义。文章利用第一性原理计算从驱动力和最小能量路径两方面研究了La和Ce对钢马氏体相变的影响。对形成能的计算表明,RE取代部分Fe原子增加了fcc-Fe的稳定性,降低了bcc-Fe的稳定性,从而降低了马氏体相变驱动力。同时,对固态微动弹性带方法的分析表明,在含RE的体系中,当相变沿着Bain转变路径进行到c/a比为1.14的FM态时,会出现一个额外的能垒,这与RE原子轨道与近邻Fe原子轨道之间的杂化导致磁矩骤降有关。

X波段10 kW固态发射机的设计与实现

基于GaN材料的诸多优点,提出一种国产GaN功率器件的X波段10 kW固态发射机的设计与实现方法。首先完成固态发射机的设计,包括射频放大链路、电源、控制保护、冷却和环控等;然后采用失配合成方法实现发射机的输出功率可调。该方法易于工程实现,可靠性高,对类似设备的设计有一定的参考意义。

固体物理中能带结构的可视化数值实验设计

考虑到常用的固体物理教材中缺乏对晶体能带结构在实空间的讨论,本文以一维周期性势为例,介绍在研讨课教学中针对任意周期性晶格结构的能带求解问题设计数值实验,以帮助学生建立固体能带形成的物理图像,对相关凝聚态理论课程很有参考价值.

一种U波段功率放大器的研制

本文设计并分析了一种基于波导空间功率合成技术的U波段(40—60 GHz)功率放大器,采用E面T型结功率分配/合成结构和波导-微带转换实现宽带、低损耗的四路功率合成网络,建模仿真优化后加工制造实物,在全频段内测得无源背靠背损耗小于1.3 dB,与仿真结果吻合较好。装配4片某国产放大芯片后实测得在40—60 GHz内饱和输出功率大于37.8 dBm(6.03 W),其中在40—54 GHz内输出功率优于40 dBm(10 W),与输入功率相比,增益为7 dB左右,合成效率超过了80%。

科学研究融入固体物理教学的探索与实践

前沿科学技术融入教学是实现专业知识从学习、应用到创新的重要途径.本文将热电材料科学研究融入到固体物理教学中,利用热电材料研究前沿促进固体物理中晶体结构、晶体的结合、晶格振动与晶体的热学性质、自由电子论和能带理论等基础知识的教学和思考,加强学生对固体物理基础知识的理解、激发学习兴趣,拓展知识层次,培养学生将基础知识用于解决实际问题的科学思维和能力,提高了教学质量.

一种L波段国产GaN固态雷达发射机

为了应对国产雷达所有元器件均国产化需求,设计了一款工作频点在1.2GHZ~1.4 GHz的国产氮化镓(gallium nitride,GaN)固态雷达发射机。使用国产GaN功率模块对发射系统最大限度地进行小型化设计,降低组件的重量,加强设备的高可靠性及维护方便性设计,进一步完善GaN功率模块在线测试功能,使产品具有高可靠性和完善的雷达故障诊断功能。增加系统的监控、检测及显示功能,并将各种工作状态信号都传输到主监控上,使系统的各种工作状态都能够在终端上显示,使操作人员通过终端界面便可以检查发射系统的各种工作参数,判断发射机的工作状态。在电磁兼容方面通过谐波滤波器对二次谐波的抑制,测试结果表明,发射系统输出信号的二次谐波小于等于-66dB。

一种S波段国产GaN固态雷达发射机

为了应对国产化需求,设计了一款工作频点在2.7到2.9 GHz的国产氮化镓(GaN)固态雷达发射机。设计的发射系统A、B两路发射机各自可以单独工作。当一路工作出现故障,能够自动切换到另外一路,不会造成中断停机。发射系统的组成部件位于发射机柜和电源机柜里,通过接收来自发射监控系统的控制命令,执行发射监控系统的命令并完成对发射电源及发射组件的控制,完成功率数据、电流电压等数据的采集,同时也将本系统中各主要部件的工作状态和故障信息回馈监控系统。

基于GGA算法磁记忆检测模型的研究

磁记忆法可以对铁磁性材料应力集中区域进行有效的检测,但是,磁记忆现象产生的物理本质尚没有定论,无法实现定量化测量。为了研究磁记忆信号的定量变化规律,利用固体能带理论,建立了磁记忆检测模型,采用广义梯度(GGA)算法计算电子自旋条件下,外力场作用和掺杂作用对材料磁记忆特性的影响。研究结果表明:外力作用下,电子自旋态密度分布和晶体能带结构发生变化是磁记忆现象产生的基础。压应力增加,磁记忆信号线性增大;拉应力增加,磁记忆信号线性减小。此外,掺杂作用会影响材料的磁特性,但不会影响磁记忆信号的变化规律。

不同起爆方式下炸药驱动柱壳膨胀断裂的数值模拟

采用数值模拟方法,研究不同起爆方式下内部炸药对金属柱壳的加载历程差别。计算结果表明,不同起爆方式下柱壳内表所经受的压力载荷、做功历史显著不同,分析了引起差异的原因。提出一种半解耦数值方法,使柱壳网格划分得更细,可以模拟不同起爆方式下柱壳的膨胀破坏过程,通过理论分析说明了这种方法的合理性。

金属柱壳在爆炸加载断裂中的单旋现象

系列实验结果表明,在较强的滑移爆轰加载下,许多金属材料的旋转柱壳会呈现一种奇特的单旋剪切失稳破坏模式———受驱动壳壁结构上众多剪切滑移带及断口取向一致化,在45°和135°两族剪切带中,出现一族占优的现象。通过高速分幅和X光照相对剪切裂纹在壳壁内、外表的生成发展图像的记录和碎片样品回收,结合过程应力分析,对微剪切断裂发展过程中环向和纵向关联的可能机制进行了分析讨论,但疑点仍较多。在分析柱壳的高应变率失稳行为时,对于与加载条件及几何构形紧密耦合的材料动载剪切强度、各向异性性质所扮演的角色需要进一步认识。剪切断裂的单旋与聚能罩内层无破坏的射流整体旋转现象表现方式和程度虽有差异,但可能有着共同本质,值得深入探索。