Incomplete charge transfer in CMOS image sensor caused by Si/SiO_(2)interface states in the TG channel

CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in the charge transfer path,which reduces the charge transfer efficiency and image quality.Until now,scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition.However,the existing models have thus far ignored the charge transfer limitation due to Si/SiO_(2)interface state traps in the transfer gate channel,particularly under low illumination.Therefore,this paper proposes,for the first time,an analytical model for quantifying the incomplete charge transfer caused by Si/SiO_(2)interface state traps in the transfer gate channel under low illumination.This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution,exponential distribution and measured distribution.The model was verified with technology computer-aided design simulations,and the results showed that the simulation results exhibit the consistency with the proposed model.

Application of Zero-Watermarking for Medical Image in Intelligent Sensor Network Security

The field of healthcare is considered to be the most promising application of intelligent sensor networks.However,the security and privacy protection ofmedical images collected by intelligent sensor networks is a hot problem that has attracted more and more attention.Fortunately,digital watermarking provides an effective method to solve this problem.In order to improve the robustness of the medical image watermarking scheme,in this paper,we propose a novel zero-watermarking algorithm with the integer wavelet transform(IWT),Schur decomposition and image block energy.Specifically,we first use IWT to extract low-frequency information and divide them into non-overlapping blocks,then we decompose the sub-blocks by Schur decomposition.After that,the feature matrix is constructed according to the relationship between the image block energy and the whole image energy.At the same time,we encrypt watermarking with the logistic chaotic position scrambling.Finally,the zero-watermarking is obtained by XOR operation with the encrypted watermarking.Three indexes of peak signal-to-noise ratio,normalization coefficient(NC)and the bit error rate(BER)are used to evaluate the robustness of the algorithm.According to the experimental results,most of the NC values are around 0.9 under various attacks,while the BER values are very close to 0.These experimental results show that the proposed algorithm is more robust than the existing zero-watermarking methods,which indicates it is more suitable for medical image privacy and security protection.

A Low-Power-Consumption 9bit 10MS/s Pipeline ADC for CMOS Image Sensors

A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.

Numerical Simulation and Analysis of Bipolar Junction Photogate Transistor for CMOS Image Sensor

A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.

A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique

A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.

Dark output characteristic of γ-ray irradiated CMOS digital image sensors

The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.

Weld pool image sensor for pulsed MIG welding

Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device （CPLD） based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language （VHDL） and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired.

Pixel and Column Fixed Pattern Noise Suppression Mechanism in CMOS Image Sensor

A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.

High performance active image sensor pixel design with circular structure oxide TFT

We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.

Fabrication of PdSe2/GaAs Heterojunction for Sensitive Near-Infrared Photovoltaic Detector and Image Sensor Application

In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.

Area-Efficient Low Power CMOS Image Sensor Readout Circuit with Fixed Pattern Noise Cancellation

A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...

Palladium nanoparticles/wool keratin-assisted carbon composite-modified flexible and disposable electrochemical solid-state pH sensor

Several p H-dependent processes and reactions take place in the human body;hence,the p H of body fluids is the best indicator of disturbed health conditions.However,accurate and real-time diagnosis of the p H of body fluids is complicated because of limited commercially available p H sensors.Hence,we aimed to prepare a flexible,transparent,disposable,userfriendly,and economic strip-based solid-state p H sensor using palladium nanoparticles(Pd NPs)/N-doped carbon(NC)composite material.The Pd NPs/NC composite material was synthesized using wool keratin(WK)as a precursor.The insitu prepared Pd NPs played a key role in the controlled switching of protein structure to the N-doped carbon skeleton withπ–πarrangement at the mesoscale level,which mimics the A–B type polymeric structure,and hence,is highly susceptible to H+ions.The optimized carbonization condition in the presence of Pd NPs showed that the material obtained using a modified Ag/Ag Cl reference electrode had the highest p H sensitivity with excellent stability and durability.The optimized p H sensor showed high specificity and selectivity with a sensitivity of 55 m V/p H unit and a relative standard deviation of 0.79%.This study is the first to synthesize Pd NPs using WK as a stabilizing and reducing agent.The applicability of the sensor was investigated for biological samples,namely,saliva and gastric juices.The proposed protocol and material have implications in solid-state chemistry,where biological material will be the best choice for the synthesis of materials with anticipated performance.

A nano-metallic-particles-based CMOS image sensor for DNA detection

In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.

Modeling the photon counting and photoelectron counting characteristics of quanta image sensors

A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs.

A Plant Image Compression Algorithm Based on Wireless Sensor Network

This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, high-availability image compression algorithm. This algorithm mainly has two aspects of improvement measures: the first is to reduce the number of pixels that transmit images, from interlaced scanning to interlaced neighbor scanning;the second is to use JPEG image compression algorithm [1], changing the value of the quantization table in the algorithm [2]. After image compression, the image data volume is greatly reduced;the transmission efficiency is improved;and the problem of excessive data volume during image transmission is effectively solved.

Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.

An Approach to Star Map Simulation for Star Sensor Considering the Effect of Image Motion

To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotation of Starlight vector is studied. Secondly, with the help of the normal distribution of static star image energy model, introducing the star image motion speed, obtaining the energy distribution function of moving stars, implementing high dynamic simulation of star map. Finally, establishing the simulation environment, through adjusting input parameters such as integral time, rate of change of three attitude angle, the launch time, location, then, important simulation data of stars observed by star sensor in orbit can quickly be obtained, such as navigation stars information, value and direction of image motion, intensity distribution, signal to noise ratio. This work is very important to research and evaluate the star image motion compensation algorithm.

Time-dependent crosstalk effects for image sensors with different isolation structures

Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode （PD） and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor

High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting the technology of correlated double sample.A simple column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor is proposed in this paper.Based on the bottom plate sampling and fixed common level method,this novel design can avoid the offset nonuniformity between the two buffers.Also,the single buffer and switched capacitor technique can effectively suppress the charge sharing caused by the varied operating point.The proposed approach is experimentally verified in a 1024×1024 prototype chip designed and fabricated in 55 nm low power CMOS process.The measurement results show that the linear range is extended by 20%,the readout noise of bright and dark fields is reduced by 40%and 30%respectively,and the improved photo response nonuniformity is up to 1.16%.Finally,a raw sample image taken by the prototype sensor shows the excellent practical performance.