Self-Mixing Interference Effects in LD Pumped Multi-Mode Solid-State Laser

Based on the effective structure of the self-mixing interference effects,a general model for the self-mixing interference effects in the LD pumped solid-state laser has been established for the first time.The numerical simulation of the self-mixing interference signal has been done,the results show that when the external cavity length is integral times of 1/2,1/3,2/3,1/4,3/4 of the effective cavity length,the intensity of the self-mixing interference signals reach maximum in value.While that of single mode laser is integral times of half of the effective cavity length,the measuring precision of displacement of single mode laser is λ/2.A conclusion can be drawn from the above results that the measuring precision of displacement of multi-mode laser is higher than that of single mode laser.

Analytical modelling of end thermal coupling in a solid-state laser longitudinally bonded by a vertical-cavity top-emitting laser diode

The intrinsic features involving a circularly symmetric beam profile with low divergence, planar geometry as well as the increasingly enhanced power of vertical-cavity surface-emitting lasers （VCSELs） have made the VCSEL a promising pump source in direct end bonding to a solid-state laser medium to form the minimized, on-wafer integrated laser system. This scheme will generate a surface contact pump configuration and thus additional end thermal coupling to the laser medium through the joint interface of both materials, apart from pump beam heating. This paper analytically models temperature distributions in both VCSEL and the laser medium from the end thermal coupling regarding surface contact pump configuration using a top-emitting VCSEL as the pump source for the first time. The analytical solutions are derived by introducing relative temperature and mean temperature expressions. The results show that the end contact heating by the VCSEL could lead to considerable temperature variations associated with thermal phase shift and thermal lensing in the laser medium. However, if the central temperature of the interface is increased by less than 20 K, the end contact heating does not have a significant thermal influence on the laser medium. In this case, the thermal effect should be dominated by pump beam heating. This work provides useful analytical results for further analysis of hybrid thermal effects on those lasers pumped by a direct VCSEL bond.

High-Power Continuous-Wave Nd:GdVO4 Solid-State Laser Dual-End-Pumped at 880 nm

A high-power cw all-solid-state Nd：GdVO4 laser operating at 88Onto is reported. The laser consists of a low doped level Nd：GdV04 crystal dual-end-pumped by two high-power diode lasers and a compact negative confocM unstable-stable hybrid resonator. At an incident pump power of 820 W, a maximum cw output of 240 W at 1064nm is obtained. The optical-to-optical efficiency and Mope efficiency are 40.7% and 53.2%, respectively. The M2 factors in the unstable direction and in the stable direction are 4.38 and 5.44, respectively.

0.6μm CMOS Laser Diode Driver for Optical Access Networks

Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.

Implementation of a DC-10Mb/s 0.5μm CMOS Laser Diode Driver

A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.

A 10 Gb/s laser diode driver in 0.35 μm SiGe BiCMOS technology

This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-μm GaAs E-mode pHEMT technology

This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).

Laser Driver for Optic Fiber Gyro with 4 mA to 200 mA Drive Current

Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive current is expected to be as wide as possible to be applied to different kinds of lasers. In this paper, a high current laser driver for the superluminescent light emitting diode （SLED） is presented, which is used in the optic fiber gyro embedded by a 0.35 μm bipolar complementary metal-oxide-semiconductor transistor （BiCMOS） process. The laser driver provides automatic power control and certain value of current determined by the external resister. The system is based on the optic-electric feedback theory and uses the closed-loop control technique to maintain the drive current stable. The system is capable of producing stable current ranges from 4 mA to 200 mA when the value of external resister changes.

A 155 Mbps laser diode driver with automatic power and extinction ratio control

An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.

Direct Kerr-lens mode-locked Tm:LuYO_(3) ceramic laser

A direct Kerr-lens mode-locked Tm:LuYO_(3)ceramic laser without the aid of any mode-locked starting element is reported for the first time. A pulse duration as short as 259 fs and a maximum average output power of 326 m W are obtained at a repetition rate of 97.1 MHz. The corresponding optical spectrum centered at 2053 nm exhibits a bandwidth of 19.8 nm,which indicates the presence of nearly Fourier transform-limited pulses. Such a Kerr-lens mode-locked Tm:LuYO_(3)ceramic laser is a promising ultrashort pulse source, with both the excellent laser characteristics of Tm:LuYO3and the high-power 790 nm laser diode pumping scheme.

Drivers for High Power Laser Diodes

During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack, and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd∶YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

基于WMS的可调谐半导体激光器驱动与温控电路设计

针对可调谐半导体激光器工作时,其工作电流和工作温度的波动导致激光器的输出的波长和功率不能保持恒定的问题,设计了一套基于STM32F407为主控芯片联合FPGA的半导体激光器小型化驱动与温控电路。通过与上位机交互,系统可实现激光器驱动电流和工作温度的连续可调,使半导体激光器的输出光的波长在最佳的范围内。经过测试,系统的驱动模块电流稳定度为0.075%,电流的实际值与理论值之间的相对误差平均值为0.538%;温度电路的稳定度在0.03℃,完全满足实际应用需求。

一种多波长激光器的多模式驱动研究

介绍了一种多波长半导体激光器驱动系统的设计,该系统采用了压控电流源与PicoLAS模块混合驱动的方法,具有效率高、体积小、电路简单可靠、易于系统集成等优点,为半导体激光器的驱动设计提供了一种选择和参考。

一种纳秒级半导体激光器集成微模块

为提升半导体激光器在高重频下工作的稳定性,并满足模块高集成度的需求,研制了一款纳秒级半导体激光器集成微模块。该微模块包括半导体激光器芯片、装载激光器芯片的基板以及驱动电路。在基板侧面设计金属化过孔,将半导体激光器芯片的电极从基板侧面引出,实现了激光的垂直发射;采用球栅阵列(BGA)封装GaN HEMT和GaN驱动器,优化电路布局和半导体激光器的回流路径,减小寄生电感,实现了1 ns的发光脉冲宽度,工作重频达到了1 MHz;同时,发光脉冲信号的前沿抖动度小于60 ps,脉冲宽度抖动度小于200 ps,表明其具有较高的稳定性。最后,采用高透明、耐高温的灌封胶对该微模块实现集成化封装,整体尺寸仅为6mm×5mm×2.6mm。

Ce:GdYAG phosphor-in-glass:An innovative yellow-emitting color converter for solid-state laser lighting

Stable,efficient and high color rendering index all-inorganic color converters are urgently demanded for white laser diodes.Phosphor-in-glass(PiG),possessing the advantages of phosphors excellent quantum efficiency as well as favorable chemical and thermal stability of glass,has attracted widespread attention.There have been only very few reports of Y_(1.31)Ce_(0.09)Gd_(1.6)Al_(5)O_(12)(Ce:GdYAG)PiG for solid-state laser light-ing.Herein,a series of Ce:GdYAG PiG samples are fabricated by a simple solid-state sintering method.Impressively,the supreme internal quantum efficiency of as-prepared PiG is 91%,which is very close to original phosphors(95%).Furthermore,PiG exhibits a high thermal conductivity(1.844 W m^(−1)K^(−1))and a maximum transparency(62%).Remarkably,by changing the concentration of phosphors and the thickness of PiG samples,a luminous efficacy of 163.5 lm/W,high color rendering index of 74.8 and low correlated color temperature of 4806.8 K are achieved under blue laser irradiation.These results indicate that the Ce:GdYAG PiG samples have shown tremendous application foreground as all-inorganic color converter for solid-state laser lighting.

Laser performance upgrade for precise ICF experiment in SG-Ⅲ laser facility

The SG-Ⅲlaser facility(SG-Ⅲ)is the largest laser driver for inertial confinement fusion(ICF)researches in China,which has 48 beamlines and can deliver 180 kJ ultraviolet laser energy in 3 ns.In order to meet the requirements of precise physics experiments,some new functionalities need to be added to SG-Ⅲand some intrinsic laser performances need upgrade.So at the end of SG-Ⅲ's engineering construction,the 2-year laser performance upgrade project started.This paper will introduce the newly added functionalities and the latest laser performance of SG-Ⅲ.With these function extensions and performance upgrade,SG-Ⅲis now fully prepared for precise ICF experiments and solidly paves the way towards fusion ignition.

33 W quasi-continuous-wave narrow-band sodium D_(2a) laser by sum-frequency generation in LBO

We demonstrate an all-solid quasi-continuous-wave （QCW） narrow-band source tunable to sodium D2a line at 589.159 nm. The source is based on sum-frequency mixing between lasers at 1064 nm and 1319 nm in a LBO crystal. The 1064 nm and 1319 nm lasers are produced from two diode side-pumped Nd：YAG master oscillator power amplifier （MOPA） laser systems, respectively. A 33 W output of 589 nm laser is obtained with beam quality factor M^2 = 1.25, frequency stability better than ±0.2 GHz and linewidth less than 0.44 GHz. A prototype 589 nm laser system is assembled, and a sodium laser guided star has been successfully observed in the field test.

1.5-MHz repetition rate passively Q-switched Nd:YVO4 laser based on WS2 saturable absorber

A transmission-type tungsten disulfide（WS_2）-based saturable absorber（SA） is fabricated and applied to passively Q-switched Nd：YVO_4 laser.The WS_2 nanosheets are deposited on a quartz substrate by the vertical evaporation method.By inserting the WS2 SA into the plano-concave laser cavity,we achieve 153-ns pulses with an average output power of1.19 W at 1064 nm.To the best of our knowledge,both of them are the best results among those obtained by the Q-switched solid-state lasers with WS_2-based absorbers.The repetition rate ranges from 1.176 MHz to 1.578 MHz.As far as we know,it is the first time that MHz level Q-switched pulses have been generated in all solid state lasers based on low-dimensional materials so far.

Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-μm Tm:YLF laser

The Ho：YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho：YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Ω2 = 1.42 × 10^-20cm^2, Ω4 = 2.92 ×10^-20 cm^2, and Ω6 =1.71 ×10^-20cm^2, this paper calculated the fluorescence lifetime to be 6 ms for ^5I7→^5Is transition, and the integrated emission cross section to be 2.24 × 10^-18 cm^2. It investigates the room-temperature Ho：YAP laser end-pumped by a 1.91-μm Tm：YLF laser. The maximum output power was 4.1 W when the incident 1.91-μm pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho：YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8nm.

Quantitative analysis of C, Si, Mn, Ni, Cr and Cu in low-alloy steel under ambient conditions via laser-induced breakdown spectroscopy

A diode-pumped solid-state laser （DPSSL） with a high energetic stability and long service life is applied to ablate the steel samples instead of traditional Nd：YAG laser pumped by a xenon lamp, and several factors, such as laser pulse energy, repetition rate and argon flow rate, that influence laser-induced breakdown spectroscopy （LIBS） analytical performance are investigated in detail. Under the optimal experiment conditions, the relative standard deviations for C, Si, Mn, Ni, Cr and Cu are 3.3%-8.9%, 0.9%-2.8%, 1.2%-4.1%, 1.7%-3.0%, 1.1%-3.4% and 2.5%-8.5%, respectively, with the corresponding relative errors of 1.1%-7.9%, 1.0%-6.3%, 0.4%-3.9%, 1.5%-6.3%, 1.2%-4.0% and 1.2%-6.4%. Compared with the results of the traditional spark discharge optical emission spectrometry technique, the analytical performance of LIBS is just a little inferior due to the less stable laser-induced plasma and smaller amount of ablated sample by the laser. However, the precision, detection limits and accuracy of LIBS obtained in our present work were sufficient to meet the requirements for process analysis. These technical performances of higher stability of output energy and longer service life for DPSSL, in comparison to the Q-switch laser pumped by xeon lamp, qualify it well for the real time online analysis for different industrial applications.