The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.Acc...The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.展开更多
An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT...An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.展开更多
Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkins...Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.展开更多
仿真分析了由于高功率放大器(High Power Amplifier,HPA)的非线性失真对OFDM信号造成的影响,设计了基于清华大学DMB-T高清晰度数字电视标准的SSPA(Solid State Power Amplifier)3W功放,利用了多项式拟合及FPGA技术,考虑到曲线拟合误差和...仿真分析了由于高功率放大器(High Power Amplifier,HPA)的非线性失真对OFDM信号造成的影响,设计了基于清华大学DMB-T高清晰度数字电视标准的SSPA(Solid State Power Amplifier)3W功放,利用了多项式拟合及FPGA技术,考虑到曲线拟合误差和HPA的特性,采用了分段拟合,硬件实现了SSPA的预失真,可将带外功率失真降低约10dB左右,在很大程度上抑制了带外及带内失真。展开更多
基金supported by the ‘‘strategic priority research program’’ of the Chinese Academy of Sciences(No.XDA030205)
文摘The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.
基金supported by the National Natural Science Foundation of China(Nos.60736033,60676048).
文摘An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.
基金Project supported by the National Natural Science Foundation of China (Nos.60736033,60676048)
文摘Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.
文摘仿真分析了由于高功率放大器(High Power Amplifier,HPA)的非线性失真对OFDM信号造成的影响,设计了基于清华大学DMB-T高清晰度数字电视标准的SSPA(Solid State Power Amplifier)3W功放,利用了多项式拟合及FPGA技术,考虑到曲线拟合误差和HPA的特性,采用了分段拟合,硬件实现了SSPA的预失真,可将带外功率失真降低约10dB左右,在很大程度上抑制了带外及带内失真。
