Performance of entanglement-assisted quantum codes with noisy ebits over asymmetric and memory channels

Entanglement-assisted quantum error correction codes(EAQECCs)play an important role in quantum communications with noise.Such a scheme can use arbitrary classical linear code to transmit qubits over noisy quantum channels by consuming some ebits between the sender(Alice)and the receiver(Bob).It is usually assumed that the preshared ebits of Bob are error free.However,noise on these ebits is unavoidable in many cases.In this work,we evaluate the performance of EAQECCs with noisy ebits over asymmetric quantum channels and quantum channels with memory by computing the exact entanglement fidelity of several EAQECCs.We consider asymmetric errors in both qubits and ebits and show that the performance of EAQECCs in entanglement fidelity gets improved for qubits and ebits over asymmetric channels.In quantum memory channels,we compute the entanglement fidelity of several EAQECCs over Markovian quantum memory channels and show that the performance of EAQECCs is lowered down by the channel memory.Furthermore,we show that the performance of EAQECCs is diverse when the error probabilities of qubits and ebits are different.In both asymmetric and memory quantum channels,we show that the performance of EAQECCs is improved largely when the error probability of ebits is reasonably smaller than that of qubits.

Performance Evaluation of Composite Electrolyte with GQD for All-Solid-State Lithium Batteries

The use a stabilized lithium structure as cathode material for batteries could be a fundamental alternative in the development of next-generation energy storage devices.However,the lithium structure severely limits battery life causes safety concerns due to the growth of lithium(Li)dendrites during rapid charge/discharge cycles.Solid electrolytes,which are used in highdensity energy storage devices and avoid the instability of liquid electrolytes,can be a promising alternative for next-generation batteries.Nevertheless,poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations.In this study,through the application of a low-dimensional graphene quantum dot(GQD)layer structure,stable operation characteristics were demonstrated based on Li^(+)ion conductivity and excellent electrochemical performance.Moreover,the device based on the modified graphene quantum dots(GQDs)in solid state exhibited retention properties of 95.3%for 100 cycles at 0.5 C and room temperature(RT).Transmission electronmicroscopy analysis was performed to elucidate the Li^(+)ion action mechanism in the modified GQD/electrolyte heterostructure.The low-dimensional structure of theGQD-based solid electrolyte has provided an important strategy for stably-scalable solid-state lithium battery applications at room temperature.It was demonstrated that lithiated graphene quantum dots(Li-GQDs)inhibit the growth of Li dendrites by regulating the modified Li^(+)ion flux during charge/discharge cycling at current densities of 2.2–5.5 mA cm,acting as a modified Li diffusion heterointerface.A full Li GQDbased device was fabricated to demonstrate the practicality of the modified Li structure using the Li–GQD hetero-interface.This study indicates that the low-dimensional carbon structure in Li–GQDs can be an effective approach for stabilization of solid-state Li matrix architecture.

Memory-Occupied Routing Algorithms for Quantum Relay Networks

Quantum transmission experiments have shown that the success-ful transmission rate of entangled quanta in optical fibers decreases expo-nentially.Although current quantum networks deploy quantum relays to establish long-distance connections,the increase in transmission distance and entanglement switching costs still need to be considered when selecting the next hop.However,most of the existing quantum network models prefer to consider the parameters of the physical layer,which ignore the influence factors of the network layer.In this paper,we propose a meshy quantum network model based on quantum teleportation,which considers both net-work layer and physical layer parameters.The proposed model can reflect the realistic transmission characteristics and morphological characteristics of the quantum relay network.Then,we study the network throughput of different routing algorithms with the same given parameters when multiple source-destination pairs are interconnected simultaneously.To solve the chal-lenges of routing competition caused by the simultaneous transmission,we present greedy memory-occupied algorithm Q-GMOA and random memory-occupied algorithm Q-RMOA.The proposed meshy quantum network model and the memory-occupied routing algorithms can improve the utilization rate of resources and the transmission performance of the quantum network.And the evaluation results indicate that the proposed methods embrace a higher transmission rate than the previous methods with repeater occupation.

200-nm long TiO_2 nanorod arrays for efficient solid-state Pb S quantum dot-sensitized solar cellsR

To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer, a rutile TiO2 nanorod array with a length of 200 nm, a diameter of 20 nm and an areal density of 720 ram 2 was successfully prepared using a hydrothermal method with an aqueous-grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 ℃ for 75 min. PbS quantum dots were deposited by a spin coating-assisted successive ionic layer adsorption and reaction （spin-SILAR）, and all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells were fabricated using spiro-OMeTAD as electrolytes. The results revealed that the average crystal size of PbS quantum dots was -78 nm using Pb（NO3）2 as the lead source and remain unchanged with the increase of the number of spin-SILAR cycles. The all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells with spin-SILAR cycle numbers of 20, 30 and 40 achieved the photoelectric conversion efficiencies of 3.74%, 4.12% and 3.11%, respectively, under AM 1.5 G illumination （100 mW/cm2）.

Supplemental Materials: Realization of Quantum Maxwell's Demon with Solid-State Spins

We report experimental realization of a quantum version of Maxwell＇s demon using solid state spins where the information acquiring and feedback operations by the demon are achieved through conditional quantum gates.A unique feature of this implementation is that the demon can start in a quantum superposition state or in an entangled state with an ancilla observer. Through quantum state tomography, we measure the entropy in the system, demon, and the ancilla, showing the influence of coherence and entanglement on the result. A quantum implementation of Maxwell＇s demon adds more controllability to this paradoxical thermal machine and may find applications in quantum thermodynamics involving microscopic systems.

Observation of Topological Links Associated with Hopf Insulators in a Solid-State Quantum Simulator

Hopf insulators are intriguing three-dimensional topological insulators characterized by an integer topological invariant. They originate from the mathematical theory of Hopf fibration and epitomize the deep connection between knot theory and topological phases of matter, which distinguishes them from other classes of topological insulators. Here, we implement a model Hamiltonian for Hopf insulators in a solid-state quantum simulator and report the first experimental observation of their topological properties, including nontrivial topological links associated with the Hopf fibration and the integer-valued topological invariant obtained from a direct tomographic measurement. Our observation of topological links and Hopf fibration in a quantum simulator opens the door to probe rich topological properties of Hopf insulators in experiments. The quantum simulation and probing methods are also applicable to the study of other intricate three-dimensional topological model Hamiltonians.

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

A novel flash memory cell with stacked structure （Si substrate/SiGe quantum dots/tunneling oxide/polySi floating gate） is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing. Simulation results indicate the new structure provides high speed and reliability. Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells. Memory cells with the proposed structure can achieve higher speed, lower voltage, and higher reliability.

Protecting the entanglement of two-qubit over quantum channels with memory via weak measurement and quantum measurement reversal

Based on the quantum technique of the weak measurement and quantum measurement reversal(WMR),we propose a scheme to protect entanglement for an entangled two-qubit pure state from four typical quantum noise channels with memory,i.e.,the amplitude damping channel,the phase damping channel,the bit flip channel,and the depolarizing channel.For a given initial state |Ψ>=a |00>+d|11>,it is found that the WMR operation indeed helps to protect entanglement from the above four quantum channels with memory,and the protection effect of WMR scheme is better when the coefficient a is small.For the other initial state |φ>=b|01>+c|10>,the effect of the protection scheme is the same regardless of the coefficient b and the WMR operation can protect entanglement in the amplitude damping channel with memory.Moreover,the protection of entanglement in quantum noise channels without memory in contrast to the results of the channels with memory is more effective.For |Ψ> or |φ>,we also find that the memory parameters play a significant role in the suppression of entanglement sudden death and the initial entanglement can be drastically amplified.Another more important result is that the relationship between the concurrence,the memory parameter,the weak measurement strength,and quantum measurement reversal strength is found through calculation and discussion.It provides a strong basis for the system to maintain maximum entanglement in the nosie channel.

Controlled quantum teleportation of an unknown single-qutrit state in noisy channels with memory

This paper proposes a three-dimensional(3 D) controlled quantum teleportation scheme for an unknown single-qutrit state. The scheme is first introduced in an ideal environment, and its detailed implementation is described via the transformation of the quantum system. Four types of 3 D-Pauli-like noise corresponding to Weyl operators are created by Kraus operators: trit-flip, t-phase-flip, trit-phase-flip, and t-depolarizing. Then, this scheme is analyzed in terms of four types of noisy channel with memory. For each type of noise, the average fidelity is calculated as a function of memory and noise parameters, which is afterwards compared with classical fidelity. The results demonstrate that for trit-flip and t-depolarizing noises, memory will increase the average fidelity regardless of the noise parameter. However, for t-phase-flip and trit-phaseflip noises, memory may become ineffective in increasing the average fidelity above a certain noise threshold.

Nonlocal advantage of quantum coherence in a dephasing channel with memory

We investigate nonlocal advantage of quantum coherence(NAQC)in a correlated dephasing channel modeled by themultimode bosonic reservoir.We obtain analytically the dephasing and memory factors of this channel for the reservoirhaving a Lorentzian spectral density,and analyze how they affect the NAQC defined by the l1 norm and relative entropy.It is shown that the memory effects of this channel on NAQC are state-dependent,and they suppress noticeably the rapiddecay of NAQC for the family of input Bell-like states with one excitation.For the given transmission time of each qubit,we also obtain the regions of the dephasing and memory factors during which there is NAQC in the output states.

Dynamical Suppression of Decoherence in Two-Qubit Quantum Memory

In this paper, we have detailedly studied the dynamical suppression of the phase damping for the two-qubit quantum memory of Ising model by the quantum "bang-bang" technique. We find the sequence of periodic radiofrequency pulses repetitively to flip the state of the two-qubit system and quantitatively find that these pulses can be used to effectively suppress the phase damping decoherence of the quantum memory and freeze the system state into its initial state. The general sequence of periodic radio-frequency pulses to suppress the phase damping of multi-qubit of Ising model is also given.

High-fidelity quantum memory realized via Wigner crystals of polar molecules

The collective excitations of spin states of an ensemble of polar molecules are studied as a candidate for high- fidelity quantum memory. To avoid the collisional properties of the molecules, they are arranged in dipolar crystals under one or two dimensional trapping conditions. We calculate the lifetime of the quantum memory by identifying the dominant decoherence mechanisms and estimating their effects on gate operations when a molecular ensemble qubit is transferred to a microwave cavity.

Practical decoy-state BB84 quantum key distribution with quantum memory

We generalize BB84 quantum key distribution(QKD) to the scenario where the receiver adopts a heralded quantum memory(QM). With the heralded QM, the valid dark count rate of the receiver's single photon detectors can be mitigated obviously, which will lower the quantum bit error rate, and thus improve the performance of decoy-state BB84 QKD systems in long distance range. Simulation results show that, with practical experimental system parameters, decoy-state BB84 QKD with QM can exhibit performance comparable to that of without QM in short distance range, and exhibit performance better than that without QM in long distance range.

A high-fidelity memory scheme for quantum data buses

A novel quantum memory scheme is proposed for quantum data buses in scalable quantum computers by using adjustable interaction. Our investigation focuses on a hybrid quantum system including coupled flux qubits and a nitrogen–vacancy center ensemble. In our scheme, the transmission and storage（retrieval） of quantum state are performed in two separated steps, which can be controlled by adjusting the coupling strength between the computing unit and the quantum memory. The scheme can be used not only to reduce the time of quantum state transmission, but also to increase the robustness of the system with respect to detuning caused by magnetic noises. In comparison with the previous memory scheme, about 80% of the transmission time is saved. Moreover, it is exemplified that in our scheme the fidelity could achieve 0.99 even when there exists detuning, while the one in the previous scheme is 0.75.

Controlling Entropic Uncertainty in the Presence of Quantum Memory by Non-Markovian Effects and Atom-Cavity Couplings

Based on the time-convolutionless master-equation approach, the entropic uncertainty in the presence of quantum memory is investigated for a two-atom system in two dissipative cavities. We find that the entropic uncertainty can be controlled by the non-Markovian effect and the atom-cavity coupling. The results show that increasing the atom-cavity coupling can enlarge the oscillating frequencies of the entropic uncertainty and can decrease the minimal value of the entropic uncertainty. Enhancing the non-Markovian effect can reduce the minimal value of the entropic uncertainty. In particular, if the atom-cavity coupling or the non-Markovian effect is very strong, the entropic uncertainty will be very dose to zero at certain time points, thus Bob can minimize his uncertainty about Alice＇s measurement outcomes,

Using Quantum Associative Memory to Simulate the Brain Functions

To simulate the brain functions,a quantum associative memory combined with information preprocessing by a sparse coding model is presented. The sparse coding scheme is used to simulate the information transformation from retina up to primary visual cortex (V1) along the visual path and the quantum associative memory is used to simulate the pattern processing functions of the brain such as the pattern storing,forgetting and retrieving. Experimental results show that the model exhibits good associative ability on face recognition. Considering the huge storage capacity,mass parallel-distributed processing ability and oscillatory phenomena of the quantum system,this model might be a biological plausible implementation.

Calculation Model for Current-voltage Relation of Silicon Quantum-dots-based Nano-memory

Based on the capacitive coupling formalism, an analytic model for calculating the drain currents of the quantum-dots floating-gate memory cell is proposed. Using this model, one can calculate numerically the drain currents of linear, saturation and subthreshold regions of the device with/without charges stored on the floating dots. The read operation process of an n-channel Si quantum-dots floating-gate nano-memory cell is discussed after calculating the drain currents versus the drain to source voltages and control gate voltages in both high and low threshold states respectively.

High-Capacity Quantum Associative Memories

We review our models of quantum associative memories that represent the “quantization” of fully coupled neural networks like the Hopfield model. The idea is to replace the classical irreversible attractor dynamics driven by an Ising model with pattern-dependent weights by the reversible rotation of an input quantum state onto an output quantum state consisting of a linear superposition with probability amplitudes peaked on the stored pattern closest to the input in Hamming distance, resulting in a high probability of measuring a memory pattern very similar to the input. The unitary operator implementing this transformation can be formulated as a sequence of one-qubit and two-qubit elementary quantum gates and is thus the exponential of an ordered quantum Ising model with sequential operations and with pattern-dependent interactions, exactly as in the classical case. Probabilistic quantum memories, that make use of postselection of the measurement result of control qubits, overcome the famed linear storage limitation of their classical counterparts because they permit to completely eliminate crosstalk and spurious memories. The number of control qubits plays the role of an inverse fictitious temperature. The accuracy of pattern retrieval can be tuned by lowering the fictitious temperature under a critical value for quantum content association while the complexity of the retrieval algorithm remains polynomial for any number of patterns polynomial in the number of qubits. These models thus solve the capacity shortage problem of classical associative memories, providing a polynomial improvement in capacity. The price to pay is the probabilistic nature of information retrieval.

Air-Stable,Eco-Friendly RRAMs Based on Lead-Free Cs_(3)Bi_(2)Br_(9)Perovskite Quantum Dots for High-Performance Information Storage

Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.

浓度依赖的掺铕硅酸钇晶体的光学和自旋非均匀展宽

可移动量子存储器是实现长距离量子通信的一种可行方案,该方案需要量子存储介质拥有小时量级的存储寿命.同位素提纯^(151)Eu^(3+):Y_(2)SiO_(5)晶体是实现这一应用的重要候选材料,但其较宽的非均匀展宽对其光存储效率和自旋存储寿命都构成了显著限制.本文自主生长了不同掺杂浓度的同位素提纯^(151)Eu^(3+):Y_(2)SiO_(5)晶体,讨论了影响非均匀展宽的机制和未来进一步控制非均匀展宽的方法,为超长寿命可移动量子存储器的实现奠定了基础.