To enhance the robustness of LDMOS ESD protection devices, the influence of a source-bulk layout structure is analyzed by theoretical analysis and numerical simulation. Novel structures with varied source-bulk layout ...To enhance the robustness of LDMOS ESD protection devices, the influence of a source-bulk layout structure is analyzed by theoretical analysis and numerical simulation. Novel structures with varied source-bulk layout structures are fabricated and compared. As demonstrated by TLP testing, the optimized structure has an 88% larger It2 than a conventional one, and its Vtl is reduced from 55.53 to 50.69 V.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60906038,61076082)
文摘To enhance the robustness of LDMOS ESD protection devices, the influence of a source-bulk layout structure is analyzed by theoretical analysis and numerical simulation. Novel structures with varied source-bulk layout structures are fabricated and compared. As demonstrated by TLP testing, the optimized structure has an 88% larger It2 than a conventional one, and its Vtl is reduced from 55.53 to 50.69 V.
