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A 45-channel 100 GHz AWG based on Si nanowire waveguides
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作者 李凯丽 张家顺 +6 位作者 安俊明 李建光 王亮亮 王玥 吴远大 尹小杰 胡雄伟 《Optoelectronics Letters》 EI 2017年第3期161-164,共4页
A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that t... A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB. 展开更多
关键词 crosstalk waveguide ultraviolet lithography spacing inductively grating etching insertion insulator
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