Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temper...Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).展开更多
The application of transparent conducting indium-tin-oxide(ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ–Ⅴ compound GaInP solar cell was proposed. A high-quality, non-rec...The application of transparent conducting indium-tin-oxide(ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ–Ⅴ compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N^+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N^+-GaAs layer, up to 2×10^(19)cm^(-3). A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible Ⅲ–Ⅴ solar cell.展开更多
基金the National Key Research and Development Program of China(2017YFE0131500)the Key Research and Development Program of Guangdong Province(2020B090922001)+2 种基金National Natural Science Foundation of China(61834008)Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1)Guangdong Basic and Applied Basic Research Foundation(2019B1515120091).
文摘Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide(ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ–Ⅴ compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N^+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N^+-GaAs layer, up to 2×10^(19)cm^(-3). A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible Ⅲ–Ⅴ solar cell.
