A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significa...A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.展开更多
文摘A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.
