A novel optical burst switching （OBS） high speed network architecture has been proposed. To verify its feasibility and evaluate its performance, just-enough-time （JET） signaling has been considered as a high perfo...A novel optical burst switching （OBS） high speed network architecture has been proposed. To verify its feasibility and evaluate its performance, just-enough-time （JET） signaling has been considered as a high performance protocol. In the proposed architecture, to avoid burst losses, firstly, a short-prior- confirmation-packet （SPCP） is sent over the control channel that simulates the events that the actual packet will experience. Once SPCP detects a drop at any of the intermediate nodes, the actual packet is not sent but the process repeats. In order to increase network utilization, cost effectiveness and to overcome some limitations of conventional OBS, inherent codes （e.g., orthogonal optical codes （OOC））, which are codified only in intensity, has been used. Through simulations, it shows that a decrease in burst loss probability, cost effectiveness and a gain in processing time are obtained when optical label processing is used as compared with electronic processing.展开更多
The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall...The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.展开更多
A new SOILIGBT（lateral insulated-gate bipolar transistor） with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In th...A new SOILIGBT（lateral insulated-gate bipolar transistor） with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the blocking state,the cathode gate is shortened to the cathode and the anode gate is shortened to the anode,leading to a fast switching speed.Moreover,the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide,which releases potential lines below the membrane,yielding an enhanced breakdown voltage（BV）.Furthermore,a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly,a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance.Compared with a conventional LIGBT,the proposed structure exhibits high current capability,low special on-resistance,and double the BV.展开更多
文摘A novel optical burst switching （OBS） high speed network architecture has been proposed. To verify its feasibility and evaluate its performance, just-enough-time （JET） signaling has been considered as a high performance protocol. In the proposed architecture, to avoid burst losses, firstly, a short-prior- confirmation-packet （SPCP） is sent over the control channel that simulates the events that the actual packet will experience. Once SPCP detects a drop at any of the intermediate nodes, the actual packet is not sent but the process repeats. In order to increase network utilization, cost effectiveness and to overcome some limitations of conventional OBS, inherent codes （e.g., orthogonal optical codes （OOC））, which are codified only in intensity, has been used. Through simulations, it shows that a decrease in burst loss probability, cost effectiveness and a gain in processing time are obtained when optical label processing is used as compared with electronic processing.
文摘The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.
基金supported by the National Natural Science Foundation of China(Nos.60806025,60976060)the Youth Teacher Foundation of University of Electronic Science and Technology of China(No.jx0721)
文摘A new SOILIGBT（lateral insulated-gate bipolar transistor） with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the blocking state,the cathode gate is shortened to the cathode and the anode gate is shortened to the anode,leading to a fast switching speed.Moreover,the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide,which releases potential lines below the membrane,yielding an enhanced breakdown voltage（BV）.Furthermore,a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly,a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance.Compared with a conventional LIGBT,the proposed structure exhibits high current capability,low special on-resistance,and double the BV.
