Polarized spin transport in mesoscopic quantum rings with electron phonon and Rashba spin-orbit coupling

The influence of electron-phonon （EP） scattering on spin polarization of current output from a mesoscopic ring with Rashba spin-orbit （SO） interaction is numerically investigated. There are three leads connecting to the ring at different positionsl unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths.

Spin-polarized transport through the T-shaped double quantum dots

Using the Keldysh nonequilibrium Green function and equation-of-motion technique, this paper investigates the spin-polarized transport properties of the T-shaped double quantum dots （DQD） coupled to two ferromagnetic leads. There are both Fano effect and Kondo effect in the system, and due to their mutual interaction, the density of states, the current, and the differential conductance of the system depend sensitively on the spin-polarized strength. Thus the obtained results show that this system is provided with excellent spin filtering property, which indicates that this system may be a candidate for spin valve transistors in the spintronics.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

A single-molecule magnet （SMM） coupled to two normal metallic electrodes can both switch spin-up and spin- down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Recent progress in perpendicularly magnetized Mn-based binary alloy films

In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxA1 thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and perma- nent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxA1 with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxA1 respec- tively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

Ultrafast magnetization enhancement and spin current injection in magnetic multilayers by exciting the nonmagnetic metal

A systematic investigation of spin injection behavior in Au/FM(FM=Fe and Ni)multilayers is performed using the superdiffusive spin transport theory.By exciting the nonmagnetic layer,the laser-induced hot electrons may transfer spin angular momentum into the adjacent ferromagnetic(FM)metals resulting in ultrafast demagnetization or enhancement.We find that these experimental phenomena sensitively depend on the particular interface reflectivity of hot electrons and may reconcile the different observations in the experiment.Stimulated by the ultrafast spin currents carried by the hot electrons,we propose the multilayer structures to generate highly spin-polarized currents for the development of future ultrafast spintronics devices.The spin polarization of the electric currents carried by the hot electrons can be significantly enhanced by the joint effects of bulk and interfacial spin filtering.Meanwhile,the intensity of the generated spin current can be optimized by varying the number of repeated stacking units and the thickness of each metallic layer.