The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valle...The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin–orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene.展开更多
Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenate...Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.展开更多
文摘The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin–orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene.
基金the National Natural Science Foundations of China(Grant No.11574118)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2019PEM006).
文摘Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.
