Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information.However,it is technically nontrivial to produce a stable valley polarization and to achieve efficient co...Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information.However,it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys.Spin–valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin–orbit coupling(SOC)and enables the manipulation of valleys indirectly through controlling spins.Here,we review the recent advances in spin–valley locking physics and outline possible device implications.In particular,we focus on the spin–valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley–spin polarization,which can be utilized to design the promising electronic devices,namely,valley-spin valves and logic gates.展开更多
Recently, spin-momentum-locked topological surface states（SSs） have attracted significant attention in spintronics.Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to ...Recently, spin-momentum-locked topological surface states（SSs） have attracted significant attention in spintronics.Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum.In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator（TI）nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures.A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.展开更多
Purpose: Recently it was demonstrated that spin-locking (SL) effects can manifest as pseudo magnetization transfer (MT). To our best knowledge the MT models proposed so far cannot distinguish between saturation effect...Purpose: Recently it was demonstrated that spin-locking (SL) effects can manifest as pseudo magnetization transfer (MT). To our best knowledge the MT models proposed so far cannot distinguish between saturation effects caused by the MT preparation pulses and SL phenomena. Therefore a new MT model is proposed. Materials and Methods: A binary spin-bath model for magnetization transfer was extended in that sense that SL effects are considered. The new modified spin bath model was tested for a phantom with different agar concentrates (2%, 4%, 8%) and a MnCl2 (0.3 mM) solution. Results: The mean fitting error is 3.2 times lower for the modified model compared to the original model. Especially the parameter F for the fractional part of the bounded proton pool describes the situation for the MnCl2 (F = 0) better than the original model (F = 0.004). Conclusion: The proposed mathematical modifications of the binary spin-bath model considering SL seem to be a step in the right direction in that sense that the effects associated with SL are not interpreted as magnetization transfer.展开更多
Spin–momentum locking is a key feature of the topological surface state, which plays an important role in spintronics.The electrical detection of current-induced spin polarization protected by the spin–momentum lock...Spin–momentum locking is a key feature of the topological surface state, which plays an important role in spintronics.The electrical detection of current-induced spin polarization protected by the spin–momentum locking in nonmagnetic systems provides a new platform for developing spintronics, while previous studies were mostly based on magnetic materials.In this study, the spin transport measurement of Dirac semimetal Cd_(3)As_(2) was studied by three-terminal geometry, and a hysteresis loop signal with high resistance and low resistance state was observed. The hysteresis was reversed by reversing the current direction, which illustrates the spin–momentum locking feature of Cd_(3)As_(2). Furthermore, we realized the on–off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration, which enables the great potential of Cd_(3)As_(2) in spin field-effect transistors.展开更多
基金supported by the Fundamental Research Funds for the Central Universities(Grant No.FRFCU5710053421)the National Natural Science Foundation of China(Grant No.12274102)。
文摘Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information.However,it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys.Spin–valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin–orbit coupling(SOC)and enables the manipulation of valleys indirectly through controlling spins.Here,we review the recent advances in spin–valley locking physics and outline possible device implications.In particular,we focus on the spin–valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley–spin polarization,which can be utilized to design the promising electronic devices,namely,valley-spin valves and logic gates.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB921103 and 2017YFA0206304)the National Natural Science Foundation of China(Grant Nos.61822403,11874203,U1732159,and U1732273)+1 种基金Fundamental Research Funds for the Central Universities,China(Grant No.021014380080)Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics,China
文摘Recently, spin-momentum-locked topological surface states（SSs） have attracted significant attention in spintronics.Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum.In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator（TI）nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures.A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.
文摘Purpose: Recently it was demonstrated that spin-locking (SL) effects can manifest as pseudo magnetization transfer (MT). To our best knowledge the MT models proposed so far cannot distinguish between saturation effects caused by the MT preparation pulses and SL phenomena. Therefore a new MT model is proposed. Materials and Methods: A binary spin-bath model for magnetization transfer was extended in that sense that SL effects are considered. The new modified spin bath model was tested for a phantom with different agar concentrates (2%, 4%, 8%) and a MnCl2 (0.3 mM) solution. Results: The mean fitting error is 3.2 times lower for the modified model compared to the original model. Especially the parameter F for the fractional part of the bounded proton pool describes the situation for the MnCl2 (F = 0) better than the original model (F = 0.004). Conclusion: The proposed mathematical modifications of the binary spin-bath model considering SL seem to be a step in the right direction in that sense that the effects associated with SL are not interpreted as magnetization transfer.
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2020YFA0309300 and 2022YFA1403700)the National Natural Science Foundation of China (Grant Nos.12004158,12074162,and 91964201)+2 种基金the Key-Area Research and Development Program of Guangdong Province (Grant No.2018B030327001)Guangdong Provincial Key Laboratory (Grant No.2019B121203002)Guangdong Basic and Applied Basic Research Foundation (Grant No.2022B1515130005)。
文摘Spin–momentum locking is a key feature of the topological surface state, which plays an important role in spintronics.The electrical detection of current-induced spin polarization protected by the spin–momentum locking in nonmagnetic systems provides a new platform for developing spintronics, while previous studies were mostly based on magnetic materials.In this study, the spin transport measurement of Dirac semimetal Cd_(3)As_(2) was studied by three-terminal geometry, and a hysteresis loop signal with high resistance and low resistance state was observed. The hysteresis was reversed by reversing the current direction, which illustrates the spin–momentum locking feature of Cd_(3)As_(2). Furthermore, we realized the on–off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration, which enables the great potential of Cd_(3)As_(2) in spin field-effect transistors.
