With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1O...With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.展开更多
CH_3CCo_3(CO)_9 was synthesized from the reaction between chloralose and Co_2(CO)_. The radical anion was generated by electrochemical reduction,and electron spin resonance spectra in THF were recorded by in situ elec...CH_3CCo_3(CO)_9 was synthesized from the reaction between chloralose and Co_2(CO)_. The radical anion was generated by electrochemical reduction,and electron spin resonance spectra in THF were recorded by in situ electrolysis in the sample tube in the ESR cavity at 298 and 110K with the spectral data展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11504194 and 11274189the Project of Shandong-Provincial Higher Educational Science and Technology Program under Grant No J14LJ06the Application Foundation Research Program of Qingdao under Grant No 14-2-4-101-jch
文摘With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.
文摘CH_3CCo_3(CO)_9 was synthesized from the reaction between chloralose and Co_2(CO)_. The radical anion was generated by electrochemical reduction,and electron spin resonance spectra in THF were recorded by in situ electrolysis in the sample tube in the ESR cavity at 298 and 110K with the spectral data
