A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and consideri...A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and considering the different charge-spin relationship of the special carriers in organic semiconductors,the current spin polarization has been obtained.Effects of the branch current ratio and the polaron proportion on the spin polarized current injection efficiency are studied.From the calculation,it is found that the improvement of the spin polarized current injection efficiency can be obtained by adjusting the branch current ratio;moreover,high polaron proportion in organic semiconductors is beneficial for obtaining high current spin polarization.展开更多
From experimental results of spin polarized injection and transport in organic semiconductors（OSCs）,we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field i...From experimental results of spin polarized injection and transport in organic semiconductors（OSCs）,we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） sandwich structure according to the spin drift-diffusion theory and Ohm＇s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.展开更多
From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in ...From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.10904083 and 10904084)the Project of Shandong Provincial Higher Educational Science and Technology Program(Grant No.J13LA05)the Excellent Young Scholars Research Fund of Shandong Normal University
文摘A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and considering the different charge-spin relationship of the special carriers in organic semiconductors,the current spin polarization has been obtained.Effects of the branch current ratio and the polaron proportion on the spin polarized current injection efficiency are studied.From the calculation,it is found that the improvement of the spin polarized current injection efficiency can be obtained by adjusting the branch current ratio;moreover,high polaron proportion in organic semiconductors is beneficial for obtaining high current spin polarization.
基金Project supported by the National Natural Science Foundation of China （Grant Nos. 10904083 and 10904084） the Shandong Provincial Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation,China （Grant No. BS2009CL008） the Science and Technology Foundation for Institution of Higher Education of Shandong Province,China （Grant No. J09LA03）
文摘From experimental results of spin polarized injection and transport in organic semiconductors（OSCs）,we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） sandwich structure according to the spin drift-diffusion theory and Ohm＇s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083 and 10904084)the Shandong Provincial Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation,China (Grant No. BS2009CL008)the Science and Technology Foundation for Institution of Higher Education of Shandong Province,China (Grant No. J09LA03)
文摘From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.
