Passive magnetic shielded spin polarized electron source with optical electron polarimeter

A new GaAs（100） spin polarized electron source with an optical polarimeter, which is employed in the field of polarized electron and gas atom collision, is presented in detail. The apparatus is passive-magnetic-shielded by a box and a cylinder made of nickel-iron-molybdenum soft magnetic alloy without Helmholtz coil arrangement. And a uniformly distributed residual magnetic field of less than 5 × 10^-7T is obtained near the collision area. The spin polarized electron beam is transmitted and focused onto collision point from photocathode by a set of electron optics with more than 25% transmission 95 cm distance through an 1 mm diameter aperture. Construction and operation of the apparatus, such as vacuum and magnetic shielding system, photocathode, laser optics, electron optics and polarimeter are discussed. The polarization of the spin polarized electron beam is determined to be 30.8 ±3.5% measured with a He optical polarimeter.

Effect of Quasi-Fermi Level on the Degree of Electron Spin Polarization in GaAs

With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.

Investigations of mechanical, electronic, and magnetic properties of non-magnetic MgTe and ferro-magnetic Mg_(0.75)T M_(0.25)Te (TM = Fe, Co, Ni): An ab-initio calculation

The mechanical, electronic and magnetic properties of non-magnetic MgTe and ferro-magnetic （FM） Mgo.75 TM025 Te （TM = Fe, Co, Ni） in the zinc-blende phase are studied by ab-initio calculations for the first time. We use the generalized gradient approximation functional for computing the structural stability, and mechanical properties, while the modified Becke and Johnson local （spin） density approximation （mBJLDA） is utilized for determining the electronic and magnetic properties. By comparing the energies of non-magnetic and FM calculations, we find that the compounds are stable in the FM phase, which is confirmed by their structural stabilities in terms of enthalpy of formation. Detailed descriptions of elastic properties of Mgo.75TMo.25Te alloys in the FM phase are also presented. For electronic properties, the spin- polarized electronic band structures and density of states are computed, showing that these compounds are direct bandgap materials with strong hybridizations of TM 3d states and Te p states. Further, the ferromagnetism is discussed in terms of the Zener free electron model, RKKY model and double exchange model. The charge density contours in the （110） plane are calculated to study bonding properties. The spin exchange splitting and crystal field splitting energies are also calculated. The distribution of electron spin density is employed in computing the magnetic moments appearing at the magnetic sites （Fe, Co, Ni）, as well as at the non-magnetic sites （Mg, Te）. It is found that the p-d hybridization causes not only magnetic moments on the magnetic sites but also induces negligibly small magnetic moments at the non-magnetic sites.