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Spin torque nano-oscillators with a perpendicular spin polarizer
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作者 Cuixiu Zheng Hao-Hsau Chen +2 位作者 Xiangli Zhang Zongzhi Zhang Yaowen Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第3期60-70,共11页
We present an overview in the understanding of spin-transfer torque(STT) induced magnetization dynamics in spintorque nano-oscillator(STNO) devices. The STNO contains an in-plane(IP) magnetized free layer and an out-o... We present an overview in the understanding of spin-transfer torque(STT) induced magnetization dynamics in spintorque nano-oscillator(STNO) devices. The STNO contains an in-plane(IP) magnetized free layer and an out-of-plane(OP) magnetized spin polarizing layer. After a brief introduction, we first use mesoscopic micromagnetic simulations,which are based on the Landau–Lifshitz–Gilbert equation including the STT effect, to specify how a spin-torque term may tune the magnetization precession orbits of the free layer, showing that the oscillator frequency is proportional to the current density and the z-component of the free layer magnetization. Next, we propose a pendulum-like model within the macrospin approximation to describe the dynamic properties in such type of STNOs. After that, we further show the procession dynamics of the STNOs excited by IP and OP dual spin-polarizers. Both the numerical simulations and analytical theory indicate that the precession frequency is linearly proportional to the spin-torque of the OP polarizer only and is irrelevant to the spin-torque of the IP polarizer. Finally, a promising approach of coordinate transformation from the laboratory frame to the rotation frame is introduced, by which the nonstationary OP magnetization precession process is therefore transformed into the stationary process in the rotation frame. Through this method, a promising digital frequency shift-key modulation technique is presented, in which the magnetization precession can be well controlled at a given orbit as well as its precession frequency can be tuned with the co-action of spin polarized current and magnetic field(or electric field) pulses. 展开更多
关键词 spin torque nano-oscillators(STNOs) spin-transfer torque effect magnetic simulation
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Zero-Magnetic-Field Oscillation of Spin Transfer Nano-Oscillator with a Second-Order-Perpendicular-Anisotropy Free Layer
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作者 郭园园 赵飞飞 +1 位作者 薛海斌 刘喆颉 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第3期107-110,共4页
The zero-magnetic-field oscillation behavior of spin torque nano-oscillator (STNO) with a perpendicularly mag- netized free layer with second-order uniaxial anisotropy is studied theoretically based on the Landau-Li... The zero-magnetic-field oscillation behavior of spin torque nano-oscillator (STNO) with a perpendicularly mag- netized free layer with second-order uniaxial anisotropy is studied theoretically based on the Landau-Lifshitz- Cilbert-Slonczewski equation. It is demonstrated numerically that the second-order uniaxial anisotropy plays a significant role in the occurrence of a zero-magnetic-field steady-state precession, which can be understood in terms of the energy balance between the energy accumulation due to the spin torque and the energy dissipation due to the Gilbert damping. In particular, a relatively large zero-magnetic-field-oscillation current region, in which the corresponding microwave frequency is increased while the threshold current still maintains an almost constant value, can be obtained by modulating the second-order uniaxial anisotropy of the free layer. These results suggest a tunable zero-magnetic-field STNO, and it may be a promising configuration for STNO's applications in future wireless communications. 展开更多
关键词 of on in is it as Zero-Magnetic-Field Oscillation of spin transfer nano-oscillator with a Second-Order-Perpendicular-Anisotropy Free Layer with
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Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect
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作者 Javad Vahedi Sahar Ghasab Satoory 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期505-511,共7页
Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, consideri... Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models:(i) single electron and(ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer. 展开更多
关键词 spin transfer torque Rashba interaction ferromagnetic
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Dynamics of magnetization in ferromagnet with spin-transfer torque
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作者 李再东 贺鹏斌 刘伍明 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期1-26,共26页
We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effec... We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out-of-plane precession, and bistable states can be realized. The precession frequency can be expressed as a function of the current and external magnetic field. 展开更多
关键词 spin-transfer torque domain wall SOLITON ferromagnetic resonance
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Recent progress on excitation and manipulation of spin-waves in spin Hall nano-oscillators
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作者 Liyuan Li Lina Chen +1 位作者 Ronghua Liu Youwei Du 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第11期117-130,共14页
Spin Hall nano oscillator(SHNO),a new type spintronic nano-device,can electrically excite and control spin waves in both nanoscale magnetic metals and insulators with low damping by the spin current due to spin Hall e... Spin Hall nano oscillator(SHNO),a new type spintronic nano-device,can electrically excite and control spin waves in both nanoscale magnetic metals and insulators with low damping by the spin current due to spin Hall effect and interfacial Rashba effect.Several spin-wave modes have been excited successfully and investigated substantially in SHNOs based on dozens of different ferromagnetic/nonmagnetic(FM/NM)bilayer systems(e.g.,FM=Py,[Co/Ni],Fe,CoFeB,Y3Fe5O12;NM=Pt,Ta,W).Here,we will review recent progress about spin-wave excitation and experimental parameters dependent dynamics in SHNOs.The nanogap SHNOs with in-plane magnetization exhibit a nonlinear self-localized bullet soliton localized at the center of the gap between the electrodes and a secondary high-frequency mode which coexists with the primary bullet mode at higher currents.While in the nanogap SHNOs with out of plane magnetization,besides both nonlinear bullet soliton and propagating spin-wave mode are achieved and controlled by varying the external magnetic field and current,the magnetic bubble skyrmion mode also can be excited at a low in-plane magnetic field.These spin-wave modes show thermal-induced mode hopping behavior at high temperature due to the coupling between the modes mediated by thermal magnon mediated scattering.Moreover,thanks to the perpendicular magnetic anisotropy induced effective field,the single coherent mode also can be achieved without applying an external magnetic field.The strong nonlinear effect of spin waves makes SHNOs easy to achieve synchronization with external microwave signals or mutual synchronization between multiple oscillators which improve the coherence and power of oscillation modes significantly.Spin waves in SHNOs with an external free magnetic layer have a wide range of applications from as a nanoscale signal source of low power consumption magnonic devices to spin-based neuromorphic computing systems in the field of artificial intelligence. 展开更多
关键词 spin–orbit torque spin Hall nano-oscillator spin-WAVES synchronization
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STT-MRAM存储器数据保持试验方法研究 被引量:1
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作者 杨霄垒 申浩 《电子与封装》 2024年第7期80-84,共5页
自旋转移力矩磁随机存储器(STT-MRAM)的基本存储单元结构为磁性隧道结(MTJ),该单元的热稳定性会随着温度的升高而变弱。MTJ这一特性导致传统激活能计算模型无法直接应用于STT-MRAM的高温数据保持特性测试,因此研究STT-MRAM的数据保持特... 自旋转移力矩磁随机存储器(STT-MRAM)的基本存储单元结构为磁性隧道结(MTJ),该单元的热稳定性会随着温度的升高而变弱。MTJ这一特性导致传统激活能计算模型无法直接应用于STT-MRAM的高温数据保持特性测试,因此研究STT-MRAM的数据保持特性需探究可替代其激活能的参数。为此,搭建了基于Xilinx Kintex-7系列FPGA的测试系统,进行了多个温度数据保持试验,最终拟合出一个代替激活能来衡量STT-MRAM数据保持能力的参数,即热稳定因子。该多温度数据拟合热稳定因子的方法可有效评估STT-MRAM器件数据保持能力。 展开更多
关键词 自旋转移力矩磁随机存储器 磁性隧道结 数据保持 存储器测试
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基于全裕度SA的高读可靠性STT-MRAM两位量化器设计
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作者 赖怡桐 唐慧琴 +1 位作者 陈平平 王少昊 《微电子学与计算机》 2024年第2期108-114,共7页
受隧道磁阻比(Tunnel Magneto Resistance,TMR)下降、工艺偏差和热波动等因素影响,先进工艺节点(亚25 nm)下的自旋转移力矩磁随机存储器(Spin Transfer Torque Magnetoresistive Random Access Memory,STT-MRAM)的读取裕度降低,读写正... 受隧道磁阻比(Tunnel Magneto Resistance,TMR)下降、工艺偏差和热波动等因素影响,先进工艺节点(亚25 nm)下的自旋转移力矩磁随机存储器(Spin Transfer Torque Magnetoresistive Random Access Memory,STT-MRAM)的读取裕度降低,读写正确率下降。纠错码(Error Correction Codes,ECC)技术方案能有效提升STT-MRAM读取可靠性。但是,常见的一位硬判决量化器无法发挥多位量化软判决ECC编解码算法的优势,而基于模数转换器的软判决量化器在实现上又要以牺牲面积和功耗为代价。提出的面向STT-MRAM的两位量化器采用全裕度灵敏放大器(Sensitive Amplifier,SA)和电阻量化判决门限,显著降低了量化器的电路复杂度和读写错误率。结果表明,在TMR和低读取裕度条件下,基于提出的两位量化器和极化码(Polar)编码的ECC算法能实现优于基于一位量化器的里德-索洛蒙博斯-乔赫里-霍克文黑姆码(Bose,Chaudhuri&Hocquenghem,BCH)编解码方案的输出帧错误率(Frame Error Rate,FER)。此外,本文提出在STT-MRAM级联信道模型中考虑实际SA引入的读判据错误,用于准确评估读取裕度对读正确率造成的影响。结果表明,基于全裕度SA的两位电阻量化方案能够显著提升判决器的有效读取裕度,减小SA引入的读判据错误,在TMR≤90%时,实现比采用一位硬判决量化器的BCH码平均低47%的输出FER。 展开更多
关键词 自旋转移力矩磁随机存储器 灵敏放大器 信道模型 信道量化器 纠错编码
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Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction 被引量:4
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作者 Xing-Tao Jia Ke Xia 《Frontiers of physics》 SCIE CSCD 2014年第6期768-773,共6页
We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT ... We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT and tunnel inagneto resistance (TMR) behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where responsible for. Thermo-STT in Fe/Vac/Fe with similar barrier thickness. the heavily restraitmd thermal conductance should be MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness. 展开更多
关键词 spin transfer torque Fe/Vacuum/Fe tunnel junction thermoelectric effect
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Symmetry ensemble theory of the spin wave emitting effect driven by current in nanoscale magnetic multilayers 被引量:1
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作者 任敏 张磊 +3 位作者 胡九宁 董浩 邓宁 陈培毅 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第5期2006-2011,共6页
This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems t... This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble. The magnetization dynamics equation of the ensemble was developed. By analytically investigating the equation, many magnetization dynamics properties excited by polarized current reported in experiments, such as double spin wave modes and the abrupt frequency jump, can be successfully explained. It is pointed out that an external field is not necessary for spin wave emitting (SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field. 展开更多
关键词 symmetry ensemble model spin wave emitting spin transfer torque nanoscale magneticmultilayer
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Spin transport in a Zigzag normal/ferromagnetic graphene junction
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作者 史豪晟 Vahram L.Grigoryan 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第5期514-518,共5页
We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spi... We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spin transfer in this model can be described by the "two-spin channel" model. We identify each spin channel as either a perfect conducting or a non-conducting channel. This feature leads to spin filter in symmetric zigzag graphene nanoribbon and spin precession in antisymmetric zigzag graphene nanoribbon, and helps to directly determine the exchange-splitting intensity directly, even without an external auxiliary bias. 展开更多
关键词 graphene junction spin filter spin transfer torque magnetic proximity effect
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Thermal spin transfer torque in Fe|Ag|YIG multilayers
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作者 Hui-Min Tang Xing-Tao Jia Shi-Zhuo Wang 《Frontiers of physics》 SCIE CSCD 2017年第3期87-92,共6页
We investigated the thermal spin transfer effect in FM|NM|YIG multilayers using the first princi- ples scattering theory. At room temperature, the spin Seebeck torque TZSE -1.0 μJ/(K-m^2) in an Ag+|Fe|Ag|YIG ... We investigated the thermal spin transfer effect in FM|NM|YIG multilayers using the first princi- ples scattering theory. At room temperature, the spin Seebeck torque TZSE -1.0 μJ/(K-m^2) in an Ag+|Fe|Ag|YIG multilayer, which is around 40% larger than that estimated from mixing conductance. The quantum effects such as interlayer exchange coupling between FM and YIG could be responsible for the enhancements. Based on the LLG equation, reverse the magnetic configurations, circularly, in a we predict that a temperature bias of -10 K can multilayer at room temperature. 展开更多
关键词 spin Seebeck torque spin transfer torque YIG
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Control of spins in a nano-sized magnet using electric-current
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作者 文宏玉 夏建白 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第4期457-461,共5页
With the development of spintronics,spin-transfer torque control of magnetic properties receives considerable attention.In this paper the Landau-Lifshitz-Gilbert equation including the torque term is used to investiga... With the development of spintronics,spin-transfer torque control of magnetic properties receives considerable attention.In this paper the Landau-Lifshitz-Gilbert equation including the torque term is used to investigate the magnetic moment dynamics in the free layer of the ferromagnet/non-magnetic/ferromagnet(FM1/N/FM2) structures.It is found that the reverse critical time τ_c decreases with the current increasing.The critical time τ_c as a function of current for the perpendicular and parallel easy magnetic axes are the same.The critical time τ_c increases with the damping factor α increasing.In the case of large current the influence of the damping factor α is smaller,but in the case of little torque the critical time τ_c increases greatly with the damping increasing.The direction of the magnetization in the fixed layer influences the critical time,when the angle between the magnetization and the z direction changes from 0.1π to 0.4π,the critical time τ_c decreases from 26.7 to 15.6. 展开更多
关键词 magnetization switching spin transfer torque Landau-Lifshitz-Gilbert (LLG) equation
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自旋轨道矩协助自旋转移矩驱动磁化强度翻转 被引量:2
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作者 王日兴 曾逸涵 +2 位作者 赵婧莉 李连 肖运昌 《物理学报》 SCIE EI CAS CSCD 北大核心 2023年第8期280-286,共7页
以磁隧道结/重金属层组成的三端口磁隧道结为理论模型,通过对包含自旋转移矩和自旋轨道矩的Landau-Lifshitz-Gilbert(LLG)方程做线性化稳定性分析,研究了自旋轨道矩协助自旋转移矩驱动的磁化强度翻转.发现在自旋轨道矩协助下,磁矩的翻... 以磁隧道结/重金属层组成的三端口磁隧道结为理论模型,通过对包含自旋转移矩和自旋轨道矩的Landau-Lifshitz-Gilbert(LLG)方程做线性化稳定性分析,研究了自旋轨道矩协助自旋转移矩驱动的磁化强度翻转.发现在自旋轨道矩协助下,磁矩的翻转时间极大减小,翻转时间随自旋轨道矩电流密度的增大而减小,且自旋转移矩和自旋轨道矩的结合可实现零磁场的磁化翻转.另外,相比自旋轨道矩的类阻尼项,类场项在磁化强度的翻转中起着主导作用,且自旋轨道矩类场项的出现也可以减小磁化强度的翻转时间,磁化强度翻转时间随自旋轨道矩类场项强度的增大而减小. 展开更多
关键词 磁化翻转 自旋转移矩 自旋轨道矩
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Multi-segmented nanowires for vortex magnetic domain wall racetrack memory
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作者 M Al Bahri M Al Hinaai T Al Harthy 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第12期582-588,共7页
A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters w... A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters were investigated in magnetic multi-segmented nanowires using micromagnetic simulation. Thus, an offset magnetic nanowire with a junction at the center was proposed for this purpose. This junction was implemented by shifting one portion of the magnetic nanowire horizontally in the x-direction(l) and vertically(d) in the y-direction. The VW structure became stable by manipulating magnetic properties, such as magnetic saturation(M_(4)) and magnetic anisotropy energy(K_(u)). In this case, increasing the values of M_(4) ≥ 800 kA/m keeps the VW structure stable during its dynamics and pinning and depinning in offset nanowires,which contributes to maintenance of the storage memory's lifetime for a longer period. It was also found that the VW moved with a speed of 500 m/s, which is desirable for VW racetrack memory devices. Moreover, it was revealed that the VW velocity could be controlled by adjusting the offset area dimensions(l and d), which helps to drive the VW by using low current densities and reducing the thermal-magnetic spin fluctuations. Further, the depinning current density of the VW(J_(d)) over the offset area increases as d increases and l decreases. In addition, magnetic properties, such as the M_(4) and K_(u),can affect the depinning process of the VW through the offset area. For high storage density, magnetic nanowires(multisegmented) with four junctions were designed. In total, six states were found with high VW stability, which means three bits per cell. Herein, we observed that the depinning current density(J_(d)) for moving the VW from one state to another was highly influenced by the offset area geometry(l and d) and the material's magnetic properties, such as the M_(4) and K_(u). 展开更多
关键词 micromagnetic simulation vortex domain wall racetrack memory multi-segmented magnetic nanowire spin transfer torque
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基于钴和坡莫合金纳磁体的全自旋逻辑器件开关特性研究 被引量:3
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作者 王森 蔡理 +3 位作者 崔焕卿 冯朝文 王峻 齐凯 《物理学报》 SCIE EI CAS CSCD 北大核心 2016年第9期348-357,共10页
基于纳磁体动力学和自旋传输机理,建立了全自旋逻辑(ASL)器件的自旋传输-磁动力学模型.基于该模型分别研究了钴纳磁体构成的全自旋逻辑(CoASL)器件和坡莫合金纳磁体构成的全自旋逻辑(PyASL)器件在不同沟道长度和电源电压下的开关特性.... 基于纳磁体动力学和自旋传输机理,建立了全自旋逻辑(ASL)器件的自旋传输-磁动力学模型.基于该模型分别研究了钴纳磁体构成的全自旋逻辑(CoASL)器件和坡莫合金纳磁体构成的全自旋逻辑(PyASL)器件在不同沟道长度和电源电压下的开关特性.结果显示PyASL器件在开关延迟时间和功耗上要小于CoASL器件,且能可靠工作的最大沟道长度要大于CoASL器件.另外,两种ASL器件的开关延迟时间可通过减小沟道长度或增加电源电压来减小;而功耗可通过减小沟道长度或电源电压来减小.同时,减小沟道长度能有效抑制热噪声对开关延迟时间和功耗的影响,但增大电源电压只能抑制热噪声对开关延迟时间的影响.上述研究结果将为优化ASL器件磁性材料和器件结构提供重要的参数选择依据. 展开更多
关键词 全自旋逻辑 自旋转矩 自旋传输 Landau-Lifshitz-Gilbert-Slonczewski方程
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垂直自由层倾斜极化层自旋阀结构中的磁矩翻转和进动 被引量:3
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作者 王日兴 叶华 +1 位作者 王丽娟 敖章洪 《物理学报》 SCIE EI CAS CSCD 北大核心 2017年第12期242-247,共6页
在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及... 在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及双稳态的磁性状态相图.发现通过调节电流密度和外磁场的大小可以实现磁矩从稳定态到进动态之间的转化以及在两个稳定态之间的翻转.翻转电流随外磁场的增加而增加,并且受自旋极化方向的影响.当自旋极化方向和自由层易磁化轴方向平行时,翻转电流最小;当自旋极化方向和自由层易磁化轴方向垂直时,翻转电流最大.通过数值求解微分方程,给出了不同磁性状态磁矩随时间的演化轨迹并验证了相图的正确性. 展开更多
关键词 磁矩翻转 自旋转移矩 稳定性分析
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新型磁性隧道结材料及其隧穿磁电阻效应 被引量:15
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作者 韩秀峰 刘厚方 +6 位作者 张佳 师大伟 刘东屏 丰家峰 魏红祥 王守国 詹文山 《中国材料进展》 CAS CSCD 2013年第6期339-353,共15页
典型的磁性隧道结是"三明治"结构,即由上下两个铁磁电极以及中间厚度为1 nm量级的绝缘势垒层构成。当外加磁场使两铁磁电极的磁矩由平行态向反平行态翻转时,隧穿电阻会发生低电阻态向高电阻态的转变。自从1995年发现室温隧穿... 典型的磁性隧道结是"三明治"结构,即由上下两个铁磁电极以及中间厚度为1 nm量级的绝缘势垒层构成。当外加磁场使两铁磁电极的磁矩由平行态向反平行态翻转时,隧穿电阻会发生低电阻态向高电阻态的转变。自从1995年发现室温隧穿磁电阻(TMR)以来,非晶势垒的AlOx磁性隧道结在磁性随机存储器(MRAM)和磁硬盘磁读头(Read Head)中得到了广泛的应用,2007年室温下其磁电阻比值可达到80%。下一代高速、低功耗、高性能的自旋电子学器件的发展,迫切需要更高的室温TMR比值和新型的调制结构。2001年通过第一性原理计算发现:由于MgO(001)势垒对不同对称性的自旋极化电子具有自旋过滤(Spin Filter)效应,单晶外延的Fe(001)/MgO(001)/Fe(001)磁性隧道结的TMR比值可超过1 000%,随后2004年在单晶或多晶的MgO磁性隧道结中获得室温约200%的TMR比值,2008年更是在赝自旋阀结构CoFeB/MgO/CoFeB磁性隧道结中获得高达604%的室温TMR比值。伴随着新势垒材料的不断发现和各种磁性隧道结结构的优化,共振隧穿和自旋依赖的库仑阻塞磁电阻等新效应以及磁性传感器、磁性随机存储器和自旋纳米振荡器及微波检测器等新器件逐渐成为科学和工业界所关注的研究与应用热点。对磁性隧道结(MTJ)材料及其器件应用研究和进展进行了简要介绍。 展开更多
关键词 巨磁电阻效应 隧穿磁电阻效应 磁性隧道结 第一性原理计算 自旋转移力矩效应 库仑阻塞磁电阻 磁随机存储器
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一种适用于自旋磁随机存储器的低压写入电路 被引量:6
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作者 张丽 庄奕琪 +1 位作者 赵巍胜 汤华莲 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2014年第3期131-137,共7页
为了降低自旋转移力矩磁随机存储器的写入功耗,提出了一种低电源电压写入电路.该电路利用列选和读写隔离相结合的方法,减小了写入支路上的电阻,写入电源电压由1.8V降低为1.2V,写入功耗降低了近33%.同时,该电路减小了读取电流对磁隧道结... 为了降低自旋转移力矩磁随机存储器的写入功耗,提出了一种低电源电压写入电路.该电路利用列选和读写隔离相结合的方法,减小了写入支路上的电阻,写入电源电压由1.8V降低为1.2V,写入功耗降低了近33%.同时,该电路减小了读取电流对磁隧道结存储信息的干扰,可有效提高自旋转移力矩磁随机存储器的存储可靠性.利用65nm的磁隧道结器件模型和商用CMOS器件模型进行了电路仿真,仿真结果表明,低电源电压写入电路能有效降低自旋转移力矩磁随机存储器写入功耗,提高其可靠性. 展开更多
关键词 自旋转移力矩磁随机存储器 磁隧道结 低功耗 高可靠性
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磁涡旋极性翻转的局域能量 被引量:1
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作者 吕刚 曹学成 +5 位作者 张红 秦羽丰 王林辉 厉桂华 高峰 孙丰伟 《物理学报》 SCIE EI CAS CSCD 北大核心 2016年第21期276-281,共6页
针对坡莫合金纳米圆盘中的单个磁涡旋结构,采用微磁学模拟研究了磁涡旋极性翻转过程中的局域能量密度.磁涡旋的极性翻转通过与初始涡旋极性相反的涡旋与反涡旋对的生成,以及随后发生的反涡旋与初始涡旋的湮没来实现.模拟结果显示当纳米... 针对坡莫合金纳米圆盘中的单个磁涡旋结构,采用微磁学模拟研究了磁涡旋极性翻转过程中的局域能量密度.磁涡旋的极性翻转通过与初始涡旋极性相反的涡旋与反涡旋对的生成,以及随后发生的反涡旋与初始涡旋的湮没来实现.模拟结果显示当纳米圆盘样品中局域能量密度的最大值达到一临界值时,磁涡旋将会实现极性翻转,其中交换能起主导作用.基于涡旋极性翻转过程中出现的三涡旋态结构,应用刚性磁涡旋模型对局域交换能量密度进行了理论分析.通过刚性磁涡旋模型得到的磁涡旋极性翻转所需的局域交换能量密度的临界值与模拟结果符合得较好. 展开更多
关键词 微磁学模拟 磁涡旋结构 自旋转移力矩效应
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自旋转矩纳米振荡器的研究进展 被引量:3
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作者 钟智勇 王棋 +3 位作者 金立川 唐晓莉 白飞明 张怀武 《真空电子技术》 2013年第2期19-24,共6页
自旋转矩纳米振荡器(STNO)是利用自旋极化电流引起多层磁性纳米结构中的自由磁性层的磁矩进动,并结合磁电阻效应而得到微波输出的一种新型微波振荡器,它具有体积小,振荡频率可电流调控,品质因素高和低功耗等优点。本文介绍了STNO的工作... 自旋转矩纳米振荡器(STNO)是利用自旋极化电流引起多层磁性纳米结构中的自由磁性层的磁矩进动,并结合磁电阻效应而得到微波输出的一种新型微波振荡器,它具有体积小,振荡频率可电流调控,品质因素高和低功耗等优点。本文介绍了STNO的工作原理,综述了STNO的国内外研究现状和发展趋势,并展望其应用前景。 展开更多
关键词 自旋转矩纳米振荡器 自旋电子学 磁电阻效应 自旋转矩效应
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